公开(公告)号：EP4439739A1

公开(公告)日：2024-10-02

申请号：EP22895344.4

申请日：2022-10-24

申请人： Toyo Tanso Co., Ltd. ,  The Doshisha

发明人： INABA, Minoru ,  SHODAI, Yoshio

IPC分类号： H01M4/90 ,  B01J23/42 ,  B01J35/10 ,  H01M4/96

CPC分类号： Y02E60/50 ,  B01J23/42 ,  H01M4/90 ,  H01M4/96 ,  B01J35/60 ,  H01M4/926 ,  C01B32/00 ,  H01M2008/109520130101 ,  H01M4/92

摘要： Realized are a carbon support for a fuel cell catalyst and a catalyst for a fuel cell which have excellent durability and excellent catalytic activity when a catalyst metal is supported. A carbon support according to an embodiment of the present invention has diffraction peaks of a (002) plane which are observed at least at 2Θ = 22.5° to 25°, 26°, and 26.5° in an X-ray diffraction spectrum with CuKα rays, has an intensity ratio I(P1)/I(P2) between a peak P1 at 2Θ = 26° and a peak P2 at 2Θ = 26.5° of not less than 1.4, and has a BET specific surface area of not less than 1000 m2/g.

公开(公告)号：EP3223302B1

公开(公告)日：2021-01-06

申请号：EP15861199.6

申请日：2015-11-17

发明人： YABUKI, Norihito ,  TORIMI, Satoshi ,  NOGAMI, Satoru

IPC分类号： H01L21/265 ,  H01L21/673 ,  H01L29/16 ,  H01L21/336

公开(公告)号：EP2439308B1

公开(公告)日：2020-05-06

申请号：EP10783292.5

申请日：2010-05-25

申请人： Toyo Tanso Co., Ltd.

发明人： ABE, Yoshihisa ,  WATANABE, Masanari ,  TAMURA, Osamu

IPC分类号： C23C8/64

公开(公告)号：EP3605585A1

公开(公告)日：2020-02-05

申请号：EP18771381.3

申请日：2018-03-20

申请人： Toyo Tanso Co., Ltd.

发明人： TORIMI, Satoshi ,  SUDO, Yusuke ,  SHINOHARA, Masato ,  TERAMOTO, Youji ,  SAKAGUCHI, Takuya ,  NOGAMI, Satoru ,  KITABATAKE, Makoto

IPC分类号： H01L21/205 ,  C30B29/36 ,  H01L21/20

摘要： In a method for manufacturing a reformed SiC wafer 41 (a surface treatment method for a SiC wafer) having its surface that is reformed by processing an untreated SiC wafer 40 before formation of an epitaxial layer 42, the method includes a surface reforming step as described below. That is, the untreated SiC wafer 40 includes BPDs as dislocations parallel to an inside of a (0001) face, and TEDs. Property of the surface of the untreated SiC wafer 40 is changed so as to have higher rate in which portions having BPDs on the surface of the untreated SiC wafer 40 propagate as TEDs at a time of forming the epitaxial layer 42.

公开(公告)号：EP2647736B1

公开(公告)日：2019-02-20

申请号：EP11844774.7

申请日：2011-07-06

申请人： Toyo Tanso Co., Ltd.

发明人： WATANABE, Masanari ,  ABE, Yoshihisa

IPC分类号： C23C8/64

公开(公告)号：EP3076464B1

公开(公告)日：2019-01-02

申请号：EP14864290.3

申请日：2014-11-25

申请人： National Institute of Technology ,  Toyo Tanso Co., Ltd.

发明人： OKANO, Hiroshi ,  YODA, Masashi ,  TSURUOKA, Takuro ,  HOSOKAWA, Toshihiro ,  MISAKI, Nobuya

IPC分类号： H01M4/46 ,  H01M4/86 ,  H01M4/96 ,  H01M12/06 ,  H01M8/0234

公开(公告)号：EP2858219B1

公开(公告)日：2018-12-05

申请号：EP13797737.7

申请日：2013-05-29

申请人： Toyo Tanso Co., Ltd.

发明人： TAKUMA, Masayuki

IPC分类号： H02K13/00 ,  H01R39/22 ,  H01R39/26

CPC分类号： H01R39/22 ,  H01R39/26

摘要： A carbon brush is provided that inhibits the temperature increase and the increase of rubbing noise that result from excessive formation of a commutator film. A carbon brush includes a carbon block substrate having pores in a surface thereof and an inner portion thereof, the carbon brush making sliding contact with a commutator provided in a motor. A suspension containing an oil and a petroleum-based solvent having a boiling point higher than a temperature of the carbon brush at a time of operation of the motor exists in the pores. It is desirable that the proportion of the suspension be from 0.5 weight % to 6 weight % with respect to the carbon block substrate.

公开(公告)号：EP3361496A1

公开(公告)日：2018-08-15

申请号：EP16853278.6

申请日：2016-10-06

申请人： Toyo Tanso Co., Ltd.

发明人： TORIMI, Satoshi ,  SHINOHARA, Masato ,  YABUKI, Norihito ,  NOGAMI, Satoru

IPC分类号： H01L21/3065 ,  H01L21/302 ,  H01L21/683

CPC分类号： H01L21/67115 ,  H01L21/0475 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/6875

摘要： A heat treatment container (1) is provided with support members (6) for supporting a disc-shaped SiC substrate (2), which is an object, at a time of an etching treatment of the SiC substrate (2). Each of the support members (6) has an inclined surface (6F) for supporting a lower surface end (2E) of the SiC substrate (2), the inclined surface being inclined so as to increasingly approach the centerline of the SiC substrate (2) going downward. More specifically, each of the support members (6) is formed in a conical shape with a diameter that increases going downward, and a conical surface which is the peripheral surface of each supporting member forms the inclined surface (6F). A vertically-middle section of the inclined surface (6F) contacts the lower surface end (2E) of the SiC substrate (2).

公开(公告)号：EP2657375B1

公开(公告)日：2018-08-08

申请号：EP11850722.7

申请日：2011-06-29

申请人： Toyo Tanso Co., Ltd.

发明人： TORIMI, Satoshi ,  NOGAMI, Satoru ,  MATSUMOTO, Tsuyoshi

IPC分类号： C30B29/36 ,  C30B19/12 ,  C30B28/14

CPC分类号： C30B19/12 ,  C30B28/14 ,  C30B29/36 ,  Y10T428/26

摘要： Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material 12 for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer thereof, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.

公开(公告)号：EP2508475A4

公开(公告)日：2018-04-04

申请号：EP10833330

申请日：2010-11-26

申请人： AIST ,  TOYO TANSO CO

发明人： SONEDA YASUSHI ,  KODAMA MASAYA ,  MORISHITA TAKAHIRO

IPC分类号： C01B21/06 ,  C01B31/02 ,  H01G11/22 ,  H01G11/32 ,  H01G11/34 ,  H01G11/44

CPC分类号： H01G11/34 ,  C01B21/0605 ,  C01B32/05 ,  C01P2006/12 ,  H01G11/32 ,  H01G11/44 ,  Y02E60/13

摘要： A nitrogen-containing carbon porous material, which has a nitrogen content of 0.5 to 30 mass%, and which has a specific surface area of 200 to 3,000 m 2 /g.