公开(公告)号：EP4389930A2

公开(公告)日：2024-06-26

申请号：EP23216580.3

申请日：2023-12-14

申请人： Samsung Electronics Co., Ltd. ,  Incheon National University Research & Business Foundation

发明人： CHO, Eunhyoung ,  LEE, Sunghee ,  LEE, Jeongyub ,  LEE, Hanboram

IPC分类号： C23C16/02 ,  C23C16/04 ,  C23C16/18 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56

CPC分类号： H01L21/28562 ,  H01L21/0228 ,  H01L21/76831 ,  C23C16/04 ,  C23C16/18 ,  C23C16/34 ,  C23C16/45534 ,  C23C16/45553 ,  C23C16/0272 ,  C23C16/56

摘要： A method of selectively forming a layer according to atomic layer deposition includes providing a substrate which includes a first region consisting of a first material and having a first surface and a second region consisting of a second material and having a second surface, forming a first reaction inhibition layer on the second surface using a reaction inhibitor selectively adsorbed on the second surface, selectively forming a first deposition layer on the first surface using a first precursor and a first reactant, wherein the first reactant reacts with the first precursor to form an atomic layer and does not react with the reaction inhibitor to form the atomic layer, and converting the first reaction inhibition layer on the second surface into a second deposition layer using a second reactant which reacts with the first reaction inhibition layer to form the atomic layer.

公开(公告)号：EP3359706A1

公开(公告)日：2018-08-15

申请号：EP16751563.4

申请日：2016-08-08

申请人： Luxembourg Institute of Science and Technology (LIST)

发明人： ARL, Didier ,  ADJEROUD, Noureddine ,  LENOBLE, Damien

IPC分类号： C23C16/455 ,  C23C16/40

CPC分类号： C23C16/45534 ,  C23C16/402 ,  C23C16/45527

摘要： A process of atomic layer deposition for the deposition of silicon oxide on a substrate, performed at room temperature, involving at least three precursors, being silicon tetrachloride, water and one Lewis base agent, being in various instances ammonia. The process comprises the steps of exposing on the substrate during an exposure time (a) the one Lewis base agent, (b) the silicon tetrachloride, and (c) the water. The process is remarkable in that at least one step of purge with nitrogen gas is performed after each of the steps (a), (b) and (c) during a purge time. Additionally, a film of silicon oxide which is remarkable in that it comprises a low level of chlorine contaminant and a significant degree of porosity with pores, the pores being in various instances micropores, mesopores or nanopores.

公开(公告)号：EP3089198A1

公开(公告)日：2016-11-02

申请号：EP16167046.8

申请日：2016-04-26

申请人： TOKYO ELECTRON LIMITED

发明人： Kihara, Yoshihide ,  Oishi, Tomoyuki ,  Hisamatsu, Toru

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/316

CPC分类号： H01L21/3065 ,  C23C16/402 ,  C23C16/45534 ,  C23C16/45542 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： A method for processing a target object by using a capacitively coupled plasma processing apparatus includes a first step of supplying a first gas containing a silicon-containing gas into the processing chamber where a target object is accommodated; a second step of generating a plasma of a rare gas in the processing chamber after executing the first step; a third step of generating a plasma of a second gas containing oxygen gas in the processing chamber after executing the second step; and a fourth step of generating a plasma of a rare gas in the processing chamber after executing the third step. A silicon oxide film is formed by repeatedly executing a sequence including the first step to the fourth step. A negative DC voltage is applied to the upper electrode in at least any one of the second step to the fourth step.

摘要翻译： 一种通过使用电容耦合等离子体处理装置处理目标物体的方法，包括：第一步骤，将含有含硅气体的第一气体供应到容纳目标物体的处理室中; 第二步骤，在执行第一步骤之后，在处理室中产生稀有气体的等离子体; 第三步骤，在执行所述第二步骤之后，在所述处理室内产生包含氧气的第二气体的等离子体; 以及在执行第三步骤之后在处理室中产生稀有气体的等离子体的第四步骤。 通过重复执行包括第一步至第四步的顺序来形成氧化硅膜。 在第二步骤至第四步骤中的至少任一个中，将负DC电压施加到上电极。

公开(公告)号：EP1383163A3

公开(公告)日：2004-07-07

申请号：EP03253968.6

申请日：2003-06-24

申请人： Samsung Electronics Co., Ltd.

