公开(公告)号：EP4022681B1

公开(公告)日：2024-05-22

申请号：EP20857170.3

申请日：2020-08-27

IPC: H01L27/146 ,  H01L27/144 ,  H01L29/167 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0288

CPC classification number: H01L31/1075 ,  H01L31/109 ,  H01L27/14609 ,  H01L27/14603 ,  H01L27/1461 ,  Y02P70/50

公开(公告)号：EP3780102B1

公开(公告)日：2024-05-01

申请号：EP19776725.4

申请日：2019-03-15

IPC: H01L27/146

CPC classification number: H01L21/76 ,  H01L31/10 ,  H01L27/1463 ,  H01L27/14623 ,  H01L27/14614 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/1461 ,  H01L27/14643 ,  H04N25/70

公开(公告)号：EP3410484A1

公开(公告)日：2018-12-05

申请号：EP17744239.9

申请日：2017-01-25

Applicant: Towerjazz Panasonic Semiconductor Co., Ltd.

Inventor： YOKOYAMA Toshifumi ,  NISHI Yoshiaki ,  SUZUKI Masakatsu ,  MASUDA Hiroshi

IPC: H01L27/14 ,  H04N5/3745

CPC classification number: H01L27/14645 ,  G02B1/11 ,  H01L27/14 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14636 ,  H04N5/3572 ,  H04N5/3745

Abstract: A solid state imaging device has a global shutter structure and includes: a photodetector 2; a wiring layer 6; a first transparent insulating film 10 disposed immediately above the photodetector 2 and penetrating the wiring layer 6; a transparent protective film 7 covering the wiring layer 6 and the first transparent insulating film 10, and having a higher refractive index than the first transparent insulating film 10; a first projection 8 provided on the transparent protective film 7 and having a quadrilateral shape in top view; and a second transparent insulating film 11 having a lower refractive index than the first projection 8.

公开(公告)号：EP3389092A1

公开(公告)日：2018-10-17

申请号：EP16872730.3

申请日：2016-10-27

Applicant: Sony Semiconductor Solutions Corporation

Inventor： TANAKA, Harumi ,  OSHIYAMA, Itaru ,  YOKOGAWA, Sozo

IPC: H01L27/146 ,  G02B1/118 ,  G02B5/20 ,  G02B5/26 ,  H01L27/14 ,  H01L31/10 ,  H04N5/369

CPC classification number: H04N5/341 ,  G02B1/118 ,  G02B5/20 ,  G02B5/26 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/10 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/23229 ,  H04N5/2354 ,  H04N5/33 ,  H04N5/369

Abstract: Mainly sensitivity for near infrared light is improved in a solid-state image pickup element with color mixture inhibited.
The solid-state image pickup element includes a pixel, a light-receiving-surface-sided trench, and a light-receiving-surface-sided shielding member. A plurality of protrusions is formed on the light-receiving surface of the pixel in the solid-state image pickup element. In addition, the light-receiving-surface-sided trench is formed around the pixel having the plurality of protrusions formed, at the light-receiving surface in the solid-state image pickup element. In addition, the light-receiving-surface-sided member is buried in the light-receiving-surface-sided trench formed around the pixel having the plurality of protrusions formed on the light-receiving surface in the solid-state image pickup element. In addition, the photoelectric conversion region of a near-infrared-light pixel expands to the surface side opposed to the light-receiving surface of the photoelectric conversion region of a visible-light pixel. In addition, a trench is further formed inside the pixel at a surface opposed to the light-receiving surface.

公开(公告)号：EP3352222A3

公开(公告)日：2018-10-17

申请号：EP17206231.7

申请日：2017-12-08

Applicant: CANON KABUSHIKI KAISHA

Inventor： SEKINE, Hiroshi ,  ONUKI, Yusuke ,  KAWABATA, Kazunari

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  G01C3/08 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14645 ,  H04N5/378

Abstract: In an imaging device, a photoelectric converter (201) of a first pixel (20) and a photoelectric converter (201) of a second pixel (20) are arranged along a first direction. At least part of a charge accumulation portion (202) of the first pixel is disposed between the photoelectric converter of the first pixel and the photoelectric converter of the second pixel. An exit surface (302x) of a light guiding path (302) of the first pixel is longer in a second direction orthogonal to the first direction in plan view than in the first direction.

