摘要:
In a one-electrode/bit SPS CCD memory, a capacity reduction can be obtained by phase shift of one or more clock voltages. For an n -phase system with N groups of n electrodes, the storage capacity can thus be reduced stepwise from at most N(n-1) bits to N(n-2) bits, etc. The stay time of the bits stored is reduced by a corresponding factor, as a result of which the clock frequency in the series registers need not be changed. By this reduction, the memory is more particularly suitable for storing television pictures both in the 625 lines system and in the 525 lines system.
摘要:
An apparatus for compressing and/or expanding time base using a CCD (22) adapted such that an input signal supplied to the CCD (22) is obtained as a signal with its time base compressed or expanded on the output side of the CCD (22), a first two-phase transfer clock pulse signal made up of first and second pulse train signals (Pʹø1, Pʹø2) having a first period and arranged to be 180° out of phase with each other is used for driving the CCD thereby to write the input signal to the CCD and a second two-phase transfer clock pulse signal made up of third and fourth pulse train signals (Qʹø1, Qʹø2) having a second period and arranged to be 180° out of phase with each other is used for driving the CCD thereby to read from the CCD a signal which is produced from the input signal with its time base compressed or expanded, in which the pulse width of the first pulse train signal (Pʹø1) is made virtually equal to the pulse width of the third pulse train signal (Qʹø1) and the pulse width is selected to be smaller than a half of the smaller one of the first period and the second period.
摘要:
A floating diffusion region and a drain region are formed separately from each other in a substrate. A reset electrode is arranged above an area located between the drain region and the floating diffusion region. A voltage step-up circuit having a reference voltage generator (40) receiving a power source voltage (VDD) for generating a reference voltage (VREF) and a step-up circuit (50) receiving a clock pulse (CP) for applying a voltage level of the clock pulse to the reference voltage applies a voltage (VGG) to the drain region. The gate of a conversion E type MOS transistor for converting and outputting the charge stored in the floating diffusion region to a signal having a voltage level proportional to the charge amount is connected to the floating diffusion region. The reference voltage generator (40) has D type MOS transistor (41) and E type MOS transistor (42) connected in cascade for producing the reference voltage of the value corresponding to the variation from a process center of the manufacturing process of this charge transfer device. The D type MOS transistor (41) has the same conductivity type and construction as the MOS transistor formed of the reset electrode, the floating diffusion region and the drain region. The E type MOS transistor (42) has the same conductivity type as the conversion E type MOS transistor.
摘要:
A high speed data storage array is disclosed utilizing a cell design allowing high speed sampling of a rapidly changing signal. Each cell of the array includes two input gates (Q1, Q2) between the signal input and a storage capacitor (20). The gates are controlled by a high speed row clock (12) and low speed column clock (28) the instantaneous analog value of the signal being sampled and stored by a cell on coincidence of the two clocks.
摘要:
In an integrated circuit of this type having a reset transistor (S1) for a capacitance (C1) succeeded by an active information charge transfer transistor (S2) for the capacitance (C1), a clock pulse signal (CP) at the common switching electrode (CE) results in opposite switching. It is found in practice that a noise pattern present at a reset pulse level in the circuit output signal (OT) may cause problems in the case of further signal processing operations in the device. To solve the problems a control method is used with a clock pulse signal (CP) which has at least three signal levels (a, b, c) whilst the reset transistor (S1) only is conducting consecutively, whereafter the two transistors (S1 and S2) are non-conducting and the information charge transfer transistor (S2) only is subsequently conducting. The result is that part of the problematic noise pattern is suppressed, so that further signal processing operations in the device, for example, via a known signal clamping circuit (S3, C2) and a known signal sample-and-hold circuit (S4, C3) can be performed in an acceptable manner.
摘要:
La présente invention concerne un dispositif photosensible à l'état solide pour la détection d'un rayonnement électromagnétique comportant N photosenseurs (1) connectés par l'intermédiaire d'une zone de transition (3) à un dispositif de lecture (4) du type à transfert de charge. Conformément à l'invention, le dispositif de lecture est constitué par deux registres à décalage (9, 10) à transfert de charge à N/2 entrées parallèles et à une sortie série qui reçoivent simultanément les charges détectées par les photosenseurs et les transfèrent vers un étage de lecture unique (11) sous l'action de tensions de commande choisies de manière à lire alternativement chaque registre. La présente invention s'applique à la détection dans l'infrarouge ou dans le visible.
摘要:
A circuit for obtaining an output from a CCD type signal processing circuit should operate satisfactorily in a high frequency band covering, for instance, video signals. For this purpose, the floating gate electrode (7) of the CCD is connected to a first potential level (V GG ) through first and second capacitors (C c , C o ). The connecting point of the floating gate electrode (7) in the series circuit is connected to a second potential level (V T ) through a first control switch (Q 2 ) which is driven by a reset clock pulse (OR); and the connecting point of the first and second capacitors is connected to a third potential level (V o ) through a second control switch (Q 1 ) which is driven by a reset clock pulse (OR), so that the output is provided at the connecting point of the capacitors.
摘要:
The apparatus accepts n analog input signals, on an essentially continuous basis, at respective n input terminals each of which is connected to a "second" electrode of a respective one of n capacitors (26) of a semiconductor structure (20).The respective "first" capacitor electrode is connected to a respective region of semiconductor material which has a conductivity opposite to that of a substrate of the semiconductor structure (20), which structure further comprises an n-stage charge transfer shift register (21). A clocking wave form generator (56) introduces serially n packets of fixed charge-content (due to a fixed voltage source 55) for storage in the n shift register stages. This forms an initial first sequence of charge packets. A gating circuit (74) then enables simultaneous alteration of the n stored fixed charge-content packets, each one in accordance with its respective analog input signal. This forms an initial second sequence of charge packets, which is read out serially. The first and second sequences are formed repetitively in such manner that a new first sequence is formed while the thereto previous second sequence is concurrently read out.
摘要:
L'analyse precise de grandeurs de mesure transitoires arrivant simultanement, disponibles directement ou sous forme de signaux electriques necessitait jusqu'ici un tres grand deploiement de moyens. Afin de reduire l'importance des moyens necessaires, les signaux arrivant simultanement sont memorises sous forme analogique tout en conservant leur information de temps et d'amplitude, sont retardes d'un intervalle de temps donne mais different pour chaque signal et sont ensuite transmis sur une meme ligne de sortie. Ainsi, a l'entree d'un systeme de traitement de signal qui suit, les signaux primitivement simultanes apparaissent de maniere successive, mais sont inchanges et peuvent etre traites successivement.