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    PHOTOELECTRIC DIODES AND ORGANIC SENSORS AND ELECTRONIC DEVICES
    5.
    发明公开
    PHOTOELECTRIC DIODES AND ORGANIC SENSORS AND ELECTRONIC DEVICES 审中-公开

    公开(公告)号：EP3696857A1

    公开(公告)日：2020-08-19

    申请号：EP19206155.4

    申请日：2019-10-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： LEE, Kwang Hee ,  RO, Takkyun ,  LEEM, Dong-Seok ,  KWON, Ohkyu ,  PARK, Bum Woo ,  CHOI, Hyesung

    IPC: H01L27/30 ,  H01L51/44 ,  C09B47/067 ,  H01L51/00

    Abstract: A photoelectric diode includes a first electrode and a second electrode facing each other; a photoelectric conversion layer between the first electrode and the second electrode, and a compensation layer on the photoelectric conversion layer, the compensation layer being configured to compensate absorption and reflection of light. The photoelectric conversion layer is associated with a first optical spectrum having a light-absorption peak at a first wavelength and a reflection peak at a second wavelength, the first wavelength and the second wavelength both within a wavelength region of about 750 nm to about 1200 nm. The photoelectric diode is associated with a second optical spectrum having a light-absorption peak at a third wavelength, the third wavelength is within the wavelength region of about 750 nm to about 1200 nm, the third wavelength different from the first wavelength.

    PHOTOELECTRIC DEVICES AND IMAGE SENSORS AND ELECTRONIC DEVICES
    7.
    发明公开
    PHOTOELECTRIC DEVICES AND IMAGE SENSORS AND ELECTRONIC DEVICES 审中-公开

    公开(公告)号：EP3493262A3

    公开(公告)日：2019-11-06

    申请号：EP18207585.3

    申请日：2018-11-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： PARK, Kyung Bae ,  RO, Takkyun ,  TSUTSUMI, Kiyohiko ,  HEO, Chul Joon ,  JIN, Yong Wan

    IPC: H01L27/30 ,  H01L51/46

    Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λ max1 ) of the first photoelectric conversion layer and a peak absorption wavelength (λ max2 ) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than a light-absorption FWHM of the first photoelectric conversion layer.

    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    8.
    发明公开
    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：EP3550607A1

    公开(公告)日：2019-10-09

    申请号：EP18195392.8

    申请日：2018-09-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： PARK, Kyungbae ,  XIANYU, Wenxu ,  KOO, Bonwon ,  RO, Takkyun ,  LEE, Changseung

    IPC: H01L27/146

    Abstract: Provided are an image sensor and a method of manufacturing the same. The image sensor may include a plurality of light detection elements arranged to correspond to a plurality of pixel regions, a color filter layer on the plurality of light detection elements and including a plurality of color filters arranged to correspond to the plurality of light detection elements, and a photodiode device portion on the color filter layer. The photodiode device portion may have curved structures. The photodiode device portion may include an organic material-based photodiode layer, a first electrode between the photodiode layer and the color filter layer, and a second electrode on the photodiode layer. The photodiode device portion may have curved convex structures respectively corresponding to the plurality of color filters.

    PHOTOELECTRIC DEVICES AND IMAGE SENSORS AND ELECTRONIC DEVICES
    9.
    发明公开
    PHOTOELECTRIC DEVICES AND IMAGE SENSORS AND ELECTRONIC DEVICES 审中-公开

    公开(公告)号：EP3493262A2

    公开(公告)日：2019-06-05

    申请号：EP18207585.3

    申请日：2018-11-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： PARK, Kyung Bae ,  RO, Takkyun ,  TSUTSUMI, Kiyohiko ,  HEO, Chul Joon ,  JIN, Yong Wan

    IPC: H01L27/30 ,  H01L51/46

    Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λ max1 ) of the first photoelectric conversion layer and a peak absorption wavelength (λ max2 ) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than a light-absorption FWHM of the first photoelectric conversion layer.

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