公开(公告)号：EP2686888B1

公开(公告)日：2015-05-27

申请号：EP12712288.5

申请日：2012-03-06

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： KOHEN, David ,  KARST, Nicolas ,  PERRAUD, Simon

IPC分类号： H01L21/20 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/0312 ,  H01L31/074 ,  H01L29/06 ,  H01L29/12 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00

CPC分类号： H01L31/022408 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02554 ,  H01L21/02601 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02639 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/127 ,  H01L31/0312 ,  H01L31/0352 ,  H01L31/035227 ,  H01L31/03529 ,  H01L31/074 ,  Y02E10/50

公开(公告)号：EP2709163A2

公开(公告)日：2014-03-19

申请号：EP13184428.4

申请日：2013-09-13

申请人： The Boeing Company

发明人： King, Richard R ,  Fetzer, Christopher M ,  Nasser, Karam H

IPC分类号： H01L31/0687 ,  H01L31/0725 ,  H01L31/074 ,  H01L31/078

CPC分类号： H01L31/078 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/074 ,  H01L31/0745 ,  Y02E10/544 ,  Y02P70/521

摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

公开(公告)号：EP2157621A3

公开(公告)日：2012-12-12

申请号：EP09168254.2

申请日：2009-08-20

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Ito, Atsuo ,  Akiyama, Shoji ,  Kawai, Makoto ,  Tanaka, Kouichi ,  Tobisaka, Yuji ,  Kubota, Yoshihiro

IPC分类号： H01L31/18 ,  H01L31/072 ,  H01L31/048 ,  H01L31/0392 ,  H01L31/074

CPC分类号： H01L31/074 ,  H01L31/03926 ,  H01L31/056 ,  H01L31/182 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/546

摘要： The present invention provides a heterojunction solar cell where a silicon layer constituting a photoconversion layer is composed of a single-crystal silicon having a high crystallinity. The invention provides a process for manufacturing a heterojunction solar cell comprising the steps of: implanting at least one of a hydrogen ion and a noble gas ion into an n-type single-crystal silicon substrate to form an ion-implanted layer; allowing an ion-implanted surface of the n-type single-crystal silicon substrate to adhere to a metal substrate via an electroconductive adhesive; curing the electroconductive adhesive to form an electroconductive adhesion layer so that the n-type single-crystal silicon substrate and the metal substrate can laminate together; giving an impact to the ion-implanted layer to mechanically and partially delaminate the n-type single-crystal silicon substrate so as to leave an n-type single-crystal silicon layer on the metal substrate; depositing an n-type transparent semiconductor layer on the n-type single-crystal silicon layer; forming a collecting electrode on a part of the n-type transparent semiconductor layer; and forming a transparent protective film on both the n-type transparent semiconductor layer and the collecting electrode.

摘要翻译： 本发明提供一种异质结太阳能电池，其中构成光转换层的硅层由具有高结晶度的单晶硅构成。 本发明提供一种制造异质结太阳能电池的方法，包括以下步骤：将氢离子和惰性气体离子中的至少一种注入到n型单晶硅衬底中以形成离子注入层; 允许n型单晶硅衬底的离子注入表面通过导电粘合剂粘附到金属衬底; 固化导电粘合剂以形成导电粘合层，使得n型单晶硅基板和金属基板可层压在一起; 对离子注入层产生影响，以机械地和部分地分层n型单晶硅衬底，从而在金属衬底上留下n型单晶硅层; 在n型单晶硅层上沉积n型透明半导体层; 在n型透明半导体层的一部分上形成集电极; 在n型透明半导体层和集电极上形成透明保护膜。