-
41.发明公开A semiconductor laser device and a method for the production of the same 失效Halbleiterlaser und Verfahren zur Herstellung desselben。
公开(公告)号：EP0388149A2
公开(公告)日：1990-09-19
申请号：EP90302666.4
申请日：1990-03-13
发明人： Kawanishi, Hidenori , Hayashi, Hiroshi , Morimoto, Taiji , Kaneiwa, Shinji , Miyauchi, Nobuyuki , Yano, Seiki
CPC分类号： H01S5/0281 , H01S5/0201 , H01S5/164 , H01S5/166
摘要： A semiconductor laser device is disclosed which emits laser light from an end facet. The semiconductor laser device comprises a multi-layered structure (12) formed on a semiconductor substrate (11), the multi-layered structure (12) having an active layer (16) for laser oscillation, and a pair of cleavage planes (101) on the side of the multi-layered structure (12), wherein a graded-band-gap layer (18) is formed on at least one of the cleavage planes (101), the graded-band-gap layer (18) having a forbidden band gap which increases gradually with an increase in the distance from the cleavage plane (101) and the surface of the graded-band-gap layer (18) constituting the end facet.
摘要翻译： 公开了一种从端面发射激光的半导体激光器件。 半导体激光器件包括形成在半导体衬底（11）上的多层结构（12），具有用于激光振荡的有源层（16）的多层结构（12）和一对解理面（101） 在所述多层结构（12）的一侧上，其中在所述解理面（101）中的至少一个上形成渐变带隙层（18），所述渐变带隙层（18）具有 禁带宽度随着与解理面（101）和构成端面的渐变带隙层（18）的表面的距离的增加而逐渐增加。
-
42.发明公开
公开(公告)号：EP0381521A2
公开(公告)日：1990-08-08
申请号：EP90301124.5
申请日：1990-02-02
发明人： Kawanishi, Hidenori , Morimoto, Taiji , Kaneiwa, Shinji , Hayashi, Hiroshi , Miyauchi, Nobuyuki , Yano, Seiki , Matsumoto, Mitsuhiro , Sasaki, Kazuaki , Kondo, Masaki , Shiomoto, Takehiro , Yamamoto, Saburo
IPC分类号： H01S3/025
CPC分类号： H01S5/0281 , H01S5/0201 , H01S5/028 , H01S5/0282 , H01S5/0283
摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure (12) formed on a semiconductor substrate (11), the multi-layered structure (12) having an AlGaAs active layer (16) for laser oscillation, and a protective film (17) formed on the facet, wherein a film containing sulfur (18) is provided between the facet and the protective film (17).
摘要翻译： 公开了一种从小面发射激光的半导体激光装置。 该半导体激光装置包括形成在半导体衬底（11）上的多层结构（12），该多层结构（12）具有用于激光振荡的AlGaAs活性层（16）和形成的保护膜（17） 在小面上，其中在小面和保护膜（17）之间提供含有硫（18）的膜。
-
公开(公告)号：EP0162660B1
公开(公告)日：1989-07-26
申请号：EP85303412.2
申请日：1985-05-15
CPC分类号： H01S5/24 , H01S5/028 , H01S5/0622 , H01S5/10 , H01S5/1021 , H01S5/1032 , H01S5/4056
-
44.发明公开An external cavity type semiconductor laser apparatus 失效Halbleiterlaservorrichtung mit externem Resonator。
公开(公告)号：EP0280581A2
公开(公告)日：1988-08-31
申请号：EP88301731.1
申请日：1988-02-29
摘要： An external cavity type semiconductor laser apparatus comprises a semiconductor laser device (1) and an external cavity (2), which are mounted on a single mounting base (3) with a space therebetween, wherein laser light emitted from the light-emitting rear facet (6) of the laser device is reflected by the external cavity (2) and returns to the laser device (1), the reflectivity of the light-emitting rear facet (6) of the laser device (1) being different from that of the light-emitting front facet (5) of the laser device (1).
