摘要:
In the electron microscope, a degree of sample contamination caused by irradiating electron beams to a sample (4) can be suppressed to an allowable range. The electron microscope is comprised of: means (5) for directly measuring an electron beam irradiation current to a sample; time measuring means (T) for measuring irradiation time of electron beams to an observation region on the sample; and means (CPU) for calculating a dose of the electron beams irradiated to the observation region based upon the measured electron beam irradiation current, the measured electron beam irradiation time, and preset observation magnification.
摘要:
Provided between an optical axis of a primary electron beam 4 directed to a specimen 7 and a secondary electron detector 50 for detecting secondary electrons 9 emitted from the specimen 7 is a shielding electrode 12 which has a transparency for the secondary electrons 9 and has a shielding effect for an attracting electric field 54 produced by the secondary electron detector 50. An opposed electrode 11 is provided at a position facing the shielding electrode 12 to put the optical path of the electron beam 4 therebetween. Applied across the shielding electrode 12 and the opposed electrode 11 is a voltage which produces a deflecting electric field E in the electron beam path. The deflecting electric field E deflects the secondary electrons 9 to the shielding electrode 12 side to pass the secondary electrons therethrough before they are captured by the secondary electron detector 50. Optical axis correction coils 19 and 20 are provided for generating a magnetic field B to correct an orbit of the primary electron beam bent by the deflecting electric field E.
摘要:
An electron beam apparatus comprises an electron beam source, a unit for irradiating an electron beam (6) on a specimen (12), a detector (30) for secondary electrons, an electrode (7) for generating an electric field sufficient to draw out secondary electrons in a recess in the specimen from the recess, and a unit (2) for generating a magnetic field for focusing secondary electrons drawn out of the recess. With this construction, the secondary electrons drawn out of the recess by the electric field reach the detector without being attracted by the electrode. By adopting this construction, a contact hole of high aspect ratio formed in a semiconductor device and having a small diameter and a large depth can be observed.
摘要:
Improvements in a charged particle beam apparatus are contemplated and especially a column structure incorporating a superhigh vacuum evacuation system (100) is provided which is reduced in size and weight and has high performance. In order to evacuate surrounding space of a charged particle source (1) to superhigh vacuum, ion pumps (200, 202) are built in a vacuum enclosure of a column (13). Each ion pump includes a magnet unit 15, a yoke (14) and an electrode (16), and the magnet unit (15) per se is built in the vacuum enclosure. A charged particle beam focusing optics (100) for focusing and deflecting a charged particle beam (2) from the charged particle beam source (1) is arranged in a space which is defined interiorly of the yoke (14). The column structure can be reduced in size and weight and a charged particle beam apparatus having high performance can be obtained.
摘要:
The charged-particle beam apparatus according to this invention is of the type in which a specimen is inserted between the upper and lower magnetic poles of an objective lens (1), and is constructed such that stages (9a, 9b, 11, 12), which are used to move a specimen in a desired direction, are mounted one on top another from the bottom wall of the objective lens (1), thus preventing the specimen from being affected by external vibration. Devices (9c, 30, 31, 32, 33, 100), which do not generate a magnetic field, are used to drive the stages. This enables the drive devices to be directly connected to the stages, so that the stages are moved accurately.
摘要:
An analysis system in which air in a specimen exchange chamber is evacuated by an oil-sealed rotary vacuum pump and which employs electron incorporates a purge gas supply means at the inlet side of the oil-sealed rotary vacuum pump. The purge gas supply means supplies a small quantity of purge gas when the air in the specimen exchange chamber is evacuated to the almost ultimate pressure of the pump.
摘要:
A scanning electron microscope for observing and measuring a minute pattern of a sample (2) comprising an electron lens (1) for focusing an electron beam (4) from an electron source onto the sample (2), wherein the electron beam (4) scans on the sample (2), an inclining means for inclining the sample (2) at an arbitrary angle α, and two secondary electron detectors (3a, 3b) disposed at positions which are respectively turned at the same angle ϑ around the central axis of the electron beam (4) from a plane which contains the axis of inclination of the sample (2) and the central axis of the electron beam (4). As it is possible to measure the length of the minute pattern by detecting the secondary electron signal (5a, 5b) having a symmetrical wave-form while observing the minute pattern at the arbitrary angle, high measuring accuracy is attained.
摘要:
An analysis system in which air in a specimen exchange chamber is evacuated by an oil-sealed rotary vacuum pump and which employs electron incorporates a purge gas supply means at the inlet side of the oil-sealed rotary vacuum pump. The purge gas supply means supplies a small quantity of purge gas when the air in the specimen exchange chamber is evacuated to the almost ultimate pressure of the pump.