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    PHOTOELECTRIC CONVERSION DEVICE AND SENSOR AND ELECTRONIC DEVICE
    34.
    发明公开
    PHOTOELECTRIC CONVERSION DEVICE AND SENSOR AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：EP3819954A1

    公开(公告)日：2021-05-12

    申请号：EP20201312.4

    申请日：2020-10-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： MINAMI, Daiki ,  YUN, Sung Young ,  PARK, Kyung Bae ,  PARK, Sung Jun ,  HEO, Chul Joon

    IPC: H01L51/42

    Abstract: Disclosed are a photoelectric conversion device, and a sensor and an electronic device including the same. The photoelectric conversion device may include a first electrode and a second electrode and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes a first material and a second material, which form a pn junction, and a third material that is different from the first material and the second material. The third material is configured to modify a distribution of energy levels of the first material or the second material.

    IMAGE SENSORS AND ELECTRONIC DEVICES INCLUDING THE SAME
    36.
    发明公开
    IMAGE SENSORS AND ELECTRONIC DEVICES INCLUDING THE SAME 审中-公开

    公开(公告)号：EP3579277A2

    公开(公告)日：2019-12-11

    申请号：EP19167320.1

    申请日：2019-04-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： PARK, Kyung Bae ,  JIN, Yong Wan

    IPC: H01L27/30 ,  H01L27/146

    Abstract: An image sensor may include an organic photo-detector configured to selectively detect a near infrared wavelength spectrum of light and photoelectrically convert the detected near infrared wavelength spectrum of light, and a photo-detector array on the organic photo-detector, the photo-detector array including a photo-detector configured to detect a limited wavelength spectrum of visible light and photoelectrically convert the limited wavelength spectrum of visible light. The image sensor may discharge charges photoelectrically converted by the photo-detector to a first floating diffusion node, and the image sensor may discharge charges photoelectrically converted by the organic photo-detector to a second floating diffusion node. An area of the first floating diffusion node may be greater than an area of the second floating diffusion node.

    PHOTOELECTRIC DEVICES AND IMAGE SENSORS AND ELECTRONIC DEVICES
    37.
    发明公开
    PHOTOELECTRIC DEVICES AND IMAGE SENSORS AND ELECTRONIC DEVICES 审中-公开

    公开(公告)号：EP3493262A2

    公开(公告)日：2019-06-05

    申请号：EP18207585.3

    申请日：2018-11-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： PARK, Kyung Bae ,  RO, Takkyun ,  TSUTSUMI, Kiyohiko ,  HEO, Chul Joon ,  JIN, Yong Wan

    IPC: H01L27/30 ,  H01L51/46

    Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λ max1 ) of the first photoelectric conversion layer and a peak absorption wavelength (λ max2 ) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than a light-absorption FWHM of the first photoelectric conversion layer.

    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    39.
    发明公开
    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR 审中-公开
    有机光电子器件和图像传感器

    公开(公告)号：EP3246961A1

    公开(公告)日：2017-11-22

    申请号：EP17150423.6

    申请日：2017-01-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： RO, Takkyun ,  PARK, Kyung Bae ,  SATOH, Ryuichi ,  JIN, Yong Wan ,  HEO, Chul Joon

    IPC: H01L51/42 ,  H01L51/50 ,  H01L27/30

    CPC classification number: H01L51/447 ,  H01L27/307 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0062 ,  H01L51/0067 ,  H01L51/0072 ,  H01L51/4253 ,  H01L51/4273 ,  H01L51/442 ,  H01L51/448 ,  H01L51/5056 ,  Y02E10/549

    Abstract: An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.

    Abstract translation: 有机光电子器件可以包括第一电极和第二电极之间的光电转换层以及光电转换层上的缓冲层。 光电转换层可以在第一电极和第二电极之间，并且缓冲层可以在第一电极和光电转换层之间。 光电转换层可以包括至少第一光吸收材料和被配置为提供p-n结的第二光吸收材料。 缓冲层可以包括第一光吸收材料和与可见波长光谱相关联的非吸收材料。 非吸收性材料可具有约5.4eV至约5.8eV的HOMO能级。 非吸收材料可具有大于或等于约2.8eV的能带隙。

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