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211 条记录 (耗时 0.017 秒)

    LED CONTROL CIRCUITS AND METHODS
    53.
    发明公开
    LED CONTROL CIRCUITS AND METHODS 审中-公开
    LED-ANSTEUERUNGSSCHALTUNGEN UND VERFAHREN

    公开(公告)号：EP3005836A1

    公开(公告)日：2016-04-13

    申请号：EP14806844.8

    申请日：2014-06-09

    申请人： Texas Instruments Incorporated

    发明人： SULLIVAN, Timothy, R.

    IPC分类号： H05B33/08 ,  H05B37/02

    CPC分类号： H05B33/0845 ,  H05B33/0815 ,  H05B37/02

    摘要： In described examples, an LED controller (100) includes: an input (114) connectable to a power source (110); and an output (140) connectable to at least one LED (102). A power factor correction circuit (130) is coupled between the input (114) and the output (140). The power factor correction circuit (130) operates in a first state when the power factor is corrected. The power factor correction circuit (130) operates in a second state when the power factor is not corrected. The power factor correction circuit (130) is in the first state when no dimming of the LED (102) is sensed, and the power factor correction circuit (130) is in the second state when dimming of the LED (102) is sensed.

    摘要翻译： 本文公开了一种LED控制器。 控制器的实施例包括可连接到电源的第一输入和可连接到至少一个发光二极管（LED）的输出。 功率因数校正电路耦合在第一输入和输出之间，其中当功率因数被校正时，功率因数校正电路工作在第一状态，并且其中功率因数校正电路在功率因数不是时处于第二状态 纠正。 当不检测到LED的调光时，功率因数校正电路处于第一状态，并且当感测到LED的调光时，功率因数校正电路处于第二状态。

    ELECTRONIC CURRENT-LIMITING APPARATUS
    54.
    发明公开
    ELECTRONIC CURRENT-LIMITING APPARATUS 审中-公开
    电子设备限流

    公开(公告)号：EP3005012A1

    公开(公告)日：2016-04-13

    申请号：EP14804381.3

    申请日：2014-05-28

    申请人： Texas Instruments Incorporated

    发明人： TORRES, Hector ,  PARKHURST, Charles

    IPC分类号： G05F1/10 ,  G05F1/56 ,  G05F1/575

    CPC分类号： H02H9/02 ,  G05F1/5735 ,  G05F1/575 ,  H02H9/001

    摘要： Apparatus disclosed herein implement a fast transient precision current limiter such as may be included in an electronic voltage regulator. The current limiter includes two current sense element/current clamp control loops. A fast response time control loop first engages and clamps a current spike. A precision control loop then engages to more accurately clamp the output current to a programmed set point. The precision clamping loop includes an inner loop to linearize the precision current sense element. The inner loop forces the drain-to-source voltage (VDS) of the precision sense element to track the VDS of the regulator pass element. A more precise clamping operation results. Overall speed is not sacrificed as the fast response time clamping loop operates in parallel to protect circuitry while the precision clamping loop engages.

    DIFFERENTIAL SAMPLING CIRCUIT WITH HARMONIC CANCELLATION
    55.
    发明公开
    DIFFERENTIAL SAMPLING CIRCUIT WITH HARMONIC CANCELLATION 审中-公开
    不同的ABTASTSCHALTUNG MITOBERWELLENUNTERDRÜCKUNG

    公开(公告)号：EP2995004A1

    公开(公告)日：2016-03-16

    申请号：EP14794510.9

    申请日：2014-05-08

    申请人： Texas Instruments Incorporated

    发明人： FRANCIS, Roswald

    IPC分类号： H03M3/00 ,  G05F3/02

    CPC分类号： G11C27/02 ,  H03M1/1245

    摘要： A differential sampling circuit (100) includes a compensation circuit (140) for cancelling harmonic content resulting from a phase imbalance. The compensation circuit (140) includes a pair of field effect transistors (142, 143) operating in saturation mode, each field effect transistor (142, 143) coupled in parallel with the differential switch (122) of the sampling circuit (100), which operates in linear mode. The saturation region transistors (142, 143) across the differential switch (122) allow the harmonic content to flow through the compensation circuit (140) instead of the sampling capacitors (12, 13) of the sampling circuit (100).

    摘要翻译： 一种用于消除由差分采样电路中的相位不平衡引起的谐波含量的补偿电路。 补偿电路包括以饱和模式工作的一对场效应晶体管，每个场效应晶体管与采样电路的差分开关并联，其以线性模式工作。 差分开关上的饱和区域晶体管允许谐波含量流过补偿电路，而不是采样电路的采样电容器。

