公开(公告)号：EP0094129A3

公开(公告)日：1987-01-28

申请号：EP83200636

申请日：1983-05-03

申请人： PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED ,  N.V. Philips' Gloeilampenfabrieken

发明人： Shannon, John Martin

IPC分类号： H01L29/10 ,  H01L29/78

CPC分类号： H01L29/7722

摘要： Semiconductor devices comprising one or more gate-controlled unipolar hot-carrier transistors are disclosed having a semiconductor barrier region (3) located between laterally-separated first and second region portions (1,2a) of one conductivity type. The barrier region (3) has a net doping concentration of the opposite conductivity type and is sufficiently thin that the depletion layers formed at zero bias with both the first and second regions (1, 2) merge together substantially to deplete said barrier region (3) of mobile charge carriers. Current flow (12) between the first and second regions (1, 2) is at least partially by thermionic emission of charge carriers of said one conductivity type across the barrier region (3) at a major surface (11) of the body (10). The transistor has a gate (15) in the vicinity of the barrier region (3) and capacitively coupled thereto (for example via dielectric layer (18)) so as to permit the thermionic emission current (12) to be controlled by applying a voltage V GK ) to the gate (15) to adjust the effective barrier height of the barrier region (3). Such transistors can be very compact and can have a fast response time with strong gate control. The gate (15) may be located on either side of the barrier region (3), and junction-gates as well as insulated-gates are described.

公开(公告)号：EP0201945A3

公开(公告)日：1988-12-07

申请号：EP86200461

申请日：1986-03-20

申请人： PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED ,  N.V. Philips' Gloeilampenfabrieken

发明人： Shannon, John Martin

IPC分类号： H01L29/06 ,  H01L29/72 ,  H01L29/08 ,  H01L29/10 ,  H01L29/74 ,  H01L29/90

CPC分类号： H01L29/0619 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/1016 ,  H01L29/7393

摘要： A semiconductor device, e.g. a lateral DMOS transistor or bipolar transistor, has a main current path (20) extending through a high resistivity body portion (1) of one conductivity type. A minority-carrier injector region (6) which may be of the opposite conductivity type is provided in the body portion (1) in the vicinity of the current path (20) and serves with an applied forward-bias to inject minority charge carriers (16) which are characteristic of the opposite conductivity type into the body portion (1) to modulate the conductivity of the current path (20). In accordance with the invention one or more further regions (8) of the opposite conductivity type are located in the part of the body portion (1) in the vicinity of the current path (20) and within a minority-carrier diffusion length of the injector region (6) and/or of each other. These further regions (8) float at a potential dependant on the minority-carrier injection (16) from the injector region (6) and serve to inject minority charge carriers (18) into areas of the body portion (1) remote from the injector region (6) so as to modulate the conductivity of these areas of the current path (20). The floating regions (8) may be located within the spread of a depletion layer - (30) from a reverse-biased p-n junction (2) to increase the breakdown voltage of the junction (2). The body portion (1) may be, e.g., a MOST drain drift region or a bipolar transistor collector region or a thyristor base region.

公开(公告)号：EP0091710A3

公开(公告)日：1986-10-01

申请号：EP83200465

申请日：1983-03-31

申请人： PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED ,  N.V. Philips' Gloeilampenfabrieken

发明人： Shannon, John Martin

IPC分类号： H01L29/40

CPC分类号： H01L29/41 ,  H01L29/47 ,  H01L29/7606

摘要： A unipolar hot-electron or hot-hole transistor has its base region (3) or/and collector region (4,5) electrically contacted and extended to the semiconductor body surface by a metal-silicide region (23 or 25) which extends through a silicon surface region (1,2) belonging to either the transistor emitter or the emitter-base barrier. The metal-silicide region (23 or 25) forms an isolating Schottky barrier with an adjacent semiconductor portion (1,2,4 or 6). Preferably the surface region (1,2) is divided into separate first and second portions (1 and 2) by the base-contacting metal-silicide region (23), with the emitter-base barrier (13) and base- collector barrier (34) terminating at one or more sides in this metal-silicide region (23). The isolating Schottky barriers are good quality unipolar diodes so avoiding minority charge carrier storage effects in these unipolar transistors, while the metal-silicide region (23 or 25) can form good ohmic contacts to highly-conductive base and collector regions (3 and 5) which typically comprise a highly-doped semiconductor layer or a metal-silicide layer.

摘要翻译： 单极性热电子或热空穴晶体管的基极区域（3）或/和集电极区域（4,5）通过金属硅化物区域（23或25）电接触并延伸到半导体主体表面，所述金属硅化物区域延伸穿过 属于晶体管发射极或发射极 - 基极屏障的硅表面区域（1,2）。 金属硅化物区域（23或25）与相邻的半导体部分（1,2,4或6）形成隔离肖特基势垒。 优选地，表面区域（1,2）通过基极接触金属硅化物区域（23）被分成单独的第一和第二部分（1和2），其中发射极 - 基极屏障（13）和基极 - 集电极屏障 34）终止于该金属 - 硅化物区域（23）中的一个或多个侧面。 隔离肖特基势垒是质量良好的单极二极管，因此避免了这些单极晶体管中的少数电荷载流子存储效应，而金属硅化物区域（23或25）可以与高导电的基极区域和集电极区域（3和5）形成良好的欧姆接触。 其通常包括高度掺杂的半导体层或金属硅化物层。