CONTINUOUS RECTIFICATION APPARATUS FOR PRODUCING ELECTRONIC-GRADE PROPYLENE CARBONATE

    公开(公告)号:EP4349441A1

    公开(公告)日:2024-04-10

    申请号:EP22819501.2

    申请日:2022-06-07

    IPC分类号: B01D3/14 C07D317/36

    摘要: The present invention relates to the technical field of propylene carbonate production. Specifically disclosed is a continuous rectification apparatus for producing electronic-grade propylene carbonate, comprising a light component removal tower and a heavy component removal tower. One side of the light component removal tower is connected to a first feeding pipe. The top of the light component removal tower is connected to a first condensing box by means of a pipeline. One side of the first condensing box is connected to a first reflux tank by means of a pipeline. One side of the first reflux tank is connected to a first conveying pump by means of a pipeline. One end of the first conveying pump is connected to a first reflux pipe. The bottom of the light component removal tower is connected to a feeding pump by means of a pipeline. One end of the feeding pump is connected to a second feeding pipe. One end of the second feeding pipe is connected to one side of the heavy component removal tower. The top of the heavy component removal tower is connected to a second condensing box by means of a pipeline. One side of the second condensing box is connected to one side of a second reflux tank by means of a pipeline. An electronic-grade propylene carbonate product is obtained through the rectification and separation of a propylene carbonate product by means of the light component removal tower and the heavy component removal tower, and continuous rectification conserves energy.

    VARACTOR DEVICE WITH BACKSIDE ELECTRICAL CONTACT

    公开(公告)号:EP4297098A3

    公开(公告)日:2024-04-10

    申请号:EP23173204.1

    申请日:2023-05-12

    申请人: INTEL Corporation

    IPC分类号: H01L29/66 H01L29/93 H01L29/94

    摘要: A varactor device includes a support structure, an electrically conductive layer at the backside of the support structure, two semiconductor structures including doped semiconductor materials, two contact structures, and a semiconductor region. Each contract structure is electrically conductive and is connected to a different one of the semiconductor structures A contract structure couples the corresponding semiconductor structure to the electrically conductive layer. The semiconductor region is between the two semiconductor structures and can be connected to the two semiconductor structures. The semiconductor region may include non-planar semiconductor structures coupled with a gate. The gate may be coupled to another electrically conductive layer at the frontside of the support structure. The varactor device may further include a pair of additional semiconductor regions that are electrically insulated from each other. The additional semiconductor regions may be coupled to two oppositely polarized gates, respectively.