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51.发明公开Methods for forming silicon dioxide layers on substrates using atomic layer deposition 有权一种通过原子层沉积形成的二氧化硅的过程
公开(公告)号：EP1383163A2
公开(公告)日：2004-01-21
申请号：EP03253968.6
申请日：2003-06-24
发明人： Lee, Joo-won , Chu, Kang-soo , Park, Jae-eun , Yang, Jong-ho
IPC分类号： H01L21/316 , C23C16/40 , C23C16/02
CPC分类号： H01L21/31612 , C23C16/402 , C23C16/45534 , C23C16/56 , H01L21/02164 , H01L21/02208 , H01L21/02277 , H01L21/0228 , H01L21/02337 , H01L21/0234 , H01L21/3122 , H01L21/3141
摘要： Improved methods are disclosed for catalyst-assisted atomic layer deposition (ALD) to form a silicon dioxide layer having superior properties on a semiconductor substrate by using a first reactant component consisting of a silicon compound having at least two silicon atoms, or using a tertiary aliphatic amine as the catalyst component, or both in combination, together with related purging methods and sequencing.
摘要翻译： 改进的方法是圆盘游离缺失为催化剂辅助原子层沉积（ALD）以形成通过使用具有至少两个硅原子的第一反应物组分组成的有机硅化合物，或者使用叔脂族具有在半导体衬底的优异性能的二氧化硅层 胺作为催化剂组分或两者的组合，与相关吹扫方法和测序在一起。
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公开(公告)号：EP1242647B1
公开(公告)日：2003-08-13
申请号：EP00969596.6
申请日：2000-10-13
发明人： ELERS, Kai-Erik , HAUKKA, Suvi, Päivikki , SAANILA, Ville, Antero , KAIPIO, Sari, Johanna , SOININEN, Pekka, Juha
CPC分类号： C30B29/38 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/45531 , C23C16/45534 , C30B25/02 , C30B29/02 , C30B29/36 , H01L21/28562 , H01L21/76843
摘要： This invention concerns a method for depositing transition metal nitride thin films by an Atomic Layer Deposition (ALD) type process. According to the method vapor-phase pulses of a metal source material, a reducing agent capable of reducing metal source material, and a nitrogen source material capable of reacting with the reduced metal source material are alternately and sequentially fed into a reaction space and contacted with the substrate. According to the invention as the reducing agent is used a boron compound which is capable of forming gaseous reaction byproducts when reacting with the metal source material.
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