公开(公告)号：EP0992618A4

公开(公告)日：2005-09-07

申请号：EP99910741

申请日：1999-03-29

申请人： NIKKO MATERIALS CO LTD

发明人： ASAHI TOSHIAKI ,  KAINOSHO KEIJI ,  NOZAKI TATSUYA ,  SATO KENJI

IPC分类号： C30B11/00 ,  C30B29/40

CPC分类号： C30B29/46 ,  C30B11/00 ,  C30B11/002 ,  C30B11/003 ,  C30B29/40 ,  C30B29/48

摘要： A method of manufacturing a compound semiconductor single crystal as a first embodiment, comprising charging compound semiconductor materials into a crucible having an inverted conical increased-diameter part at the lower end thereof and a seed crystal storing part at the center of the bottom of the increased-diameter part, enclosing the crucible into a container, placing the container in a vertical heating furnace to melt the materials by heating and solidifying the obtained material molten liquid in the upward direction by gradually cooling the liquid from below, characterized in that a crystal growth speed at the increased-diameter part of the crucible is 20 mm/hr or higher at the time of the solidification. A method of manufacturing a compound semiconductor single crystal as a second embodiment, comprising placing a bottomed cylindrical crucible supported by a supporting means in a hot zone surrounded by a tubular refractory wall and an upper lid inside a high pressure container and gradually cooling a molten compound semiconductor liquid stored in the crucible from below, characterized in that a temperature fluctuation in the hot zone is reduced by inducing by a gas flow induction means a gas stream flowing form below to above around the crucible.

公开(公告)号：EP1114884A4

公开(公告)日：2001-03-27

申请号：EP01300009

申请日：2001-01-02

申请人： NIKKO MATERIALS CO LTD

发明人： FUJIMURA SHIGETO ,  ASAHI TOSHIAKI ,  SATO KENJI

IPC分类号： H01L21/208 ,  C30B11/00 ,  C30B11/04 ,  C30B11/14

CPC分类号： C30B29/48 ,  C30B11/04 ,  C30B11/14 ,  C30B29/40