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公开(公告)号:EP4418667A1
公开(公告)日:2024-08-21
申请号:EP24171492.2
申请日:2022-08-29
发明人: CHEN, Chih Cheng , LAI, Yu Chen , CHOU, Ming-Ta , CHEN, Tzu Kan , CHEN, Tsao-Pin
IPC分类号: H04N23/54 , H04N23/55 , H01L27/146 , G02B7/02 , G02B13/00
CPC分类号: H01L27/14625 , H04N23/55 , G02B13/0045 , G02B7/021 , H01L27/14685 , H04N23/54
摘要: An imaging lens module (1) includes a sensing part (11), a lens assembly (12), a lens holding member (13), an isolating article (14) and a plastic molding article (15). The sensing part (11) includes a substrate (111), a sensing chip (112) and a plurality of conducting wires (113). The substrate (111) supports the sensing chip (112). The sensing chip (112) includes an optical effect area (1121) and an electrical connection area (1122). The conducting wires (113) are electrically connected to the electrical connection area (1122) for transmitting an image signal. The lens assembly (12) corresponds to the optical effect area (1121). The lens holding member (13) holds the lens assembly (12). The lens holding member (13) includes a wire correspondence structure (131) corresponding to the conducting wires (113). The isolating article (14) is between the wire correspondence structure (131) and the conducting wires (113). The plastic molding article (15) is molded on the sensing part (11). The plastic molding article (15) physically contacts the lens holding member (13) to fix the lens holding member 913) with respect to the sensing part (11).
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公开(公告)号:EP4407686A1
公开(公告)日:2024-07-31
申请号:EP24151861.2
申请日:2024-01-15
发明人: PARK, Hyeyeon , LEE, Yunki , KIM, Jieun , PARK, Keosung , LIM, Hajin , JEON, Taeksoo , CHOI, Hyunkyu , HUR, Jaesung
IPC分类号: H01L27/146
CPC分类号: H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L27/14636 , H01L27/14689 , H01L27/14609
摘要: Provided is an image sensor including a first substrate including a pixel area and a peripheral area adjacent to the pixel area, the pixel area including a plurality of pixels in a 2-dimensional array, a first wiring layer on a lower surface of the first substrate, an anti-reflective layer having a first refractive index, the anti-reflective layer being on an upper surface of the first substrate, and color filters on the anti-reflective layer corresponding to the pixel area and spaced apart from each other by a metal-free grid pattern.
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公开(公告)号:EP4398303A2
公开(公告)日:2024-07-10
申请号:EP24150167.5
申请日:2024-01-03
发明人: MUN, Sangeun , AHN, Sungmo , ROH, Sookyoung , LEE, Junho , CHO, Choonlae
IPC分类号: H01L27/146
CPC分类号: H01L27/14627 , H01L27/14645 , H01L27/14625 , H01L27/14685
摘要: An image sensor includes a sensor substrate including a plurality of pixels that detect light, and a nano-optical microlens array arranged on the sensor substrate and including a plurality of nano-optical microlenses that focus incident light on the plurality of pixels, wherein the nano-optical microlens array includes a plurality of lens groups, each of the plurality of lens groups includes first, second, third, and fourth nano-optical microlenses, and each of the first, second, third, and fourth nano-optical microlenses includes a plurality of nanostructures arranged to focus incident light on a corresponding pixel, and centers of the first, second, third, and fourth nano-optical microlenses in each of the plurality of peripheral groups in the plurality of lens groups are offset with respect to a center of the corresponding pixel, and offset distances of at least two of the first, second, third, and fourth nano-optical microlenses are different from each other.
