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公开(公告)号：EP3016155B1
公开(公告)日：2018-03-07
申请号：EP14816818.0
申请日：2014-05-26
发明人： CHEN, Zhiming , GU, Wei
摘要： Disclosed is a method for manufacturing an N-type semiconductor element for a cooling or heating device, the N-type semiconductor element is made of tellurium material, bismuth material and selenium material, firstly, smashing and grinding the tellurium material, the bismuth material and the selenium material to be 2000 meshes or more than 2000 meshes; and then, according to the proportion of each material in parts by weight, proportioning the materials to obtain a mixture, the proportion thereof is: 40 to 44 parts of tellurium, 53 to 57 parts of bismuth and 28 to 32 parts of selenium. When the N-type semiconductor element is in operation, the temperature difference between the two ends thereof is larger, and through a test, when the N-type semiconductor element is in operation, the temperature difference between the cold end and the hot end reaches about 73°C to 78°C. Therefore, the N-type semiconductor element has the advantages of high operation efficiency and lower energy consumption. The N-type semiconductor element is particularly suitable for manufacturing a cooling or heating device of a semiconductor.
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2.发明公开LOW-LIGHT-FAILURE HIGH-POWER LED ROAD LAMP AND MANUFACTURING METHOD THEREFOR 有权LEISTUNGSSTARKE LED-STRASSENLAMPE MIT GERINGEM LICHTFEHLER UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP3015764A4
公开(公告)日：2016-06-29
申请号：EP14816753
申请日：2014-05-26
发明人： CHEN ZHIMING , GU WEI
CPC分类号： F21V29/76 , F21S8/086 , F21V29/51 , F21V29/54 , F21V29/71 , F21W2131/103 , F21Y2115/10 , H01L35/32 , H01L35/34
摘要： Disclosed is a low light failure high power LED street lamp and a method for manufacturing the same. A color mark is made in advance on a tail end surface used for manufacturing an N-type semiconductor element (6) or a P-type semiconductor element (7); then the N-type semiconductor element (6) and P-type semiconductor element (7) are arranged in a manner of matrix between an upper beryllium-oxide ceramic wafer (8) and a lower beryllium-oxide ceramic wafer (9), so that the head end of the N-type semiconductor element (6) is connected with the tail end of the P-type semiconductor element (7) or the tail end of the N-type semiconductor element (6) is connected with the head end of the P-type semiconductor element (7), then the lower beryllium-oxide ceramic wafer (9) is attached, through a graphene thermal conductive greaseon layer (4), on the backside of the circuit board (2) which is mounted with LED bulbs (3), and a heat sink (15) is mounted on the upper beryllium-oxide ceramic wafer (8), then the circuit board (2) together with the heat sink (15) are mounted into a street lamp housing (1).
摘要翻译： 公开了一种低光衰大功率LED路灯及其制造方法。 在用于制造N型半导体元件（6）或P型半导体元件（7）的尾端表面上预先制作彩色标记; 那么N型半导体元件（6）和P型半导体元件（7）以上铍氧化物陶瓷晶片（8）和下铍氧化物陶瓷晶片（9）之间的矩阵方式排列，因此 N型半导体元件（6）的前端与P型半导体元件（7）的尾端连接，或者N型半导体元件（6）的尾端与头端 通过石墨烯导热油脂层（4），在安装有P型半导体元件（7）的电路板（2）的背面上安装下部铍氧化物陶瓷晶片（9） 在上铍氧化物陶瓷晶片（8）上安装有LED灯泡（3）和散热器（15），然后将电路板（2）与散热片（15）一起安装在路灯壳体（ 1）。
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3.发明公开METHOD FOR MANUFACTURING N-TYPE SEMICONDUCTOR ELEMENT FOR REFRIGERATION OR HEATING DEVICE 有权方法生产N-半导体元件进行冷却或加热装置
公开(公告)号：EP3016155A1
公开(公告)日：2016-05-04
申请号：EP14816818.0
申请日：2014-05-26
发明人： CHEN, Zhiming , GU, Wei
IPC分类号： H01L35/34
摘要： Disclosed is a method for manufacturing an N-type semiconductor element for a cooling or heating device, the N-type semiconductor element is made of tellurium material, bismuth material and selenium material, firstly, smashing and grinding the tellurium material, the bismuth material and the selenium material to be 2000 meshes or more than 2000 meshes; and then, according to the proportion of each material in parts by weight, proportioning the materials to obtain a mixture, the proportion thereof is: 40 to 44 parts of tellurium, 53 to 57 parts of bismuth and 28 to 32 parts of selenium. When the N-type semiconductor element is in operation, the temperature difference between the two ends thereof is larger, and through a test, when the N-type semiconductor element is in operation, the temperature difference between the cold end and the hot end reaches about 73°C to 78°C. Therefore, the N-type semiconductor element has the advantages of high operation efficiency and lower energy consumption. The N-type semiconductor element is particularly suitable for manufacturing a cooling or heating device of a semiconductor.
