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51.发明公开
公开(公告)号：EP4137615A1
公开(公告)日：2023-02-22
申请号：EP21788842.9
申请日：2021-03-30
Inventor： KANEKO, Tadaaki , DOJIMA, Daichi
Abstract: An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter semiconductor substrate.
The present invention is a method for manufacturing a semiconductor substrate including a crystal growth step S30 of forming a growth layer 20 on an underlying substrate 10 having through holes 11. In addition, the present invention is a method for forming a growth layer 20 including the through hole formation step S10 of forming through holes 11 in the underlying substrate 10 before forming the growth layer 20 on a surface of the underlying substrate 10.-
公开(公告)号：EP4137614A1
公开(公告)日：2023-02-22
申请号：EP21788087.1
申请日：2021-03-30
Applicant: Kwansei Gakuin Educational Foundation , Toyo Aluminium Kabushiki Kaisha , Toyota Tsusho Corporation
Inventor： KANEKO, Tadaaki , DOJIMA, Daichi , MURAKAWA, Taku , MATSUBARA, Moeko , NISHIO, Yoshitaka
Abstract: An object of the present invention is to provide a novel technique capable of suppressing the occurrence of cracks in an AlN layer.
The present invention is a method for manufacturing an AlN substrate, the method including: an embrittlement processing step S10 of reducing strength of a SiC underlying substrate 10; and a crystal growth step S20 of forming an AlN layer 20 on the SiC underlying substrate 10. In addition, the present invention is a method for suppressing the occurrence of cracks in the AlN layer 20, the method including the embrittlement processing step S10 of reducing the strength of the SiC underlying substrate 10 before forming the AlN layer 20 on the SiC underlying substrate 10.-
53.发明公开
公开(公告)号：EP4036285A1
公开(公告)日：2022-08-03
申请号：EP20870319.9
申请日：2020-09-24
Inventor： KANEKO, Tadaaki , KOJIMA, Kiyoshi
Abstract: The present invention attempts to solve the problem of providing novel technology that makes it possible to grow high-quality semiconductor substrates. In order to solve the abovementioned problem, the present invention provides: a method for producing semiconductor substrates that includes an installation step in which starting substrates and starting materials are installed in an alternating manner and a heating step in which the starting substrates and the starting materials are heated and a growth layer is formed on the starting substrates; and a device for producing the semiconductor substrates. Owing to this configuration, the present invention makes it possible to simultaneously achieve desired growth conditions in each of a plurality of starting substrates and thereby provide novel technology that makes it possible to grow high-quality semiconductor substrates.
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公开(公告)号：EP4036280A1
公开(公告)日：2022-08-03
申请号：EP20869992.6
申请日：2020-09-24
Inventor： KANEKO, Tadaaki , KOJIMA, Kiyoshi
IPC: C30B23/06 , H01L21/20 , H01L21/268 , C30B29/36
Abstract: An object of the present invention is to provide a high-quality SiC semiconductor device. In order to solve the above problem, the present invention comprises a method for producing a SiC semiconductor device, comprising a growth step of forming a growth layer on a workpiece comprising SiC single crystals, a device formation step of forming at least a portion of a SiC semiconductor device in the growth layer, and a separation step of separating at least a portion of the SiC semiconductor device from the workpiece.
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公开(公告)号：EP4012078A1
公开(公告)日：2022-06-15
申请号：EP20850134.6
申请日：2020-08-05
Inventor： KANEKO, Tadaaki , KOJIMA, Kiyoshi
IPC: C30B29/36 , C30B23/06 , C30B33/12 , H01L21/203
Abstract: An object of the present invention is to provide a novel technology capable of achieving high-quality SiC seed crystal, SiC ingot, SiC wafer and SiC wafer with an epitaxial film. The present invention, which solves the above object, is a method for producing a SiC seed crystal for growth of a SiC ingot, the method including a heat treatment step of heat-treating a SiC single crystal in an atmosphere containing Si element and C element. As described above, by heat-treating the SiC single crystal in an atmosphere containing the Si element and the C element, it is possible to produce a high-quality SiC seed crystal in which strain and crystal defects are suppressed.