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公开(公告)号:EP3352221A3
公开(公告)日:2018-11-28
申请号:EP17191049.0
申请日:2017-09-14
发明人: JIANG, Zhongsheng , LIU, Anyu
IPC分类号: H01L27/146 , G06K9/00
CPC分类号: H01L27/14678 , G02F1/13318 , G02F1/13338 , G02F1/133512 , G02F1/1368 , G02F2001/133626 , G06F3/041 , G06K9/00013 , G06K9/0004 , G09G3/3406 , G09G2354/00 , H01L27/124 , H01L27/1255 , H01L27/1262 , H01L27/127 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L27/14692 , H01L31/102 , H01L31/1105 , H01L31/1136
摘要: The present invention relates to an array substrate and a fabricating method thereof, a display panel, a display apparatus, an electronic device, a computer program and a recording medium. The array substrate comprises: a base; a thin film transistor provided in a first region on a side of the base; a photoelectric sensor, provided in a second region on the side of the base, for fingerprint identification; and a passivation layer provided on a side of both the thin film transistor and the photoelectric sensor away from the base. According to technical solutions of the present invention, by disposing a photoelectric sensor on a base of an array substrate, the photoelectric sensor can be integrated in the array substrate. In a display apparatus manufactured by using the array substrate, it is possible to place a finger at a position corresponding to a second region of the array substrate for fingerprint identification. Thus, there is no need to set an extra fingerprint identification sensor in the display apparatus, thereby simplifying the manufacturing process and improving the stability and integration of the overall structure.
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5.
公开(公告)号:EP3389092A1
公开(公告)日:2018-10-17
申请号:EP16872730.3
申请日:2016-10-27
发明人: TANAKA, Harumi , OSHIYAMA, Itaru , YOKOGAWA, Sozo
CPC分类号: H04N5/341 , G02B1/118 , G02B5/20 , G02B5/26 , H01L27/14603 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/1463 , H01L27/1464 , H01L27/14641 , H01L27/14645 , H01L27/14649 , H01L27/14685 , H01L27/14689 , H01L31/10 , H04N5/2253 , H04N5/2254 , H04N5/23229 , H04N5/2354 , H04N5/33 , H04N5/369
摘要: Mainly sensitivity for near infrared light is improved in a solid-state image pickup element with color mixture inhibited.
The solid-state image pickup element includes a pixel, a light-receiving-surface-sided trench, and a light-receiving-surface-sided shielding member. A plurality of protrusions is formed on the light-receiving surface of the pixel in the solid-state image pickup element. In addition, the light-receiving-surface-sided trench is formed around the pixel having the plurality of protrusions formed, at the light-receiving surface in the solid-state image pickup element. In addition, the light-receiving-surface-sided member is buried in the light-receiving-surface-sided trench formed around the pixel having the plurality of protrusions formed on the light-receiving surface in the solid-state image pickup element. In addition, the photoelectric conversion region of a near-infrared-light pixel expands to the surface side opposed to the light-receiving surface of the photoelectric conversion region of a visible-light pixel. In addition, a trench is further formed inside the pixel at a surface opposed to the light-receiving surface.-
公开(公告)号:EP2279524B1
公开(公告)日:2018-09-19
申请号:EP09749817.4
申请日:2009-05-19
发明人: BOLIS, Sébastien
IPC分类号: H01L27/146 , H01L31/0203 , H01L31/0232 , H04N5/225 , G02B13/00
CPC分类号: H01L27/14618 , G02B13/001 , G02B13/0085 , H01L27/14609 , H01L27/14625 , H01L27/14685 , H01L27/14696 , H01L31/0203 , H01L31/02325 , H01L2924/0002 , H04N5/2253 , H04N5/2254 , H04N5/2257 , H01L2924/00
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公开(公告)号:EP3218933A4
公开(公告)日:2018-07-11
申请号:EP15858667
申请日:2015-11-13
申请人: ARTILUX INC
发明人: CHENG SZU-LIN , LIU HAN-DIN , CHEN SHU-LU
IPC分类号: H01L31/105 , H01L31/0216 , H01L31/0224 , H01L31/028 , H01L31/18
CPC分类号: H01L27/14685 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/1469 , H01L31/02161 , H01L31/022408 , H01L31/028 , H01L31/036 , H01L31/105 , H01L31/18 , H01L31/1808 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要: A light absorption apparatus includes a substrate, a light absorption layer above the substrate on a first selected area, a silicon layer above the light absorption layer, a spacer surrounding at least part of the sidewall of the light absorption layer, an isolation layer surrounding at least part of the spacer, wherein the light absorption apparatus can achieve high bandwidth and low dark current.