摘要翻译： 公开了用于制造N型半导体元件，用于冷却或加热装置的方法，所述N型半导体元件由碲材料，铋材料和硒材料，首先，粉碎和研磨碲材料中，铋材料和 硒材料是2000个网格或超过2000项目; 然后，雅丁每种材料的重量份的比例，配料的材料以得到混合物，其比例为40〜44份碲，53至57份的铋和28至32份的硒。 当N型半导体元件是在外科手术中，在两个端部之间的温度差其较大，并通过一个测试中，当N型半导体元件是在外科手术中，冷端和热端到达之间的温度差 约73℃至78℃。 因此，N型半导体元件具有高操作效率和较低的能量消耗的优点。 所述N型半导体元件特别适用于制造半导体的冷却或加热装置。
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4.发明公开
公开(公告)号：EP3015764A1
公开(公告)日：2016-05-04
申请号：EP14816753.9
申请日：2014-05-26
发明人： CHEN, Zhiming
IPC分类号： F21V29/00 , H01L23/367 , F21Y115/10
CPC分类号： F21V29/76 , F21S8/086 , F21V29/51 , F21V29/54 , F21V29/71 , F21W2131/103 , F21Y2115/10 , H01L35/32 , H01L35/34
摘要： Disclosed is a low light failure high power LED street lamp and a method for manufacturing the same. A color mark is made in advance on a tail end surface used for manufacturing an N-type semiconductor element (6) or a P-type semiconductor element (7); then the N-type semiconductor element (6) and P-type semiconductor element (7) are arranged in a manner of matrix between an upper beryllium-oxide ceramic wafer (8) and a lower beryllium-oxide ceramic wafer (9), so that the head end of the N-type semiconductor element (6) is connected with the tail end of the P-type semiconductor element (7) or the tail end of the N-type semiconductor element (6) is connected with the head end of the P-type semiconductor element (7), then the lower beryllium-oxide ceramic wafer (9) is attached, through a graphene thermal conductive greaseon layer (4), on the backside of the circuit board (2) which is mounted with LED bulbs (3), and a heat sink (15) is mounted on the upper beryllium-oxide ceramic wafer (8), then the circuit board (2) together with the heat sink (15) are mounted into a street lamp housing (1).
摘要翻译： 公开了一种低光衰大功率LED路灯及其制造方法。 在用于制造N型半导体元件（6）或P型半导体元件（7）的尾端表面上预先形成彩色标记; 则在上氧化铍陶瓷晶片（8）和下氧化铍陶瓷晶片（9）之间以矩阵方式布置N型半导体元件（6）和P型半导体元件（7），如此 所述N型半导体元件（6）的头端与所述P型半导体元件（7）的尾端连接或者所述N型半导体元件（6）的尾端与所述头端 （7）的背面上，然后通过石墨烯导热油脂层（4）将下氧化铍陶瓷片（9）附着在电路板（2）的背面上，所述电路板 在上氧化铍陶瓷片（8）上安装LED灯泡（3）和散热片（15），然后将电路板（2）与散热片（15）一起安装到路灯外壳 1）。
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公开(公告)号：EP3015765A4
公开(公告)日：2016-06-29
申请号：EP14818281
申请日：2014-05-26
发明人： CHEN ZHIMING , GU WEI
IPC分类号： F21V29/54 , F21V29/70 , F21Y115/10 , H01L35/30 , H01L35/34
CPC分类号： H01L33/64 , F21V29/51 , F21V29/52 , F21V29/54 , F21V29/70 , F21Y2101/00 , F21Y2115/10 , H01L23/373 , H01L23/3737 , H01L33/645 , H01L35/30 , H01L2924/0002 , H01L2933/0075 , H01L2924/00
摘要： Disclosed are a high-power LED lamp cooling device and a method for manufacturing the same. The method includes: manufacturing a semiconductor crystal bar used for manufacturing N-type semiconductor elements or P-type semiconductor elements in advance into a cone-shaped crystal bar of which one end has a large diameter and the other end has a small diameter, and then making a color mark on each wafer as the large-diameter end surface of the tail end when the cone-shaped semiconductor crystal bar is cut into slices; and cutting and pelletizing the conical surface of each wafer to obtain polygonal cylindrical N-type semiconductor elements or P-type semiconductor elements, arranging the N-type semiconductor elements and the P-type semiconductor elements in a matrix form between two beryllium-oxide ceramic chips which are provided with conductive circuits, and connecting the head end of each column of N-type semiconductor elements to the tail end of the P-type semiconductor elements in series mutually, so as to manufacture a high-power LED lamp cooling device. The high-power LED lamp cooling device can realize the technical effects of: good cooling effect, high working efficiency and low energy consumption and being capable of reducing the light failure of an LED lamp, and prolonging the service life of the high-power LED lamp.