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Patent Agency Ranking56.发明公开
公开(公告)号：EP3961169A1
公开(公告)日：2022-03-02
申请号：EP20796042.8
申请日：2020-04-24
Inventor： KANEKO, Tadaaki , DOJIMA, Daichi , ASHIDA, Koji , IHARA, Tomoya
Abstract: To provide a new temperature distribution evaluation method, a temperature distribution evaluation device, and a soaking range evaluation method, as the temperature distribution evaluation method which evaluates a temperature distribution of a heating area 40A provided in a heating device 40, the present invention is a temperature distribution evaluation method which, in the heating area 40A, heats a semiconductor substrate 10 and a transmitting and receiving body 20 for transporting a raw material to and from the semiconductor substrate 10, and evaluates a temperature distribution of the heating area 40A on the basis of a substrate thickness variation amount A of the semiconductor substrate 10. Accordingly, temperature distribution evaluation can be implemented for a high temperature area at 1600 - 2200°C or the like at which it is hard to evaluate the temperature distribution due to the limit of a thermocouple material.
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57.发明公开
公开(公告)号：EP3951027A1
公开(公告)日：2022-02-09
申请号：EP20784425.9
申请日：2020-03-25
Inventor： KANEKO, Tadaaki
IPC: C30B33/02 , H01L21/324
Abstract: Provided is a semiconductor substrate manufacturing device which is capable of uniformly heating the surface of a semiconductor substrate that has a relatively large diameter or major axis. The semiconductor substrate manufacturing device includes a container body for accommodating a semiconductor substrate and a heating furnace that has a heating chamber which accommodates the container body, and the heating furnace has a heating source in a direction intersecting the semiconductor substrate to be disposed inside the heating chamber.
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公开(公告)号：EP3951026A1
公开(公告)日：2022-02-09
申请号：EP20783505.9
申请日：2020-03-25
Inventor： KANEKO, Tadaaki
Abstract: Provided are a method for etching and growing a semiconductor substrate in the same device system, and a device therefor. The method for manufacturing a semiconductor substrate includes a first heating step of heating a heat treatment space which contains a semiconductor substrate and a transmission/reception body that transports atoms between the semiconductor substrate and the transmission/reception body such that a temperature gradient is formed between the semiconductor substrate and the transmission/reception body, and a second heating step of heating the same with the temperature gradient being vertically inverted.
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59.发明公开
公开(公告)号：EP3936646A1
公开(公告)日：2022-01-12
申请号：EP20766741.1
申请日：2020-03-03
Inventor： KANEKO, Tadaaki , YOSHIDA, Natsuki , AOKI, Kazufumi
Abstract: The present invention addresses the problem of providing method and device for manufacturing a SiC substrate in which the occurrence of a work-affected layer is reduced. The present invention also addresses the problem of providing a method and device for manufacturing a SiC substrate from which a work-affected layer is removed. The present invention is characterized by comprising: a main container 20 which can accommodate a SiC substrate 10 and which generates, by heating, a vapor pressure of a vapor-phase species including elemental Si and a vapor-phase species including elemental C in an internal space; and a heating furnace 30 for accommodating the main container 20, generating a vapor pressure of the vapor-phase species including elemental Si in the internal space, and heating so that a temperature gradient is formed; the main container 20 having an etching space S1 formed by causing a portion of the main container 20 disposed on the low-temperature side of the temperature gradient and the SiC substrate 10 to face each other in a state in which the SiC substrate is disposed on the high-temperature side of the temperature gradient.
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公开(公告)号：EP3936644A1
公开(公告)日：2022-01-12
申请号：EP20765997.0
申请日：2020-03-03
Inventor： KANEKO, Tadaaki
Abstract: The present invention addresses the problem of providing a novel SiC epitaxial substrate manufacturing method and manufacturing device therefor. An SiC substrate 10 and an SiC material 20, which has a lower doping concentration than said SiC substrate 10, are heated facing one another, and material is transported from the SiC material 20 to the SiC substrate 10 to form an SiC epitaxial layer 11. As a result, in comparison with the existing method (chemical vapour deposition), it is possible to provide an SiC epitaxial substrate manufacturing method with a reduced number of parameters to be controlled.
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