发明人： Lee, Joo-won ,  Chu, Kang-soo ,  Park, Jae-eun ,  Yang, Jong-ho

IPC分类号： H01L21/316 ,  C23C16/40 ,  C23C16/02

CPC分类号： H01L21/31612 ,  C23C16/402 ,  C23C16/45534 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3122 ,  H01L21/3141

摘要： Improved methods are disclosed for catalyst-assisted atomic layer deposition (ALD) to form a silicon dioxide layer having superior properties on a semiconductor substrate by using a first reactant component consisting of a silicon compound having at least two silicon atoms, or using a tertiary aliphatic amine as the catalyst component, or both in combination, together with related purging methods and sequencing.

摘要翻译： 公开了改进的方法用于通过使用由具有至少两个硅原子的硅化合物组成的第一反应物组分或使用叔脂肪族化合物的催化剂辅助原子层沉积（ALD）在半导体衬底上形成具有优异性能的二氧化硅层 胺作为催化剂组分，或两者结合，以及相关的清除方法和测序。

公开(公告)号：EP1425435A2

公开(公告)日：2004-06-09

申请号：EP02798955.7

申请日：2002-09-10

申请人： ASM INTERNATIONAL N.V. ,  ASM Microchemistry Oy

发明人： ELERS, Kai Erik ,  LI, Wei-Min

IPC分类号： C23C16/455

CPC分类号： C23C16/45534 ,  C23C16/34 ,  C23C16/36 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10T428/24331 ,  H01L2924/00

摘要： The present methods provide tools for growing conformal metal thin films (150), including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.

公开(公告)号：EP3013997B1

公开(公告)日：2018-05-02

申请号：EP14817237.2

申请日：2014-06-27

申请人： Wayne State University

发明人： WINTER, Charles ,  KLESKO, Joseph Peter

IPC分类号： C23C16/44 ,  C23C16/52 ,  C23C16/06 ,  C07F7/08 ,  C23C16/18 ,  C23C16/455

CPC分类号： C23C16/18 ,  C23C16/45534 ,  C23C16/45553

摘要： A first compound having an atom in an oxidized state is reacted with a bis(trimethylsilyl) six-membered ring system or related compound to form a second compound having the atom in a reduced state relative to the first compound. The atom in an oxidized state is selected from the group consisting of Groups 2-12 of the Periodic Table, the lanthanides, As, Sb, Bi, Te, Si, Ge, Sn, and Al.

公开(公告)号：EP3013997A4

公开(公告)日：2017-05-31

申请号：EP14817237

申请日：2014-06-27

申请人： UNIV WAYNE STATE

发明人： WINTER CHARLES ,  KLESKO JOSEPH PETER

IPC分类号： C23C16/44 ,  C07F7/08 ,  C23C16/06 ,  C23C16/52

CPC分类号： C23C16/18 ,  C23C16/45534 ,  C23C16/45553

摘要： A first compound having an atom in an oxidized state is reacted with a bis(trimethylsilyl) six-membered ring system or related compound to form a second compound having the atom in a reduced state relative to the first compound. The atom in an oxidized state is selected from the group consisting of Groups 2-12 of the Periodic Table, the lanthanides, As, Sb, Bi, Te, Si, Ge, Sn, and Al.

摘要翻译： 在氧化状态中具有在原子的第1化合物与双（三甲硅烷基）六元环系统或相关的化合物反应以形成具有在相对于所述第一化合物还原态的原子的第二化合物。 在氧化状态的原子被选自元素周期表，镧系元素的组2-12的选择，砷，锑，铋，碲，硅，锗，锡，和Al。

公开(公告)号：EP3029175A1

公开(公告)日：2016-06-08

申请号：EP14196567.3

申请日：2014-12-05

申请人： BASF SE

发明人： Ruettinger, Wolfgang ,  Wagloehner, Steffen ,  Loeffler, Daniel ,  Ahlf, Maraike

