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    A semiconductor laser device and a method for the production of the same
    1.
    发明公开
    A semiconductor laser device and a method for the production of the same 失效
    Halbleiterlaser und Verfahren zur Herstellung desselben。

    公开(公告)号：EP0388149A2

    公开(公告)日：1990-09-19

    申请号：EP90302666.4

    申请日：1990-03-13

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Kawanishi, Hidenori ,  Hayashi, Hiroshi ,  Morimoto, Taiji ,  Kaneiwa, Shinji ,  Miyauchi, Nobuyuki ,  Yano, Seiki

    IPC分类号： H01S3/19 ,  H01S3/025 ,  H01L33/00

    CPC分类号： H01S5/0281 ,  H01S5/0201 ,  H01S5/164 ,  H01S5/166

    摘要： A semiconductor laser device is disclosed which emits laser light from an end facet. The semiconductor laser device comprises a multi-layered structure (12) formed on a semiconductor substrate (11), the multi-layered structure (12) having an active layer (16) for laser oscillation, and a pair of cleavage planes (101) on the side of the multi-layered structure (12), wherein a graded-band-gap layer (18) is formed on at least one of the cleavage planes (101), the graded-band-gap layer (18) having a forbidden band gap which increases gradually with an increase in the distance from the cleavage plane (101) and the surface of the graded-band-gap layer (18) constituting the end facet.

    摘要翻译： 公开了一种从端面发射激光的半导体激光器件。 半导体激光器件包括形成在半导体衬底（11）上的多层结构（12），具有用于激光振荡的有源层（16）的多层结构（12）和一对解理面（101） 在所述多层结构（12）的一侧上，其中在所述解理面（101）中的至少一个上形成渐变带隙层（18），所述渐变带隙层（18）具有 禁带宽度随着与解理面（101）和构成端面的渐变带隙层（18）的表面的距离的增加而逐渐增加。

    HIGH POWER SEMICONDUCTOR LASER DIODE AND METHOD FOR MAKING SUCH A DIODE
    3.
    发明授权
    HIGH POWER SEMICONDUCTOR LASER DIODE AND METHOD FOR MAKING SUCH A DIODE 有权
    高功率半导体激光二极管及制造这种二极管的方法

    公开(公告)号：EP1518304B1

    公开(公告)日：2005-11-16

    申请号：EP03715248.5

    申请日：2003-04-14

    申请人： Bookham Technology PLC

    发明人： PAWLIK, Susanne ,  LICHTENSTEIN, Norbert ,  SCHMIDT, Berthold

    IPC分类号： H01S5/22

    CPC分类号： H01S5/22 ,  H01S5/0202 ,  H01S5/10 ,  H01S5/1064 ,  H01S5/166 ,  H01S5/2036 ,  H01S5/204

    摘要： Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular consisting of novel design of the ridge waveguide of the laser. Essentially the novel design consists in a segmented ridge wave- guide having at least two straight segments, i.e. segments with constant, but different cross sections or widths, and at least one flared segment connecting the two different straight segments. A further improvement can be achieved . by combining this approach with a laser diode design termed "unpumped end sections" and described in copending US patent application 09/852 994, entitled "High Power Semiconductor Laser Diode". Preferable for an advantageous manufacturing process is a segmented ridge waveguide design with three straight segments, at least two of them differing in cross section or width, and two flared segments connecting the differing straight segments. This latter design results in a wafer pattern of identical and identically oriented laser diode structures, thus allowing the use of standard manufacturing processes.

    摘要翻译： 半导体激光二极管，特别是高功率脊形波导激光二极管，通常用于光电子中作为用于光通信线路中光纤放大器的所谓的泵浦激光二极管。 为了提供所需的高功率输出和这种激光二极管的稳定性并避免在使用过程中的劣化，本发明涉及这种设备的改进设计，其改进特别包括激光器脊形波导的新颖设计。 基本上，新颖的设计在于具有至少两个直线段（即具有恒定但不同的横截面或宽度的段）和连接两个不同直线段的至少一个扩口段的分段脊波导。 可以实现进一步的改进。 通过将这种方法与被称为“无端部分”的激光二极管设计相结合，并且在名称为“高功率半导体激光二极管”的共同未决的美国专利申请09/852994中进行了描述。 对于有利的制造工艺来说，优选的是具有三个直段的分段脊形波导设计，其中至少两个直径段的横截面或宽度不同，以及两个连接不同直段的喇叭形段。 这后一种设计导致具有相同且相同取向的激光二极管结构的晶圆图案，从而允许使用标准制造工艺。

