摘要:
The invention provides a method and apparatus for adjusting the direction of a beam of radiation 13 in which a mirror 19 is mounted on a shaft 1 so that the normal to the mirror is inclined relative to the longitudinal axis 11 of the shaft, the shaft being mounted in a bearing 2,3 for rotational adjustment relative to a supporting structure 20, 21. The invention may, for example be applied to monochromators or interferometers in which radiation beams must be adjusted in direction to very close tolerances, typically seconds of arc, and maintained in direction with a corresponding stability. In accordance with the invention the shaft is rigidly secured in the bearing after adjustment by means of an adhesive. A stress-free structure is realised in which hysteresis effects due to temperature cycling are minimised.
摘要:
A generally planar antenna formed in strip transmission line comprises a two-dimensional array of antenna elements (11) coupled to a plurality of secondary feeders (10) each coupled at at least one end to a primary feeder (4). In order that the level of coupling between the primary feeder (4) and each secondary feeder (10) should be well-defined and, when there is a large number of elements, suitably low, the coupling means therebetween are shielded and non-conductive, suitably a directional coupler (17). To provide the shielding, the primary feeder (4) and coupling means may be formed in double-ground-plane line. In an arrangement suitable for an antenna wherein power may be supplied to either end of the primary feeder (4) to give radiation patterns having single main lobes with different angular orientations, for example for a Doppler navigation system, one port of each directional coupler (17) may have an open-circuit reflective termination. For a simple design in which the proportion of power coupled into the secondary feeders (10) veries along the primary feder (4), the coupling value of the coupling means may vary stepwise from one group adjacent secondary feeders (10) to another.
摘要:
A cathode ray tube has an envelope comprising a mild steel rear housing (1) with a side wall portion (4) defining an opening over which a flat, glass, faceplate (2) is mounted. The faceplate is sealed in a vacuum tight manner using a compliant pressure bonded seal (10), comprising pressure deformable material such as lead, to the outer, flat surface of a flange (8) of the rear housing which projects inwardly of the opening from the side wall portion.
摘要:
In an RF circuit comprising an inductive element with an associated electrically-operable switch which may be subjected in use to high RF potentials, for example an inductor (LM) with a short-circuiting switch (SM) thereacross in an antenna tuning unit, the inductive element (LM) comprises a plurality of windings (W1, W2, W3) which electrically are in parallel at RF and mutually isolated at DC, and electrical power for operating the switch (SM) is supplied via the windings (W1, W2, W3) which thus provide RF isolation between the switch (SM) and the source of power. Control signals for the switch (SM) may be supplied via an opto-electronic coupler (OPTO TX/RX) or via an additional winding.
摘要:
The apparatus, eg an electron beam column (1), with high-speed deflection capibility comprises a gun (2) which directs a beam (3) of charged particles via several magnetic lenses (9,11,13a,13b) towards a target (4). Magnetic deflection coils (12a,12b) produce a variable magnetic field for controllably deflecting the beam. The beam is surrounded by an electrically conductive surface (16a,16b,22) which in the vicinity of the deflection coils is constituted by a tube (22) comprising a single, eg nichrome, wire preferably coated in a natural oxide film and formed into a close-wound helix. This tube construction has a longitudinal resistance which significantly impedes the flow of undesirable eddy currents therein. On the other hand the tube can readily conduct along a helical path so that charge accumulation on the tube walls is avoided.
摘要:
An electrothermal atomiser comprises a cuvette (1) clamped between two electrodes (2,3) to which an electrical power supply (4) is connected. A probe comprising a tubular head portion (5) and a stem portion (6) is insertable in and removable from the cuvette (1) by means of a rack (9) driven by a motor via a gear (10). By making the probe head (5) in the form of a tube a large sample volume can be accommodated and by forming the stem (6) at the top of the tube (5) spreading of acid samples along the stem during the drying phase is minimised.
摘要:
An infra-red radiation detector comprises a pyroelectric detector element (1) in an hermetically sealed housing (9, 20). The housing comprises a base (9) and a cover (20) with an aperture (10) surrounded by an inwardly directed flange (17). A self-locating window (18) capable of transmitting infra-red radiation which closes the aperture is fastened to the flange with adhesive. The window comprises a first portion (18a) which is adapted to fit and which is located within the aperture, and a second wider portion (18b) presenting a peripheral shoulder (18c) which bears against the flange. The second portion of the window is present outside the cover, giving a wide field of view. (Single Figure)
摘要:
An improvement to the reflective multistrip coupler of the surface acoustic wave device described in EPA No. 0098661 for overcoming the k-determined bandwidth limitation wherein, instead of being uniform, the electrode spacing is varied correspondingly along the input and output arrays of the coupler with the result that different frequency bands will be reflected by different groups of electrodes, and at least two reflective couplers (24, 25) with complementary spacing variations are included in the path coupling the input and output transducers (2, 3) so that all frequencies in the overall passband have substantially the same overall time delay. Contiguous bands of frequencies F,, f 2 , f 3 , f 4 , may be reflected by individual related groups 26, 27, 28, 29, of uniformly spaced electrodes forming either a monotonic or a permutated sequence, or the spacing can be varied continuously and monotonically.
摘要:
As shown in Figure 2, a synchronising signal interface circuit for a television monitor comprises two exclusive-OR gates G1 and G2 which function as controllable inverters. Line and field sync. signals applied at respective inputterminals T1 and T2 are fed to signal inputs SGN1 and SGN2 of the gates G1 and G2, and integrated versions of these signals are produced by respective integrators (Rb, Rc, C) and fed to control inputs INV1 and INV2. Each of the line and field sync. signals has a duty cycle which results in the logic level (0 or 1) of the sync. pulses of the signal being opposite to the logic level (1 or 0) of the integrated version. Due to the exclusive-OR function of the gates G1 and G2, the logic level or polarity of the output sync. signal pulses will always be the same (negative), for both negative and positive polarity of the input sync. signal pulses. A gate G3 combines the output sync. signal pulses to produce a composite sync. signal.
摘要:
Semiconductor devices comprising one or more gate-controlled unipolar hot-carrier transistors are disclosed having a semiconductor barrier region (3) located between laterally-separated first and second region portions (1,2a) of one conductivity type. The barrier region (3) has a net doping concentration of the opposite conductivity type and is sufficiently thin that the depletion layers formed at zero bias with both the first and second regions (1, 2) merge together substantially to deplete said barrier region (3) of mobile charge carriers. Current flow (12) between the first and second regions (1, 2) is at least partially by thermionic emission of charge carriers of said one conductivity type across the barrier region (3) at a major surface (11) of the body (10). The transistor has a gate (15) in the vicinity of the barrier region (3) and capacitively coupled thereto (for example via dielectric layer (18)) so as to permit the thermionic emission current (12) to be controlled by applying a voltage V GK ) to the gate (15) to adjust the effective barrier height of the barrier region (3). Such transistors can be very compact and can have a fast response time with strong gate control. The gate (15) may be located on either side of the barrier region (3), and junction-gates as well as insulated-gates are described.