IPC分类号： C23C16/455 ,  H01L21/02 ,  C23C16/30 ,  C23C16/56 ,  H01L21/768

CPC分类号： H01L21/02203 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/7682 ,  H01L2221/1047

摘要： The present invention relates to the production of porous thin films, in particular by atomic layer deposition. The present invention relates to a process for producing porous films comprising the steps
(a) exposing a solid substrate to a vapor containing an organic compound (A), whereby a submonolayer of the organic compound (A) covalently bound to the surface of the solid substrate is formed,
(b) exposing the solid substrate to a vapor containing a compound of general formula (I) SiX 4 (I),
wherein X is hydrogen, a halogen, an alkoxy, an aryloxy, or an amine group,
(c) exposing the solid substrate to a vapor containing an organic compound (B) which has at least two functional groups out of which at least one can form a covalent bond with the surface-bound organic compound (A),
(d) performing the steps
(d1) exposing the solid substrate to a vapor containing water, and
(d2) exposing the solid substrate to a vapor containing a compound of general formula (I), (e) exposing the solid substrate to a vapor containing an organic compound (C) which has at least two functional groups out of which at least one can form a covalent bond to the surface-bound organic compound (B),

(f) removing organic parts from the film formed on the surface of the solid substrate.

摘要翻译： 本发明涉及多孔薄膜的生产，特别是原子层沉积。 本发明涉及一种制造多孔膜的方法，该方法包括以下步骤：（a）将固体基材暴露于含有有机化合物（A）的蒸气中，由此使有机化合物（A）的亚单分子层共价结合到固体表面 （b）将固体基质暴露于含有其中X是氢，卤素，烷氧基，芳氧基或胺基的通式（I）SiX4（I）的化合物的蒸气，（c） 将固体基材暴露于含有具有至少两个官能团的有机化合物（B）的蒸气，其中至少一个官能团可与表面结合的有机化合物（A）形成共价键，（d）执行步骤（ （d2）将固体基质暴露于含有通式（I）化合物的蒸气中，（e）将固体基质暴露于含有机化合物（C）的蒸气中， 其中至少有两个功能组 可以与表面结合的有机化合物（B）形成共价键，（f）从形成在固体基质表面上的膜中除去有机部分。

公开(公告)号：EP2580371A2

公开(公告)日：2013-04-17

申请号：EP11755460.0

申请日：2011-06-08

申请人： President and Fellows of Harvard College

发明人： AIZENBERG, Joanna ,  HATTON, Benjamin

IPC分类号： C23C16/40 ,  C23C16/54 ,  C23C16/455

CPC分类号： C23C16/402 ,  B05D3/10 ,  B05D3/105 ,  B05D3/107 ,  C23C16/45525 ,  C23C16/45534 ,  C23C16/45551 ,  C23C16/45595 ,  C23C16/545

摘要： An ambient pressure Atomic Layer Deposition (ALD) technique to grow uniform silica layers onto organic substrates at low temperatures, including room temperature, is described. For example, tetramethoxysilane vapor is used alternately with ammonia vapor as a catalyst in an ambient environment.

公开(公告)号：EP2479313A1

公开(公告)日：2012-07-25

申请号：EP12164278.9

申请日：2008-10-31

申请人： Advanced Technology Materials, Inc.

发明人： Chen, Philip S.H. ,  Hunks, William ,  Chen, Tianniu ,  Stender, Matthias ,  Xu, Chongying ,  Roeder, Jeffrey F. ,  Li, Weimin

IPC分类号： C23C16/30 ,  H01L45/00 ,  C23C16/455 ,  C23C16/448 ,  C23C16/56 ,  C07F7/30

CPC分类号： C07F7/30 ,  C23C16/305 ,  C23C16/448 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/56 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616 ,  Y10T428/31678

摘要： Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN) 2 } 2 Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.

摘要翻译： 锗，碲和/或锑前体有用地用于形成锗，碲和/或锑的膜，例如GeTe，GST和含有热电锗的膜的膜。 还描述了使用这些前体形成非晶膜的方法。 进一步描述的是使用[{nBuC（iPrN）2} 2 Ge]或Ge偕丁酰胺形成用于相变存储器应用的GeTe平滑非晶膜。