SAMPLE-CONTAINING CELL FOR X-RAY MICROSCOPE AND METHOD FOR OBSERVING X-RAY MICROSCOPIC IMAGE
    52.
    发明公开
    SAMPLE-CONTAINING CELL FOR X-RAY MICROSCOPE AND METHOD FOR OBSERVING X-RAY MICROSCOPIC IMAGE 有权
    样品含有细胞X射线显微镜和监测方法的X射线图像微观

    公开(公告)号:EP2755209A1

    公开(公告)日:2014-07-16

    申请号:EP12830348.4

    申请日:2012-08-31

    IPC分类号: G21K7/00 G21K5/08

    摘要: Observation samples 16 in a sample solution 15 are held due to absorption or the like on the rear face of a first X-ray transmission film 14a. In a mirror body, while an X-ray emission film 13 and X-ray transmission films 14a and 14b are bent to be convex outward due to the pressure difference, an X-ray transmission film 14c is bent to be convex toward the X-ray transmission film 14a side due to gas expansion in a second cavity part 11b. This bending results in widening of a gap between the first and second X-ray transmission films 14a and 14b in the center part of these more compared with a gap between the end parts of these. However, despite the fact that lengthening of the X-ray optical path length over the primary visual field region of X-ray microscope observation arises between the X-ray transmission films 14b and 14c, there is almost no change between the X-ray transmission films 14a and 14c. Accordingly, even when the X-ray emission film and the X-ray transmission films are bent inside the mirror body, lengthening of the X-ray optical path length takes place in the second cavity part 11 b (gas portion) in which X-ray absorption does not take place, this enabling absorption of the X-rays by the sample solution 15 to be suppressed.

    摘要翻译: 样品溶液中的15个观测样品16被保持由于吸收或在第一X射线透射膜14a的背面等。 在一个反射镜体,同时,在X射线发射膜13和X射线透射膜14A和14B被弯曲以向外凸出是由于压力差,在X射线透射膜14C被弯曲以朝向X轴凸 在第二空腔部11b由于气体膨胀射线透射膜14a侧。 在本文中的中心部分的第一和第二X射线透射膜14A和14B之间的间隙加宽该弯曲结果与本文的端部之间的间隙更相比。 然而,尽管X射线的光路长度上的X射线显微镜观察主视野区域的factthat延长的X射线透射膜14b和14c之间产生,有X射线透射之间几乎没有变化 膜14a和14c。 因此,即使当X射线发射膜和X射线透射膜镜体内侧弯曲,在X射线的光路长度的延长发生在第二空腔部11b(气体部分),其中x 射线吸收不会发生,要被抑制由样品溶液15中的X射线的这个有利的吸收。

    EUV LIGHT SOURCE, EUV EXPOSURE SYSTEM, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
    53.
    发明授权
    EUV LIGHT SOURCE, EUV EXPOSURE SYSTEM, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE 有权
    EUV光源,EUV曝光装置及其制造方法半导体元件

    公开(公告)号:EP1775755B1

    公开(公告)日:2012-09-26

    申请号:EP05755680.5

    申请日:2005-06-22

    申请人: NIKON CORPORATION

    CPC分类号: H05G2/003 H05G2/005

    摘要: An Sn-Ga type alloy having a composition in which the atomic % of Sn is 15% or less is accommodated inside a heated tank 4. The Sn alloy pressurized by the pressurizing pump is conducted to a nozzle 1, so that a liquid-form Sn alloy is caused to jet from the tip end of this nozzle 1 disposed inside a vacuum chamber 7. The liquid-form Sn alloy that is caused to jet from the nozzle 1 has a spherical shape as a result of surface tension, and forms a target 2. Laser light generated by an Nd:YAG laser light source 8 disposed on the outside of the vacuum chamber 7 is focused by a lens 9 and introduced into the vacuum chamber 7. The target 2 that is irradiated by the laser is converted into a plasma, and radiates light that includes EUV light.

