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公开(公告)号：EP3889949A1
公开(公告)日：2021-10-06
申请号：EP18926379.1
申请日：2018-11-26
发明人： LV, Yaochao , CHENG, Hao , LI, Zongxiang , LIAO, Jiamin , TAO, Wenchang , HONG, Guichun , WU, Zhendian , LIN, Linlin , LIU, Zuwen , WANG, Jin , QIU, Xinmao , SHI, Changhong , ZHUANG, Zihua , ZHOU, Min , HUANG, Yawen , LIU, Yao , ZHU, Jingguang , LIN, Jiantao , CHEN, Xi
IPC分类号： G09G3/20
摘要： Provided are a display panel and a driving method thereof. The display panel includes an array substrate (100), the display panel including a display region (410) and a peripheral region (420) surrounding the display region. In the peripheral region (420), a common voltage wiring (VC), a voltage feedback wiring (FB), a periodic signal wiring, and a decoupling wiring (DP) are disposed on the array substrate (100) at intervals; the common voltage wiring (VC) is configured to transmit a common voltage signal for display to a pixel array in the display region (410), the voltage feedback wiring (FB) is configured to transmit a voltage feedback signal for monitoring changes in the common voltage signal, the periodic signal wiring is configured to provide the pixel array with a periodic signal for display, the decoupling wiring (DP) is located between the periodic signal wiring and the voltage feedback wiring (FB), and is configured to transmit a decoupling signal for reducing coupling distortion of the voltage feedback signal caused by coupling effect of the periodic signal. The display panel may avoid periodical horizontal stripes.
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公开(公告)号：EP3650896A1
公开(公告)日：2020-05-13
申请号：EP18789312.8
申请日：2018-03-07
发明人： WANG, Qiaoni , CHEN, Hui , LUO, Shijian , ZHANG, Xinyu , LIN, Yabin
IPC分类号： G02B6/122
摘要： Embodiments of the present disclosure provide a transparent display device and a manufacturing method thereof. The transparent display device includes a display panel (100) and a total internal reflection type photonic crystal backplate (200), the display panel (100) includes a display side and an incident side opposite to the display side, the total internal reflection type photonic crystal backplate (200) is disposed at the incident side of the display panel (100); the total internal reflection type photonic crystal backplate (200) includes a substrate (201) and a plurality of pillar structures periodically arranged in the substrate, wherein a refractive index of the plurality of pillar structures is different from a refractive index of the substrate. the total internal reflection type photonic crystal backplate can convert light incident into a display panel from different directions into vertical incident light.
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公开(公告)号：EP3594739A1
公开(公告)日：2020-01-15
申请号：EP17899860.5
申请日：2017-12-13
发明人： YAO, Liqing , CHEN, Xi , LIU, Yao , LI, Zongxiang , LIAO, Jiamin
IPC分类号： G02F1/1335 , G02F1/13
摘要： The present disclosure relates to a color film substrate, a display panel and a method for detecting a display panel. The CF substrate includes a display region and a peripheral region corresponding to a dummy pixel region around the display region. A black matrix of the color filter substrate includes a light transmitting section in a portion of the peripheral region corresponding to a dummy pixel unit. The light transmitting section includes a first set of light transmitting sections and a second set of light transmitting sections. Each of the first and second set of light transmitting sections is respectively formed in a portion that extends along a first side and a second side which is opposite to the first side of the display region and corresponds to the dummy pixel unit.
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公开(公告)号：EP4160697A1
公开(公告)日：2023-04-05
申请号：EP20963841.0
申请日：2020-12-01
发明人： LIN, Bin , LI, Zengrong , GUO, Hangle , ZOU, Zhenyou , LI, Liangliang , LE, Fadian
IPC分类号： H01L29/786 , H01L21/335 , H01L21/336
摘要： The present application relates to the technical field of display. Disclosed are an oxide thin film transistor and a preparation method therefor, and a display device. In the oxide thin film transistor, the orthographic projection of a protective layer on a base substrate covers the orthographic projection of a channel layer on the base substrate. The protective layer can protect the channel layer and prevent the side of the channel layer away from the base substrate from being etched by an etchant to ensure the reliability of current transmission through the channel layer. Moreover, as the conductivity of a first part and a second part of the protective layer is good, the first part and the second part do not generate a large amount of heat when a current flows into the channel layer through the first part or the second part, such that the reliability of the oxide thin film transistor is improved.
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5.发明公开
公开(公告)号：EP4345910A1
公开(公告)日：2024-04-03
申请号：EP21955429.2
申请日：2021-08-31
发明人： LIN, Bin , LI, Liangliang , LIU, Zheng , HU, Bo , ZHANG, Rui , PENG, Xinlin
IPC分类号： H01L29/786 , H01L29/417
摘要： The present disclosure relates to a metal oxide thin-film transistor and a manufacturing method therefor, a display panel and a display apparatus, which belong to the technical field of displays. The metal oxide thin-film transistor comprises a gate electrode, a gate insulating layer, a metal oxide semiconductor layer, a source electrode and a drain electrode, and a passivation layer, which are sequentially arranged on a base substrate, wherein the source electrode and the drain electrode each have a stacked structure, the stacked structure of the source electrode or the drain electrode at least comprises a main body metal layer and an electrode protection layer, and the electrode protection layer contains metal or metal alloy; the electrode protection layer is at least arranged between the metal oxide semiconductor layer and the main body metal layer; a metal oxide layer is provided between the electrode protection layer and the main body metal layer, and a metal element of the metal oxide layer comprises at least one of a metal element of the main body metal layer and a metal element of the electrode protection layer; the thickness of the metal oxide layer does not exceed 2% of the thickness of either one of the source electrode and the drain electrode; and the thickness of the metal oxide layer does not exceed 10% of the thickness of the electrode protection layer.
