利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

66 条记录 (耗时 0.017 秒)

    METHOD FOR PRODUCING POSITIVE PLATE MATERIAL FOR LITHIUM SECONDARY CELL
    2.
    发明公开
    METHOD FOR PRODUCING POSITIVE PLATE MATERIAL FOR LITHIUM SECONDARY CELL 审中-公开
    VERFAHREN ZUR HERSTELLUNG EINES POSITIV-PLATTENMATERIALSFÜREINE LITHIUM-SEKUNDÄRZELLE

    公开(公告)号：EP1553645A4

    公开(公告)日：2008-04-09

    申请号：EP03707039

    申请日：2003-02-25

    申请人： NIKKO MATERIALS CO LTD

    发明人： KAJIYA YOSHIO ,  TASAKI HIROSHI

    IPC分类号： H01M10/05 ,  C01G45/00 ,  C01G51/00 ,  C01G53/00 ,  H01M4/36 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525

    CPC分类号： H01M4/525 ,  C01G45/1242 ,  C01G51/42 ,  C01G51/54 ,  C01G53/42 ,  C01G53/44 ,  C01P2002/52 ,  C01P2002/54 ,  C01P2002/88 ,  C01P2004/61 ,  C01P2006/11 ,  C01P2006/12 ,  C01P2006/40 ,  H01M4/131 ,  H01M4/364 ,  H01M4/366 ,  H01M4/485 ,  H01M4/505 ,  H01M10/052 ,  H01M2004/021

    摘要： A positive plate material for lithium secondary cells stably exhibiting excellent performance including the cell initial capacity, cycle characteristics, and the safety. The material is procuded by dripping an aqueous solution of a salt (e.g., cobalt sulfate) of a doping element (e.g. a transition metal, an alkaline metal, an alkaline-earth metal, B, or Al) into an alkaline solution, a carbonate solution, or a hydrogencarbonate solution in any one of which a compound (e.g., manganese oxide) of a metal (Mn, Co, Ni, or the like) which is the major component of the positive plate material so as to precipitate the compound of the doping element on the major component and to cover the major component compound, mixing the major component compound covered with the doping element with a lithium compound (e.g., lithium carbonate), and firing the mixture.

    摘要翻译： 用于锂二次电池的正极板材料稳定地表现出包括电池初始容量，循环特性和安全性的优异性能。 该材料通过将掺杂元素（例如过渡金属，碱金属，碱土金属，B或Al）的盐（例如硫酸钴）的水溶液滴入碱性溶液中，碳酸盐 溶液或其中任何一种的碳酸氢盐溶液，其中作为正极板材的主要成分的金属（Mn，Co，Ni等）的化合物（例如，氧化锰），以使沉淀化合物 主要组分上的掺杂元素并覆盖主要组分化合物，将掺杂元素覆盖的主要组分化合物与锂化合物（例如，碳酸锂）混合，并焙烧该混合物。

    METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL
    6.
    发明公开
    METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL 有权
    用于生产化合物半导体单晶构成

    公开(公告)号：EP0992618A4

    公开(公告)日：2005-09-07

    申请号：EP99910741

    申请日：1999-03-29

    申请人： NIKKO MATERIALS CO LTD

    发明人： ASAHI TOSHIAKI ,  KAINOSHO KEIJI ,  NOZAKI TATSUYA ,  SATO KENJI

    IPC分类号： C30B11/00 ,  C30B29/40

    CPC分类号： C30B29/46 ,  C30B11/00 ,  C30B11/002 ,  C30B11/003 ,  C30B29/40 ,  C30B29/48

    摘要： A method of manufacturing a compound semiconductor single crystal as a first embodiment, comprising charging compound semiconductor materials into a crucible having an inverted conical increased-diameter part at the lower end thereof and a seed crystal storing part at the center of the bottom of the increased-diameter part, enclosing the crucible into a container, placing the container in a vertical heating furnace to melt the materials by heating and solidifying the obtained material molten liquid in the upward direction by gradually cooling the liquid from below, characterized in that a crystal growth speed at the increased-diameter part of the crucible is 20 mm/hr or higher at the time of the solidification. A method of manufacturing a compound semiconductor single crystal as a second embodiment, comprising placing a bottomed cylindrical crucible supported by a supporting means in a hot zone surrounded by a tubular refractory wall and an upper lid inside a high pressure container and gradually cooling a molten compound semiconductor liquid stored in the crucible from below, characterized in that a temperature fluctuation in the hot zone is reduced by inducing by a gas flow induction means a gas stream flowing form below to above around the crucible.