    EUV light source, EUV exposure system, and production method for semiconductor device
    54.
    发明公开
    EUV light source, EUV exposure system, and production method for semiconductor device 有权
    EUV光源,EUV曝光系统以及半导体装置的制造方法

    公开(公告)号:EP2498275A2

    公开(公告)日:2012-09-12

    申请号:EP12171328.3

    申请日:2005-06-22

    申请人: Nikon Corporation

    CPC分类号: H05G2/003 H05G2/005

    摘要: An Sn-Ga type alloy having a composition in which the atomic % of Sn is 15% or less is accommodated inside a heated tank 4. The Sn alloy pressurized by the pressurizing pump is conducted to a nozzle 1, so that a liquid-form Sn alloy is caused to jet from the tip end of this nozzle 1 disposed inside a vacuum chamber 7. The liquid-form Sn alloy that is caused to jet from the nozzle 1 has a spherical shape as a result of surface tension, and forms a target 2, Laser light generated by an Nd:YAG laser light source 8 disposed on the outside of the vacuum chamber 7 is focused by a lens 9 and introduced into the vacuum chamber 7. The target 2 that is irradiated by the laser is converted into a plasma, and radiates light that includes EUV light.

    摘要翻译: 具有其中Sn的原子百分比等于或小于15%的组成的Sn-Ga型合金被容纳在加热罐4内。由加压泵加压的Sn合金被传导到喷嘴1,从而形成液体形式 Sn合金从配置在真空腔室7内的喷嘴1的前端喷出。从喷嘴1喷出的液状Sn合金由于表面张力而呈球形,形成 目标2,由设置在真空室7外部的Nd:YAG激光源8产生的激光由透镜9聚焦并引入到真空室7中。由激光器照射的目标2被转换成 等离子体,并且发射包括EUV光的光。

    LASER PLASMA EUV LIGHT SOURCE, TARGET MEMBER, PRODUCTION METHOD FOR TARGET MEMBER, TARGET SUPPLYING METHOD, AND EUV EXPOSURE SYSTEM
    56.
    发明公开
    LASER PLASMA EUV LIGHT SOURCE, TARGET MEMBER, PRODUCTION METHOD FOR TARGET MEMBER, TARGET SUPPLYING METHOD, AND EUV EXPOSURE SYSTEM 审中-公开
    LASER-PLASMA-EUV-LICHTQUELLE,ZIELGLIED,HERSTELLUNGSVERFAHRENFÜREIN ZIELGLIED,ZIELBEREITSTELLUNGSVERFAHREN UND EUV-BELICHTUNGSSYSTEM

    公开(公告)号:EP1837897A1

    公开(公告)日:2007-09-26

    申请号:EP05822789.3

    申请日:2005-12-27

    申请人: NIKON CORPORATION

    摘要: Target 1 that is arranged in the disc direction is sprayed from nozzle 2 that has a slit-shaped aperture. Target 1 is conveyed on a gas stream. He gas is used in this example. Nozzle 2 may be vibrated by a piezo apparatus to spray disc-shaped target 1. Target 1 that is sprayed from nozzle 2 reaches the irradiation position of laser light with its direction unchanged since the exterior of nozzle 2 is maintained in a high vacuum. Synchronized with delivery of target 1, pulse laser light 5 from Nd:YAG light source 4 is focused by lens 3 and irradiated onto target 1. The spot diameter of the laser is the same 1 mm diameter as that of target 1. The thickness is not more than 1000 nm. Therefore, virtually the entire target is converted into plasma, debris generation is inhibited and the conversion efficiency is elevated.

    摘要翻译: 从盘状方向配置的靶1从具有狭缝状孔的喷嘴2喷出。 靶1在气流上传送。 在这个例子中使用他的气体。 喷嘴2可以通过压电装置振动以喷射盘形目标1.从喷嘴2喷射的目标1到达激光的照射位置,其方向不变,因为喷嘴2的外部保持在高真空中。 与目标1的传送同步,来自Nd:YAG光源4的脉冲激光5由透镜3聚焦并照射到目标1上。激光的光点直径与目标1的直径相同。厚度为 不超过1000nm。 因此,实际上整个目标被转换为等离子体,碎片产生被抑制并且转换效率提高。

    EUV LIGHT SOURCE, EUV EXPOSURE SYSTEM, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
    57.
    发明公开
    EUV LIGHT SOURCE, EUV EXPOSURE SYSTEM, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE 有权
    EUV-LICHTQUELLE,EUV-BELICHTUNGSSYSTEM UND VERFAHREN ZUR HERSTELLUNG VON HALBLEITERBAUELEMENTEN

    公开(公告)号:EP1775755A1

    公开(公告)日:2007-04-18

    申请号:EP05755680.5

    申请日:2005-06-22

    申请人: NIKON CORPORATION

    CPC分类号: H05G2/003 H05G2/005

    摘要: An Sn-Ga type alloy having a composition in which the atomic % of Sn is 15% or less is accommodated inside a heated tank 4. The Sn alloy pressurized by the pressurizing pump is conducted to a nozzle 1, so that a liquid-form Sn alloy is caused to jet from the tip end of this nozzle 1 disposed inside a vacuum chamber 7. The liquid-form Sn alloy that is caused to jet from the nozzle 1 has a spherical shape as a result of surface tension, and forms a target 2. Laser light generated by an Nd:YAG laser light source 8 disposed on the outside of the vacuum chamber 7 is focused by a lens 9 and introduced into the vacuum chamber 7. The target 2 that is irradiated by the laser is converted into a plasma, and radiates light that includes EUV light.