摘要翻译： 外腔型半导体激光装置包括半导体激光装置（1）和外部空腔（2），其安装在单个安装基座（3）上，其间具有空间，其中从发光后面 激光装置的发光装置（6）由外部空腔（2）反射并返回到激光装置（1），激光装置（1）的发光后面（6）的反射率不同于 激光装置（1）的发光正面（5）。
-
公开(公告)号：EP0178912A3
公开(公告)日：1987-09-09
申请号：EP85307428
申请日：1985-10-15
发明人： Miyauchi, Nobuyuki , Maei, Shigeki , Yamamoto, Osamu , Morimoto, Taiji , Yamamoto, Saburo , Hayashi, Hiroshi
IPC分类号： H01S03/19
摘要： A semiconductor laser comprising a substrate (31); a current blocking layer (32) formed on said substrate (31); a striped channel (320, 321) formed in said current blocking layer (32) on said substrate (31), said striped channel being narrow (321) in the vicinity of the facets (23, 23') and being wide (320) inside of the facets (23, 23') an active layer (34) a portion of the active layer (34), corresponding to narrow portion (321) of said striped channel being a plane to form a window region (22, 22') and another portion of the active layer (34) corresponding to the wide portion (320) of said striped channel being a crescent shape to form a laser operation area (21) with a mesa-structure which is surrounded by burying layers (36) to cut off current leakage from said laser operation are (21), the width (Wb) of the mesa-portion (30) of said laser operation area (21) being not less than the width Wi, of a current injection region (310) formed within said striped channel.
-
公开(公告)号：EP0136097A3
公开(公告)日：1987-04-29
申请号：EP84305876
申请日：1984-08-29
CPC分类号： B82Y20/00 , H01S5/2232 , H01S5/2235 , H01S5/34
摘要： A method for the production of semiconductor lasers comprises: (a) forming a substrate (10) having a striped portion (20) on its face, said striped portion being formed into a mesa (11), (b) forming a current blocking layer on each of said striped portion (21) and the remaining face of said substrate (2), (c) eliminating said current blocking layer (21) only on said striped portion (20) together with the latter thereby allowing electric current to flow through the substrate and form said striped portion into a terrace (110) or a groove, as a whole, and (d) successively laminating crystal growth layers (3, 4, 5 and 6) for laser operation on the whole face of the substrate in strict conformity with said terrace or groove on the face of said substrate, thereby attaining stabilization of the transverse mode of laser oscillation.
-
公开(公告)号：EP0104712A3
公开(公告)日：1985-05-29
申请号：EP83302278
申请日：1983-04-21
CPC分类号： H01S5/2232 , H01S5/16 , H01S5/2234 , H01S5/2237 , H01S5/32308
摘要： A window V-channeled substrate inner stripe semiconductor laser includes window regions formed at both ends of a stimulated region. The stimulated region includes a crescent active layer, and each of the window regions includes a plane active layer for transferring the laser beam emitted from the stimulated region to the mirror. An optical guide layer is formed on said crescent and plane active layers in order to ensure a stable operation of the window structure semiconductor laser.
摘要翻译： 窗口V通道衬底内部条形半导体激光器包括形成在激励区域两端的窗口区域。 受激励区域包括新月形活性层，并且每个窗口区域包括用于将从受激励区域发射的激光束传送到反射镜的平面有源层。 在所述月牙形和平面有源层上形成光导层，以确保窗口结构半导体激光器的稳定工作。
-
公开(公告)号：EP0136097A2
公开(公告)日：1985-04-03
申请号：EP84305876.9
申请日：1984-08-29
CPC分类号： B82Y20/00 , H01S5/2232 , H01S5/2235 , H01S5/34
摘要： A method for the production of semiconductor lasers comprises: (a) forming a substrate (10) having a striped portion (20) on its face, said striped portion being formed into a mesa (11), (b) forming a current blocking layer on each of said striped portion (21) and the remaining face of said substrate (2), (c) eliminating said current blocking layer (21) only on said striped portion (20) together with the latter thereby allowing electric current to flow through the substrate and form said striped portion into a terrace (110) or a groove, as a whole, and (d) successively laminating crystal growth layers (3, 4, 5 and 6) for laser operation on the whole face of the substrate in strict conformity with said terrace or groove on the face of said substrate, thereby attaining stabilization of the transverse mode of laser oscillation.
-
-
-
-
-
-
-
搜索结果
48 条记录 (耗时 0.013 秒)