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6.发明公开
公开(公告)号：EP4002004A1
公开(公告)日：2022-05-25
申请号：EP19932281.9
申请日：2019-07-16
发明人： LI, Zongxiang , WANG, Wenchao , YAN, Jinglong , WU, Hongjiang , WANG, Baoqiang , LIU, Wenrui , CHEN, Xi , LIU, Yao , LIN, Hongtao , TAO, Wenchang
IPC分类号： G02F1/1362
摘要： An array substrate (100), a display panel (10), a display device (20), and a manufacturing method for an array substrate are provided. The array substrate (100) comprises a pixel unit group (110). The pixel unit group (110) comprises a first pixel and a second pixel arranged side by side and immediately adjacent to each other in a first direction (D1); the first pixel comprises a first pixel electrode (121), a first switching element (123), and a first connection portion (122) extending and protruding from the first pixel electrode (121); the second pixel comprises a second pixel electrode (131), a second switching element (133), and a second connection portion (132) extending and protruding from the second pixel electrode (131); the first pixel electrode (121) and the first switching element (123) are electrically connected to each other via the first connection portion (122); the second pixel electrode (131) and the second switching element (133) are electrically connected to each other via the second connection portion (132); and an extension length of the first connection portion (122) is not equal to an extension length of the second connection portion (132). The array substrate (100), the display panel (10), the display device (20), and the manufacturing method for an array substrate can improve the performance of the display device (20) including the array substrate (100).
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公开(公告)号：EP3996140A1
公开(公告)日：2022-05-11
申请号：EP20894942.0
申请日：2020-05-15
发明人： HU, Ye , DIAO, Kai , HOU, Qingna , XIE, Hongzhou , ZHENG, Shangtao , YU, Renhui , ZHA, Wen , CHEN, Xin , CHEN, Meizhen
IPC分类号： H01L27/32
摘要： The present disclosure provides a display panel, a method for driving the display panel and a display device. The display panel includes a display region and a non-display region. The non-display region includes a first bonding region, and further includes first connection lines connected to a plurality of gate lines respectively and second connection lines connected to a plurality of data lines respectively. The display panel further includes at least one chip on film, the chip on film includes a second bonding region, a first region, and a second region between the second bonding region and the first region. A scanning driving integrated circuitry connected to the second bonding region via first wirings and a data driving integrated circuitry connected to the second bonding region via second wirings are bonded in the first region. The first wirings and the second wirings are arranged at different layers in the second region. According to the present disclosure, it is able to provide the display device with a narrow bezel as a whole.
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公开(公告)号：EP3615997A1
公开(公告)日：2020-03-04
申请号：EP17882254.0
申请日：2017-12-15
发明人： LUO, Shijian , CHEN, Hui , ZHANG, Xinyu
IPC分类号： G02F1/1335
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公开(公告)号：EP4369417A1
公开(公告)日：2024-05-15
申请号：EP22863247.7
申请日：2022-08-24
发明人： LIN, Bin , WANG, Yang , ZOU, Zhenyou , LE, Fadian , XI, Wenxing , YU, Xue
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/786 , H01L29/66477 , H01L21/34
摘要： Disclosed are a metal oxide thin film transistor and a manufacturing method therefor, and a display panel, relating to the field of display technology. Since the oxygen content in a first insulation layer of the metal oxide thin film transistor is high, the oxygen in the first insulation layer may diffuse into a metal oxide semiconductor layer, so that oxygen replenishment for the metal oxide semiconductor layer is achieved, and the stability of the metal oxide thin film transistor is thereby improved. In addition, the first insulation layer matches the metal oxide semiconductor layer at an interface therebetween, which may reduce surface defects of the metal oxide semiconductor layer. In addition, the percentage by number of oxygen atoms contained in the metal oxide semiconductor layer is greater than 45%, such that an excessive amount of oxygen vacancies in the metal oxide semiconductor layer is prevented, and the characteristic negative bias of the metal oxide thin film transistor is not easily caused when a device works. In this way, sand point defects of products caused by the characteristic negative bias of the metal oxide thin film transistor may be effectively reduced.
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公开(公告)号：EP3944214A1
公开(公告)日：2022-01-26
申请号：EP19921276.2
申请日：2019-03-22
发明人： CHEN, Qifei , LU, Kun , ZHOU, Xing , ZHANG, Xiaozhe , BAI, Ling , XU, Di , XU, Dongliang , REN, Liangliang , LIU, Xiaofeng , LU, Shan , LU, Jingzhou , SONG, Guannan , MA, Huaping
IPC分类号： G08G1/087
摘要： A method and device for enabling a target vehicle to pass rapidly, the method comprising: determining a traffic route of the target vehicle according to the location and destination of the target vehicle (S101); acquiring in real time position information of the target vehicle (S102); and according to the real-time position information and traffic route of the target vehicle, controlling a lane indication device in the traffic route to indicate a dedicated lane used by the target vehicle in the traffic route, and when the target vehicle passes an intersection, controlling a traffic signal lamp to indicate to vehicles interfering with the transit of the target vehicle to stop driving (S103).
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