    摘要翻译: 具有其中Sn的原子%为15%以下的组成的Sn-Ga型合金容纳在加热槽4内。由加压泵加压的Sn合金被传导到喷嘴1,使得液态 使Sn合金从设置在真空室7内的喷嘴1的前端射出。由喷嘴1喷射的液态Sn合金由于表面张力而呈球形,形成 由设置在真空室7外部的Nd:YAG激光光源8产生的激光由透镜9聚焦并被引入真空室7.被激光照射的靶2被转换成 等离子体,并辐射包含EUV光的光。

    TARGET CONTAINER FOR NEUTRON SCATTERING APPARATUS
    58.
    发明公开
    TARGET CONTAINER FOR NEUTRON SCATTERING APPARATUS 审中-公开
    ZIELBEHÄLTERFÜRNEUTRONEN-STREUUNGSVORRICHTUNG

    公开(公告)号:EP1284482A4

    公开(公告)日:2006-10-11

    申请号:EP01932270

    申请日:2001-05-25

    IPC分类号: H05H6/00 G21K5/08

    CPC分类号: H05H6/00

    摘要: A target container built in a neutron scattering apparatus and containing a target material, e.g. a liquid metal has a beam window part of a thin structure through which a proton beam enters and which withstands against the stress due to pressure wave, the thermal stress, and the like. The target container has a double structure of inner and outer tubes spaced apart specifically and each having a beam window part that has a front face on which a proton beam impinges, wherein a cooling material is supplied between the inner and outer tubes and the target material is supplied inside the inner tube. The beam window part of the inner tube has a flat plate structure in order to lower the rigidity and to reduce the secondary stress generated in the target container by a pressure wave. Alternatively, the beam window part of the inner tube has a straight line longitudinal section to endure the pressure wave stress and a continuous curve lateral section to endure the thermal stress.

    摘要翻译: 含有液态金属靶材料的中子散射装置的目标电池具有其质子束进入的光束窗口,其形成为薄的结构,并且可以承受压力波应力和热应力。 在包括外壳和内壳的靶单元中,两者都具有形成有梁窗的前表面,并且在外壳和内壳之间形成有预定距离的双重结构,使得冷却介质为 在其中供应目标材料到内壳中,内壳的梁窗形成平板结构。 通过该平板结构,其刚性降低,并且由压力波引起的目标单元中产生的次级应力特性的电池应力减小。 或者,内壳的梁窗形成为在垂直部分具有线性前表面和在水平部分中具有连续弯曲的正面。 因此,在内壳的梁窗中,压力波应力和热应力分别由线性正面和连续弯曲的正面进行处理。

    Target device for producing a radioisotope
    60.
    发明公开
    Target device for producing a radioisotope 审中-公开
    Targetvorrichtung zum Erzeugen eines Radioisotops

    公开(公告)号:EP1569243A1

    公开(公告)日:2005-08-31

    申请号:EP04447049.0

    申请日:2004-02-20

    IPC分类号: G21G1/00 G21K5/08

    CPC分类号: G21G1/10 G21G1/00 H05H6/00

    摘要: The present invention is related to an irradiation cell for producing a radioisotope of interest through the irradiation of a target material by a particle beam, comprising a metallic insert (2) forming a cavity (7) designed to house the target material and to be closed by an irradiation window, characterised in that said metallic insert (2) comprises at least two separate metallic parts (8,9) of different materials, being composed of at least a first part (8) comprising said cavity (7).

    摘要翻译: 本发明涉及一种用于通过粒子束照射目标材料来生产感兴趣的放射性同位素的照射单元,包括形成设计成容纳目标材料并被封闭的空腔(7)的金属插入件(2) 通过辐射窗,其特征在于,所述金属插入件(2)包括至少两个不同材料的分开的金属部分(8,9),至少包括所述空腔(7)的第一部分(8)。