POLISHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, AND POLISHING COMPOSITION SET

    公开(公告)号:EP4317337A1

    公开(公告)日:2024-02-07

    申请号:EP22775475.1

    申请日:2022-03-18

    摘要: The present invention provides means capable of reducing surface defects on a polished substrate. The present invention relates to a method for polishing a substrate, in which the polishing method includes a polishing step, the polishing step includes two or more polishing sub-steps of polishing the substrate by rotating a platen while supplying a polishing composition to a contact surface between the substrate and a polishing pad attached to the platen, the two or more polishing sub-steps include a polishing sub-step 1 of performing polishing on the platen using a polishing composition S1, and a polishing sub-step 2 of performing, after the polishing sub-step 1, polishing on the platen used in the polishing sub-step 1 using a polishing composition S2, the polishing composition S1 contains an abrasive 1, water, and a water-soluble polymer having an abrasive adsorption parameter of 5 or more, and the polishing composition S2 contains an abrasive 2, water, and a water-soluble polymer having the abrasive adsorption parameter less than 5, but does not contain a water-soluble polymer having the abrasive adsorption parameter of 5 or more in a content of 0.005% by mass or more.

    COMPOSITION FOR SILICON WAFER POLISHING
    3.
    发明公开
    COMPOSITION FOR SILICON WAFER POLISHING 审中-公开
    POLIERZUSAMMENSETZUNGFÜRSILICIUMWAFER

    公开(公告)号:EP3007213A1

    公开(公告)日:2016-04-13

    申请号:EP14807048.5

    申请日:2014-05-02

    IPC分类号: H01L21/304 B24B37/00 C09K3/14

    摘要: This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.

    摘要翻译: 本发明提供了在磨料存在下使用的硅晶片抛光组合物。 该组合物包括硅晶片抛光促进剂,含酰胺基的聚合物和水。 含酰胺基的聚合物在其主链中具有建筑单元A. 构成单元A包含构成含酰胺基聚合物的主链的主链碳原子和仲酰胺基或叔酰胺基。 构成仲酰胺基或叔酰胺基的羰基碳原子与主链碳原子直接键合。

    POLISHING COMPOSITION
    5.
    发明公开

    公开(公告)号:EP3950875A1

    公开(公告)日:2022-02-09

    申请号:EP20776335.0

    申请日:2020-03-25

    IPC分类号: C09K3/14 B24B37/00 H01L21/304

    摘要: Provided is a polishing composition having excellent capability of reducing haze on the surface of an object to be polished. The polishing composition provided by the present invention includes an abrasive, a basic compound, a water-soluble polymer, and water. The water-soluble polymer includes at least a water-soluble polymer P1 and a water-soluble polymer P2. Here, the water-soluble polymer P1 is an acetalized polyvinyl alcohol-based polymer, and the water-soluble polymer P2 is a water-soluble polymer other than the acetalized polyvinyl alcohol-based polymer.

    POLISHING COMPOSITION AND POLISHING COMPOSITION SET

    公开(公告)号:EP3508550A1

    公开(公告)日:2019-07-10

    申请号:EP17846509.2

    申请日:2017-08-29

    IPC分类号: C09K3/14 B24B37/00 H01L21/304

    摘要: Provided is a polishing composition effective for reducing surface defects. The polishing composition provided by the present invention includes an abrasive, a water-soluble polymer, and a basic compound. The water-soluble polymer includes a polymer A that satisfies both of the following conditions.
    (1) The polymer A includes a vinyl alcohol unit and a non-vinyl alcohol unit in one molecule.
    (2) An adsorption parameter calculated by [(C1 - C2)/C1] × 100 is 5 or more. Here, C1 is the total amount of organic carbon contained in a test liquid L1 including 0.017% by weight of the polymer A and 0.009% by weight of ammonia. The C2 is the total amount of organic carbon contained in a supernatant liquid obtained by centrifugally separating a test liquid L2 including 0.46% by weight of colloidal silica having a BET diameter of 35 nm, 0.017% by weight of the polymer A, and 0.009% by weight of ammonia, and precipitating the silica particles.

    POLISHING COMPOSITION AND POLISHING METHOD
    10.
    发明公开

    公开(公告)号:EP4120323A1

    公开(公告)日:2023-01-18

    申请号:EP21768345.7

    申请日:2021-03-04

    IPC分类号: H01L21/304

    摘要: Provided is a polishing composition that contains a cellulose derivative and can improve the polishing removability and enhance the wettability of a polished surface of a silicon wafer. The polishing composition contains an abrasive, a cellulose derivative, a basic compound, and water. Here, the polishing composition has a zeta potential of -24.0 mV or more.