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公开(公告)号:EP3329514A1
公开(公告)日:2018-06-06
申请号:EP16831237.9
申请日:2016-07-26
发明人: LIU, James
IPC分类号: H01L27/146 , G01T1/24 , G01T1/29
CPC分类号: H01L27/14663 , G01T1/2018 , G01T1/24 , G01T1/247 , H01L27/14609 , H01L27/14612 , H01L27/14625 , H01L27/14629 , H01L27/14685 , H01L27/14689 , H01L27/14692
摘要: The present approach relates to the fabrication of radiation detectors. In certain embodiments, additive manufacture techniques, such as 3D metallic printing techniques are employed to fabricate one or more parts of a detector. In an example of one such printing embodiment, amorphous silicon may be initially disposed onto a substrate and a laser may be employed to melt some or all of the amorphous silicon so as to form crystalline silicon circuitry of a light imager panel. Such printing techniques may also be employed to fabricate other aspects of a radiation detector, such as a scintillator layer.
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公开(公告)号:EP3301711A3
公开(公告)日:2018-06-06
申请号:EP17192405.3
申请日:2017-09-21
申请人: Semiconductor Manufacturing International Corporation (Beijing) , Semiconductor Manufacturing International Corporation (Shanghai)
发明人: KONG, Yunlong
IPC分类号: H01L23/485 , H01L27/146 , H01L23/31 , H01L23/528
CPC分类号: H01L24/05 , H01L23/3171 , H01L24/03 , H01L27/14621 , H01L27/14623 , H01L27/14634 , H01L27/14636 , H01L27/14643 , H01L27/14645 , H01L27/14685 , H01L27/1469 , H01L2224/0212 , H01L2224/034 , H01L2224/03602 , H01L2224/03616 , H01L2224/05093 , H01L2224/05098 , H01L2224/05124 , H01L2224/05147 , H01L2224/05624 , H01L2224/48227 , H01L2224/73265 , H04N5/369 , H01L2924/00014
摘要: A method for manufacturing a bond pad structure includes providing a substrate (201) structure including a substrate, a first metal layer (202) on the substrate (201), and a passivation layer (203) on the first metal layer (202), the passivation layer (203) having an opening (204) extending to the first metal layer (202); and filling the opening (204) of the passivation layer (203) with a second metal layer (205). The bond pad structure has a significantly increased thickness compared with the thickness of the exposed portion of the first metal layer in the opening, thereby ensuring wire bonding reliability and yield.
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公开(公告)号:EP3193367A4
公开(公告)日:2018-05-02
申请号:EP15839949
申请日:2015-08-04
IPC分类号: H01L27/14 , H01L27/146 , H01L27/148 , H04N5/369 , H04N5/372
CPC分类号: H01L27/14818 , H01L27/14 , H01L27/14685 , H01L27/148 , H01L27/14825 , H04N5/369 , H04N5/372
摘要: A back-illuminated solid-state imaging device SI includes a semiconductor substrate 1, a shift register 19, and a light-shielding film 57. The semiconductor substrate 1 includes a light incident surface on the back side and a light receiving portion 13 generating a charge in accordance with light incidence. The shift register 19 is disposed on the side of a light-detective surface 7 opposite to the light incident surface of the semiconductor substrate 1. The light-shielding film 57 is disposed on the side of the light-detective surface 7 of the semiconductor substrate 1. The light-shielding film 57 includes an uneven surface 57a opposing the light-detective surface 7.
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