    HIGH POWER SEMICONDUCTOR LASER DIODE AND METHOD FOR MAKING SUCH A DIODE
    4.
    发明公开
    HIGH POWER SEMICONDUCTOR LASER DIODE AND METHOD FOR MAKING SUCH A DIODE 有权
    高功率激光二极管及方法

    公开(公告)号：EP1518304A1

    公开(公告)日：2005-03-30

    申请号：EP03715248.5

    申请日：2003-04-14

    申请人： Bookham Technology PLC

    发明人： PAWLIK, Susanne ,  LICHTENSTEIN, Norbert ,  SCHMIDT, Berthold

    IPC分类号： H01S5/10

    CPC分类号： H01S5/22 ,  H01S5/0202 ,  H01S5/10 ,  H01S5/1064 ,  H01S5/166 ,  H01S5/2036 ,  H01S5/204

    摘要： Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular consisting of novel design of the ridge waveguide of the laser. Essentially the novel design consists in a segmented ridge wave- guide having at least two straight segments, i.e. segments with constant, but different cross sections or widths, and at least one flared segment connecting the two different straight segments. A further improvement can be achieved . by combining this approach with a laser diode design termed 'unpumped end sections' and described in copending US patent application 09/852 994, entitled 'High Power Semiconductor Laser Diode'. Preferable for an advantageous manufacturing process is a segmented ridge waveguide design with three straight segments, at least two of them differing in cross section or width, and two flared segments connecting the differing straight segments. This latter design results in a wafer pattern of identical and identically oriented laser diode structures, thus allowing the use of standard manufacturing processes.

    HALBLEITERLASER
    7.
    发明公开
    HALBLEITERLASER 审中-公开

    公开(公告)号：EP3357133A1

    公开(公告)日：2018-08-08

    申请号：EP16785104.7

    申请日：2016-09-27

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： GERHARD, Sven ,  LELL, Alfred ,  VIERHEILIG, Clemens ,  LÖFFLER, Andreas ,  EICHLER, Christoph

    IPC分类号： H01S5/042 ,  H01S5/16 ,  H01S5/32 ,  H01S5/028 ,  H01S5/323

    CPC分类号： H01S5/168 ,  H01S5/0287 ,  H01S5/0421 ,  H01S5/16 ,  H01S5/162 ,  H01S5/166 ,  H01S5/3211 ,  H01S5/3214 ,  H01S5/32341 ,  H01S2301/176

    摘要： The invention relates to a semiconductor laser (1) comprising a semiconductor layer sequence (2) with an n-type n-region (21), a p-type p-region (23) and an active zone (22) lying between the two for the purpose of generating laser radiation. A p-contact layer (3) that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region (23) for the purpose of current input. An electrically-conductive metallic p-contact structure (4) is applied directly to the p-contact layer (3). The p-contact layer (3) is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer (3) during operation of the semi-conductor laser (1). Two facets (25) of the semiconductor layer sequence (2) form resonator end surfaces for the laser radiation. Current input into the p-region (23) is inhibited in at least one current protection region (5) directly on at least one of the facets (25). Said current protection region has, in the direction running perpendicularly to the associated facets (25), an extension of at least 0.5 µm and at most 100 µm, and additionally of at least 20% of a resonator length for the laser radiation.

    SEMICONDUCTOR LASER ELEMENT
    9.
    发明公开
    SEMICONDUCTOR LASER ELEMENT 有权
    半导体激光元件

    公开(公告)号：EP2224558A1

    公开(公告)日：2010-09-01

    申请号：EP08847356.6

    申请日：2008-10-31

    申请人： Nichia Corporation

    发明人： SONOBE, Shinya ,  MASUI, Shingo

    IPC分类号： H01S5/22

    CPC分类号： H01S5/168 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/0283 ,  H01S5/0425 ,  H01S5/166 ,  H01S5/2086 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/3214 ,  H01S5/34333 ,  H01S2301/176 ,  H01S2301/18 ,  H01S2304/04

    摘要： [Object] The present invention was conceived in light of the above problems, and it is an object thereof to provide a reliable and long-lasting semiconductor laser element with which heat generation near the cavity end face can be kept to a minimum even with high-output semiconductor laser elements, the COD level can be improved, and a good FFP shape can be obtained. [Means for Solving Problem] A semiconductor laser element, comprises: a laminate composed of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a second embedded layer that is in contact with the second conductivity type semiconductor layer, has a stripe-like groove parallel to the cavity direction, and is composed of an insulator, the groove is embedded with a first embedded layer composed of a dielectric on the cavity end face side, and with a conductive layer on the inside.