公开(公告)号：EP2132791B1

公开(公告)日：2016-07-20

申请号：EP08708081.8

申请日：2008-01-22

申请人： OSRAM Opto Semiconductors GmbH

发明人： HERRMANN, Siegfried

IPC分类号： H01L33/22 ,  H01L33/00 ,  H01L33/20

CPC分类号： H01L33/22 ,  B29C43/021 ,  B29C43/203 ,  B29L2011/0016 ,  H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2499668A1

公开(公告)日：2012-09-19

申请号：EP10776685.9

申请日：2010-11-11

申请人： OSRAM Opto Semiconductors GmbH

发明人： SCHEUBECK, Manfred ,  HERRMANN, Siegfried

IPC分类号： H01L25/16 ,  H01L33/00

CPC分类号： H01L25/167 ,  H01L33/0079 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin-film semiconductor device (1) is provided, having a support (5) and a semiconductor body (2) with a series of semiconductor layers, which comprise an active region (20) intended for generating radiation. External electrical contact can be established on the semiconductor body (2) by means of a first contact (31) and a second contact (32). The support (5) has a protection diode structure (7), which is electrically connected in parallel with the semiconductor body (2). The protection diode structure (7) has a first diode (71) and a second diode (72). The first diode (71) and the second diode (72) are electrically connected in series opposite to each other with respect to their forward direction. Furthermore, a method for producing a thin-film semiconductor device is provided.

摘要翻译： 一种薄膜半导体部件包括一个载体和半导体主体上设置用于产生辐射有源区的半导体层序列包含。 半导体本体是由第一接触和第二接触在外部电接触。 该载体包括并联电连接到所述半导体本体的保护二极管的结构。 保护二极管结构包括第一二极管和第二二极管。 所述第一二极管和所述第二二极管电连接在彼此相对的方向一系列关于它们的向前的方向。

公开(公告)号：EP2347455A2

公开(公告)日：2011-07-27

申请号：EP09771686.4

申请日：2009-11-05

申请人： OSRAM Opto Semiconductors GmbH

发明人： HERRMANN, Siegfried ,  TAEGER, Sebastian

IPC分类号： H01L33/56

CPC分类号： H01L33/44 ,  C08G61/02 ,  H01L24/24 ,  H01L24/82 ,  H01L33/62 ,  H01L2224/24051 ,  H01L2924/01327 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00

摘要： The invention relates to a radiation-emitting component, comprising a carrier, a semiconductor chip arranged on said carrier, the semiconductor chip having an active layer for generating electromagnetic radiation and a radiation exit surface, a first and a second contact structure for electrically contacting the semiconductor chip, a first and a second contact layer, the semiconductor chip being electrically connected to the first contact structure via the first contact layer and to the second contact structure via the second contact layer, and a passivation layer arranged on the semiconductor chip. Said passivation layer comprises an organic polymer of the general formula (I) wherein the groups R
1 to R
16 independently represent H, CH
3 , F, Cl or Br, and n has a value of from 10 to 500.000.

公开(公告)号：EP2332186A1

公开(公告)日：2011-06-15

申请号：EP09744315.4

申请日：2009-08-26

申请人： OSRAM Opto Semiconductors GmbH

发明人： BOGNER, Georg ,  HAHN, Berthold ,  HERRMANN, Siegfried

IPC分类号： H01L33/48 ,  H01L33/62

CPC分类号： H01L33/486 ,  H01L25/0753 ,  H01L25/0756 ,  H01L33/62 ,  H01L2924/0002 ,  H05K3/3442 ,  H01L2924/00

摘要： At least one layer stack (1) of a substrate-less LED is arranged on a top of a substrate (4).  Contact surfaces are located on a side surface (14) of the substrate (4) which adjoins the top. Connections of the LED are connected to the contact surface by connecting lines (10, 20). The contact surfaces can in particular by formed by conductor layers (6) in solder fillets (5) on vertical edges of the substrate (4). For production, through-platings can be formed in a wafer provided with LEDs at the top, which after separating the wafer form metalized solder fillets on lateral edges of the substrate (4).

公开(公告)号：EP2286470A1

公开(公告)日：2011-02-23

申请号：EP09765426.3

申请日：2009-05-08

申请人： OSRAM Opto Semiconductors GmbH

发明人： SABATHIL, Matthias ,  HERRMANN, Siegfried ,  BARCHMANN, Bernd

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L24/24 ,  H01L24/82 ,  H01L33/385 ,  H01L33/40 ,  H01L33/486 ,  H01L33/58 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/00

摘要： A radiation-emitting component is provided, which has a carrier (1) and at least one semiconductor chip (2) disposed thereon. The semiconductor chip (2) has an active layer for producing electromagnetic radiation and a first contact layer (21). In order to electrically contact the at least one semiconductor chip (2), the carrier (1) has at least one first and a second contact structure (4a, 4b). The semiconductor chip (2) is connected by the first contact layer (21) to the first contact structure (4a) in an electrically conductive manner. A passivation layer (5) is provided at least in some regions on at least one lateral surface of the semiconductor chip (2). A second contact layer (6), which leads from the surface of the semiconductor chip (2) facing away from the carrier (1) via the passivation layer (5) to the second contact structure (4b), is provided on at least one partial region of the passivation layer (5). The semiconductor chip (2) has no epitaxial growth substrate (10). Furthermore, a method for producing such a component is provided.

公开(公告)号：EP2047525A2

公开(公告)日：2009-04-15

申请号：EP07785643.3

申请日：2007-07-16

申请人： OSRAM Opto Semiconductors GmbH

发明人： HERRMANN, Siegfried ,  HAHN, Berthold

IPC分类号： H01L33/00 ,  H01L27/15

CPC分类号： H01L33/0079 ,  H01L27/15 ,  H01L33/385 ,  H01L33/54 ,  H01L33/62 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2924/00014

摘要： The invention describes a thin-film semiconductor component having a carrier layer and a layer stack which is arranged on the carrier layer, includes a semiconductor material and is intended to emit radiation, wherein a heat-dissipating layer which is intended to cool the semiconductor component is applied to the carrier layer. The invention also describes a component assembly.

公开(公告)号：EP1911104A1

公开(公告)日：2008-04-16

申请号：EP06775806.0

申请日：2006-08-04

申请人： OSRAM Opto Semiconductors GmbH

发明人： HERRMANN, Siegfried ,  HAHN, Berthold

IPC分类号： H01L33/00

CPC分类号： H01L21/6835 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/54 ,  H01L33/62 ,  H01L2221/68363 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/181 ,  H01L2933/0033 ,  Y02P20/582 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： The invention relates to a method for producing semiconductor components, wherein a layer composite (6) containing a semiconductor material is formed on a growth substrate (1), a flexible carrier layer is applied to the layer composite (6), the flexible carrier layer is cured to form a self-supporting carrier layer (2), and the growth substrate (1) is stripped away. As an alternative, the carrier layer (2) may have a base layer (2b) and an adhesion layer (2a) adhering on the layer composite.