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    METHOD TO THIN A SILICON-ON-INSULATOR SUBSTRATE
    2.
    发明公开
    METHOD TO THIN A SILICON-ON-INSULATOR SUBSTRATE 审中-公开
    方法硅绝缘体上薄

    公开(公告)号：EP2422360A2

    公开(公告)日：2012-02-29

    申请号：EP10713998.2

    申请日：2010-04-20

    申请人： S.O.I.Tec Silicon on Insulator Technologies

    发明人： REYNAUD, Patrick ,  ECARNOT, Ludovic ,  RADOUANE, Khalid

    IPC分类号： H01L21/306 ,  H01L21/762

    CPC分类号： H01L21/30604 ,  H01L21/76254

    摘要： The invention concerns a method to thin an initial silicon-on-insulator SOI substrate, comprising a layer (3) of silicon oxide SiO
    2 buried between a silicon carrier substrate (2) and a silicon surface layer. This method is noteworthy in that it comprises the following successive steps consisting of conducting: -thermal oxidation treatment of said initial substrate, to oxidize part of said silicon surface layer, -a first, then a second cycle of etching and cleaning, the first cycle etching being performed so as fully to remove the formed thermal oxide and to lift off all the unstable parts of the edge of said initial substrate, the second cycle etch being conducted to remove from the surface of said thinned substrate the formed polluting particles (5) deposited thereupon, so as to obtain a final SOI substrate (1') whose thinned surface layer (4') forms an active layer.

    PROCESS FOR IMPROVING THE SURFACE ROUGHNESS OF A WAFER
    3.
    发明授权
    PROCESS FOR IMPROVING THE SURFACE ROUGHNESS OF A WAFER 有权
    VERFAHREN ZUR VERBESSERUNG DERÖBERFLÄCHENRAUHIGKEITEINES HALBLEITERWAFERS

    公开(公告)号：EP1690289B1

    公开(公告)日：2011-02-16

    申请号：EP03789586.9

    申请日：2003-12-03

    申请人： S.O.I.Tec Silicon on Insulator Technologies

    发明人： NEYRET, Eric ,  ARENE, Emmanuel ,  ECARNOT, Ludovic

    IPC分类号： H01L21/324 ,  H01L21/302 ,  H01L21/477

    CPC分类号： H01L21/3247 ,  H01L21/02052 ,  H01L21/76251

    摘要： The present invention relates to a process for reducing the roughness of the free surface of a semiconductor wafer, said process comprising a single annealing step for smoothing said free surface, said single annealing step being carried out as a RTA under an atmosphere of pure argon, characterized in that before the RTA the atmosphere of the annealing environment is purged in a controlled manner so as to establish a controlled purged atmosphere allowing reduction of preliminary pollutants on the wafer.

    摘要翻译： 本发明涉及一种降低半导体晶片的自由表面粗糙度的方法，所述方法包括用于平滑所述自由表面的单一退火步骤，所述单个退火步骤在纯氩气氛下作为RTA进行， 其特征在于，在RTA之前，以受控的方式清除退火环境的气氛，以便建立受控的吹扫气氛，从而减少晶片上的初步污染物。

    PROCEDE DE DIMINUTION DE RUGOSITE DE SURFACE
    6.
    发明公开
    PROCEDE DE DIMINUTION DE RUGOSITE DE SURFACE 审中-公开
    程序德尺寸DE RUGOSITE DE表面

    公开(公告)号：EP1412972A2

    公开(公告)日：2004-04-28

    申请号：EP02782466.3

    申请日：2002-07-04

    申请人： S.O.I.Tec Silicon on Insulator Technologies

    发明人： NEYRET, Eric ,  ECARNOT, Ludovic

    IPC分类号： H01L21/324 ,  H01L21/306 ,  H01L21/762 ,  H01L21/302 ,  H01L21/316

    CPC分类号： H01L21/3247 ,  H01L21/302 ,  H01L21/324 ,  H01L21/76254

    摘要： The invention relates to a method for reducing the rugosity of the free surface of a slice of semiconductor material. Said method comprises an annealing step in order to smooth said free surface. The invention is characterized in that the method for reducing free surface rugosity comprising a single smoothing annealing step which is carried out in the form of rapid thermal annealing in an atmosphere which is exclusively comprised of pure argon. The invention also relates to a structure produced by said method.

    摘要翻译： 本发明涉及一种用于减小半导体材料片的自由表面的粗糙度的方法。 所述方法包括退火步骤以平滑所述自由表面。 本发明的特征在于用于减少自由表面粗糙度的方法包括在纯粹由纯氩组成的气氛中以快速热退火形式进行的单一平滑退火步骤。 本发明还涉及由所述方法生产的结构。