    MANGANESE OXIDE PRODUCING METHOD
    8.
    发明公开
    MANGANESE OXIDE PRODUCING METHOD 审中-公开
    用于生产锰

    公开(公告)号：EP1493715A1

    公开(公告)日：2005-01-05

    申请号：EP03701729.0

    申请日：2003-01-15

    申请人： Nikko Materials Co., Ltd.

    发明人： KAJIYA, Yoshio, c/o Petoca Materials Ltd. ,  TASAKI, Hiroshi, c/o Petoca Materials Ltd.

    IPC分类号： C01G45/02

    CPC分类号： C01G45/02 ,  C01P2004/32 ,  C01P2004/61 ,  C01P2006/11 ,  C01P2006/12

    摘要： The invention is intended to establish means for stably producing manganese oxide high in tap density, suitable for use as a raw material for producing a positive plate material of a lithium secondary cell at high production yield and with high work efficiency. The means comprise the steps of employing a rotary kiln as a roasting furnace when producing manganese oxide by roasting of manganese carbonate, starting the roasting by supplying the manganese carbonate through a material charging port of the rotary kiln while filling up the roasting furnace with a low oxidizing atmosphere, (for example, in the atmosphere with oxygen concentration not more than 15%) and continuing the roasting of material for roasting while blowing an oxygen-containing gas (for example, a gas with oxygen concentration not less than 15%) onto the material for roasting, placed at a position inside the roasting furnace, away at a distance from the material charging port. Atmospheric temperature inside the roasting furnace is preferably kept in a range of 400 to 600°C.

    METHOD OF ELECTROLESS PLATING AND SEMICONDUCTOR WAFER HAVING METAL PLATING LAYER FORMED THEREON
    10.
    发明公开
    METHOD OF ELECTROLESS PLATING AND SEMICONDUCTOR WAFER HAVING METAL PLATING LAYER FORMED THEREON 有权
    VERFAHREN ZUR STROMLOSEN METALLABSCHEIDUNG UND HALBLEITERWAFER MIT DARAUF AUSGEBILDETER METALLABSCHEIDUNGSSCHICHT

    公开(公告)号：EP1498511A4

    公开(公告)日：2006-10-11

    申请号：EP03747201

    申请日：2003-03-26

    申请人： NIKKO MATERIALS CO LTD

    发明人： IMORI TORU ,  SEKIGUCHI JUNNOSUKE ,  YABE ATSUSHI

    IPC分类号： C23C18/16 ,  C23C18/18 ,  C23C18/28 ,  H01L21/288 ,  H01L21/768

    CPC分类号： H01L21/76874 ,  C23C18/1844 ,  C23C18/31 ,  H01L21/288 ,  H01L2221/1089

    摘要： A method of electroless plating, which comprises applying a silane coupling agent having a functional group capable of capturing a metal, further applying a solution in an organic solvent of a palladium compound such as palladium chloride, and then performing an electroless plating. The method allows the preparation of a semiconductor wafer having an electroless plating layer which is thin, uniform and smooth, is formed with good adhesiveness, and further is suitable also as a seed layer. Specifically, a semiconductor wafer having a film thickness of 70 to 500 Å and an average surface roughness (Ra) of 10 to 100 Å can be prepared.

    摘要翻译： 本发明的目的是提供一种半导体晶片，其上形成了可以适用于种子层的薄的，平滑的，均匀的和良好的粘合剂化学镀层，并提供适合使用的无电镀方法 在这种半导体晶片的制造中。 半导体晶片涂覆有具有能够捕获金属的官能团的硅烷偶联剂，并进一步用钯化合物如氯化钯等的有机溶剂溶液涂布。 之后，晶片被无电镀。 作为这种无电镀方法的结果，可以获得厚度为70-5000埃，平均表面粗糙度Ra为10-100埃的半导体晶片。