    4TX CODEBOOK ENHANCEMENT IN LTE
    56.
    发明公开
    4TX CODEBOOK ENHANCEMENT IN LTE 审中-公开
    4TX码本扩展LTE

    公开(公告)号：EP2992705A2

    公开(公告)日：2016-03-09

    申请号：EP14751985.4

    申请日：2014-02-12

    申请人： Texas Instruments Incorporated

    发明人： ONGGOSANUSI, Eko ,  CHEN, Runhua ,  BENDLIN, Ralf

    IPC分类号： H04W24/08

    CPC分类号： H04B7/0456 ,  H04B7/0417 ,  H04B7/046 ,  H04B7/0469 ,  H04B7/0478 ,  H04B7/0486 ,  H04B7/0626 ,  H04B7/0639

    摘要： Channel state information (CSI) feedback in a wireless communication system is disclosed. A precoding matrix is generated for multi-antenna transmission based on precoding matrix indicator (PMI) feedback, wherein the PMI indicates a choice of precoding matrix derived from a matrix multiplication of two matrices from a first codebook and a second codebook. In one embodiment, the first codebook comprises at least a first precoding matrix constructed with a first group of adjacent Discrete-Fourier-Transform (DFT) vectors. In another embodiment, the first codebook comprises at least a second precoding matrix constructed with a second group of uniformly distributed non-adjacent DFT vectors. In yet another embodiment, the first codebook comprises at least a first precoding matrix and a second precoding matrix, where said first precoding matrix is constructed with a first group of adjacent DFT vectors, and said second precoding matrix is constructed with a second group of uniformly distributed non-adjacent DFT vectors.

    DUAL RESURF TRENCH FIELD PLATE IN VERTICAL MOSFET
    57.
    发明公开
    DUAL RESURF TRENCH FIELD PLATE IN VERTICAL MOSFET 审中-公开
    双重恢复电容器

    公开(公告)号：EP2992560A1

    公开(公告)日：2016-03-09

    申请号：EP14760657.8

    申请日：2014-03-06

    申请人： Texas Instruments Incorporated

    发明人： KOCON, Christopher, B. ,  NEILSON, John, Manning, Savidge ,  MOLLOY, Simon, J. ,  KAWAHARA, Hideaki ,  YANG, Hong ,  SRIDHAR, Seetharaman ,  WU, Hao ,  WEN, Boling

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7813 ,  H01L29/0649 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7802

    摘要： A semiconductor device (100) contains a vertical MOS transistor (106) with instances of a vertical reduced surface field (RESURF) trench (112) on opposite sides of a vertical drift region (110). The vertical RESURF trench (112) contains a dielectric trench liner (114) on sidewalls, a lower field plate (120) and an upper field plate (122). The dielectric trench liner (114) between the lower field plate and the vertical drift region (110) is thicker than between the upper field plate and the vertical drift region (110). A gate (126) is disposed over the vertical drift region (110) and is separate from the upper field plate (122). The upper field plate (122) and the lower field plate (120) are electrically coupled to a source electrode of the vertical MOS transistor.

    摘要翻译： 半导体器件包含垂直MOS晶体管，其具有在垂直漂移区域的相对侧上的垂直RESURF沟槽的实例。 垂直RESURF沟槽包含侧壁上的介电沟槽衬垫，下场板上的下场板和上场板。 下场板和垂直漂移区之间的电介质沟槽衬垫比上场板和垂直漂移区之间厚。 栅极设置在垂直漂移区域上方并与上部场板分离。 上场板和下场板电耦合到垂直MOS晶体管的源电极。

    APPARATUS AND METHOD FOR IN SITU CURRENT MEASUREMENT IN A CONDUCTOR
    59.
    发明公开
    APPARATUS AND METHOD FOR IN SITU CURRENT MEASUREMENT IN A CONDUCTOR 审中-公开
    VORRICHTUNG UND VERFAHREN ZUR IN-SITU-STROMMESSUNG IN EINEM LEITER

    公开(公告)号：EP2989473A1

    公开(公告)日：2016-03-02

    申请号：EP14748613.8

    申请日：2014-02-05

    申请人： Texas Instruments Incorporated ,  Texas Instruments Deutschland GmbH

    发明人： IVANOV, Mikhail Valeryevich ,  CHENNUPATI, Siva RaghuRam Prasad ,  SCHAFFER, Viola

    IPC分类号： G01R19/00

    CPC分类号： G01R15/20 ,  G01R15/148 ,  G01R15/207 ,  G01R33/0005 ,  G01R33/02 ,  G01R33/09

    摘要： Conductor apparatus (100) includes a bus bar conductive structure (110) and a magnetometer (120). The conductive structure conducts current along a longitudinal direction (102) and has an outer periphery extending between first and second longitudinal ends (111, 112). The magnetometer includes an array of at least two magnetic sensors located on a single integrated circuit at least partially within the outer periphery of the conductive structure. The individual magnetic sensors have an associated sensing direction transverse to the longitudinal direction of the conductive structure. A sensor interface circuit coupled to the magnetic sensors generates at least one output signal or value representing longitudinal current flow in the conductive structure based at least partially on at least one signal from the magnetic sensors. Multiple wires (122) are electrically connected to the sensor interface circuit and extend outside the outer periphery of the conductive structure.

    摘要翻译： 提出了改进的电流检测方法和装置和导体装置，用于使用一个或多个环形磁性传感器或多个磁性传感器来感测汇流条或其它导体中的电流，该磁性传感器或多个磁性传感器以围绕导体的外周边内的纵向路径的图案设置在基板上 以避免或减轻感测到的磁场串扰并且便于在磁场相对较小的导体周边内的位置处使用高灵敏度的磁传感器。