公开(公告)号：EP3218933A4

公开(公告)日：2018-07-11

申请号：EP15858667

申请日：2015-11-13

Applicant: ARTILUX INC

Inventor： CHENG SZU-LIN ,  LIU HAN-DIN ,  CHEN SHU-LU

IPC: H01L31/105 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L27/14685 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/1469 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/036 ,  H01L31/105 ,  H01L31/18 ,  H01L31/1808 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: A light absorption apparatus includes a substrate, a light absorption layer above the substrate on a first selected area, a silicon layer above the light absorption layer, a spacer surrounding at least part of the sidewall of the light absorption layer, an isolation layer surrounding at least part of the spacer, wherein the light absorption apparatus can achieve high bandwidth and low dark current.

公开(公告)号：EP3313503A1

公开(公告)日：2018-05-02

申请号：EP16732447.4

申请日：2016-06-23

Applicant: Pixium Vision SA

Inventor： DETERRE, Martin

IPC: A61N1/05 ,  A61N1/36 ,  A61F2/14 ,  A61F9/08 ,  H01L27/146

CPC classification number: A61N1/0543 ,  A61N1/36046 ,  H01L27/1461 ,  H01L27/14629 ,  H01L27/1463

Abstract: The present invention refers to a photosensitive pixel structure (10) comprising a substrate (15) with a front surface and a back surface, wherein at least one photosensitive diode (12, 12') is provided on one of the surfaces of the substrate (15). A first material layer (30) is provided at least partially on the back surface of the substrate (15), wherein the material layer (30) comprises a reflective layer, in order to increase a reflectivity at the back surface of the substrate. Further, the present invention refers to an array (1) and an implant comprising such a photosensitive pixel structure (10), as well as to a method to produce the pixel structure (10).

公开(公告)号：EP2509108A4

公开(公告)日：2017-12-27

申请号：EP10852351

申请日：2010-06-01

Applicant: BOLY MEDIA COMMUNICATIONS (SHENZHEN) CO LTD

Inventor： HU XIAOPING

IPC: H01L27/146

CPC classification number: H01L27/14601 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14649 ,  H04N2209/047 ,  Y10T29/49002

Abstract: The present disclosure relates to a multi-spectrum photosensitive device and manufacturing method thereof. The multi-spectrum photosensitive device comprises at least one opaque base layer; each base layer having at least two sides, at least two of the sides are provided with photosensitive pixel groups, each photosensitive pixel group is used for sensing light of either spectrum irradiated from the obverse direction of the located side. Alternatively, the multi-spectrum photosensitive device comprises at least one transparent base layer; each base layer having at least two sides, at least two of the sides are provided with photosensitive pixel groups, each photosensitive pixel group is used for sensing light of interested spectrum irritated from the obverse direction or reverse direction of the located side. The present invention could be used to simultaneously sense different views of two directions or to sense a view of one direction by using the same sensing device to carry out double-direction sensing, thereby improving the performance of sensing device.

公开(公告)号：EP3104191A4

公开(公告)日：2017-10-11

申请号：EP15746421

申请日：2015-02-06

Applicant: UNIV SHIZUOKA NAT UNIV CORP

Inventor： KAWAHITO SHOJI ,  YASUTOMI KEITA ,  HAN SANGMAN

IPC: G01S7/486 ,  H01L27/144 ,  H01L27/146 ,  H04N5/374

CPC classification number: H04N5/378 ,  G01S7/4863 ,  G01S17/89 ,  H01L27/1446 ,  H01L27/1461 ,  H01L27/14623 ,  H01L27/14643 ,  H04N5/374

Abstract: Provided are a charge-modulation element easily enabling an electric field to be uniform over a long distance of a charge transport path and avoiding problems caused by interface defects, and a solid-state imaging device. The charge-modulation element includes a first charge-accumulation region (61), a second charge-accumulation region (62), a third charge-accumulation region (63), and a fourth charge-accumulation region (64), provided symmetric with respect to a center position of a light-receiving area, and a first field-control electrode pair (41a, 41b), a second field-control electrode pair (42a, 42b), a third field-control electrode pair (43a, 43b), and a fourth field-control electrode pair (44a, 44b), arranged on both sides of respective charge transport paths, for changing depletion potentials of the charge transport paths, which extend from the center position of the light-receiving area to the first charge-accumulation region (61), the second charge-accumulation region (62), the third charge-accumulation region (63), and the fourth charge-accumulation region (64).

公开(公告)号：EP2246887B1

公开(公告)日：2017-08-30

申请号：EP10008476.3

申请日：2008-11-28

Applicant: Sony Corporation

Inventor： Kudoh, Yoshiharu

IPC: H01L27/146

CPC classification number: H04N5/3745 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/374 ,  H04N5/378

Abstract: Disclosed is a solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element.