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122 条记录 (耗时 0.018 秒)

    Semiconductor Layer for Thin Film Transistors
    66.
    发明公开
    Semiconductor Layer for Thin Film Transistors 审中-公开
    用于薄膜晶体管的半导体层

    公开(公告)号：EP1993122A3

    公开(公告)日：2010-04-28

    申请号：EP08156207.6

    申请日：2008-05-14

    申请人： Xerox Corporation

    发明人： Li, Yuning ,  Ong, Beng S.

    IPC分类号： H01L21/368 ,  H01L21/02

    CPC分类号： H01L21/02554 ,  H01L21/02628 ,  H01L29/7869

    摘要： A method for making a zinc oxide semiconductor layer for a thin film transistor using solution processing at low temperatures is disclosed. The method comprises making a solution comprising a zinc salt and a complexing agent; applying the solution to a substrate; and heating the solution to form a semiconductor layer on the substrate. A thin film transistor using this zinc oxide semiconductor layer has good mobility and on/off ratio.

    Device with small molecular thiophene compound having divalent linkage
    67.
    发明公开
    Device with small molecular thiophene compound having divalent linkage 审中-公开
    排列与二价连接短链噻吩低聚物

    公开(公告)号：EP1605533A3

    公开(公告)日：2010-04-07

    申请号：EP05105046.6

    申请日：2005-06-09

    申请人： Xerox Corporation

    发明人： Ong, Beng S. ,  Liu, Ping ,  Wu, Yiliang

    IPC分类号： H01L51/30

    CPC分类号： H01L51/0036 ,  H01L51/0052 ,  H01L51/0068 ,  H01L51/0541 ,  H01L51/0545

    摘要： An electronic device composed of a semiconductor layer in contact with a number of electrodes, wherein the semiconductor layer includes a small molecular thiophene compound consisting of: at least one divalent linkage; and a plurality of thiophene units, each thiophene unit being represented by structure (A)

    wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position, wherein there is at least one thiophene unit where R 1 is present at the third ring position or the fourth ring position, or at both the third ring position and the fourth ring position, wherein for any two adjacent thiophene units there is excluded the simultaneous presence of the same or different R 1 at the 3-position of one thiophene unit and at the 3'-position of the other thiophene unit, and wherein the number of the thiophene units is at least 6.

    Semiconductor Layer for Thin Film Transistors
    69.
    发明公开
    Semiconductor Layer for Thin Film Transistors 审中-公开
    HalbleiterschichtfürDünnschichttransistoren

    公开(公告)号：EP1993122A2

    公开(公告)日：2008-11-19

    申请号：EP08156207.6

    申请日：2008-05-14

    申请人： Xerox Corporation

    发明人： Li, Yuning ,  Ong, Beng S.

    IPC分类号： H01L21/208

    CPC分类号： H01L21/02554 ,  H01L21/02628 ,  H01L29/7869

    摘要： A method for making a zinc oxide semiconductor layer for a thin film transistor using solution processing at low temperatures is disclosed. The method comprises making a solution comprising a zinc salt and a complexing agent; applying the solution to a substrate; and heating the solution to form a semiconductor layer on the substrate. A thin film transistor using this zinc oxide semiconductor layer has good mobility and on/off ratio.

    摘要翻译： 公开了一种在低温下使用溶液处理制造用于薄膜晶体管的氧化锌半导体层的方法。 该方法包括制备包含锌盐和络合剂的溶液; 将溶液施加到基底上; 并加热溶液以在衬底上形成半导体层。 使用该氧化锌半导体层的薄膜晶体管具有良好的迁移率和开/关比。

    Phase-separated dielectric structure fabrication process
    70.
    发明公开
    Phase-separated dielectric structure fabrication process 有权
    ren ren ren ren ren ren ren ren ren ren ren ren ren

    公开(公告)号：EP1978572A2

    公开(公告)日：2008-10-08

    申请号：EP08152980.2

    申请日：2008-03-19

    申请人： Xerox Corporation

    发明人： Wu, Yiliang ,  Mahabadi, Hadi K. ,  Ong, Beng S. ,  Smith, Paul F.

    IPC分类号： H01L51/05

    CPC分类号： H01L51/052 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

    摘要： A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

    摘要翻译： 一种制造电子器件的方法，包括：沉积包含半导体的层; 液体沉积包含低k电介质材料，较高k电介质材料和液体的电介质组合物，其中低k电介质材料和较高介电材料在液体沉积之前不相分离; 并且引起下部k电介质材料和较高k电介质材料的相分离以形成相分离电介质结构，其中低k电介质材料的浓度高于所述较高介电材料区域中的较高k电介质材料 介质结构最靠近包含半导体的层，其中沉积包含半导体的层在液体沉积电介质组合物之前或之后引起相分离。