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公开(公告)号：EP3015764B1
公开(公告)日：2018-09-19
申请号：EP14816753.9
申请日：2014-05-26
发明人： CHEN, Zhiming , GU, Wei
CPC分类号： F21V29/76 , F21S8/086 , F21V29/51 , F21V29/54 , F21V29/71 , F21W2131/103 , F21Y2115/10 , H01L35/32 , H01L35/34
摘要： Disclosed is a low light failure high power LED street lamp and a method for manufacturing the same. A color mark is made in advance on a tail end surface used for manufacturing an N-type semiconductor element (6) or a P-type semiconductor element (7); then the N-type semiconductor element (6) and P-type semiconductor element (7) are arranged in a manner of matrix between an upper beryllium-oxide ceramic wafer (8) and a lower beryllium-oxide ceramic wafer (9), so that the head end of the N-type semiconductor element (6) is connected with the tail end of the P-type semiconductor element (7) or the tail end of the N-type semiconductor element (6) is connected with the head end of the P-type semiconductor element (7), then the lower beryllium-oxide ceramic wafer (9) is attached, through a graphene thermal conductive greaseon layer (4), on the backside of the circuit board (2) which is mounted with LED bulbs (3), and a heat sink (15) is mounted on the upper beryllium-oxide ceramic wafer (8), then the circuit board (2) together with the heat sink (15) are mounted into a street lamp housing (1).
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公开(公告)号：EP3015765B1
公开(公告)日：2018-08-08
申请号：EP14818281.9
申请日：2014-05-26
发明人： CHEN, Zhiming , GU, Wei
IPC分类号： F21V29/54 , F21Y115/10 , H01L35/34 , H01L35/30
CPC分类号： H01L33/64 , F21V29/51 , F21V29/52 , F21V29/54 , F21V29/70 , F21Y2101/00 , F21Y2115/10 , H01L23/373 , H01L23/3737 , H01L33/645 , H01L35/30 , H01L2924/0002 , H01L2933/0075 , H01L2924/00
摘要： Disclosed are a high-power LED lamp cooling device and a method for manufacturing the same. The method includes: manufacturing a semiconductor crystal bar used for manufacturing N-type semiconductor elements or P-type semiconductor elements in advance into a cone-shaped crystal bar of which one end has a large diameter and the other end has a small diameter, and then making a color mark on each wafer as the large-diameter end surface of the tail end when the cone-shaped semiconductor crystal bar is cut into slices; and cutting and pelletizing the conical surface of each wafer to obtain polygonal cylindrical N-type semiconductor elements or P-type semiconductor elements, arranging the N-type semiconductor elements and the P-type semiconductor elements in a matrix form between two beryllium-oxide ceramic chips which are provided with conductive circuits, and connecting the head end of each column of N-type semiconductor elements to the tail end of the P-type semiconductor elements in series mutually, so as to manufacture a high-power LED lamp cooling device. The high-power LED lamp cooling device can realize the technical effects of: good cooling effect, high working efficiency and low energy consumption and being capable of reducing the light failure of an LED lamp, and prolonging the service life of the high-power LED lamp.
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8.发明公开METHOD FOR MANUFACTURING N-TYPE SEMICONDUCTOR ELEMENT FOR REFRIGERATION OR HEATING DEVICE 有权方法生产N-半导体元件进行冷却或加热装置
公开(公告)号：EP3016155A4
公开(公告)日：2016-11-30
申请号：EP14816818
申请日：2014-05-26
发明人： CHEN ZHIMING , GU WEI
摘要： Disclosed is a method for manufacturing an N-type semiconductor element for a cooling or heating device, the N-type semiconductor element is made of tellurium material, bismuth material and selenium material, firstly, smashing and grinding the tellurium material, the bismuth material and the selenium material to be 2000 meshes or more than 2000 meshes; and then, according to the proportion of each material in parts by weight, proportioning the materials to obtain a mixture, the proportion thereof is: 40 to 44 parts of tellurium, 53 to 57 parts of bismuth and 28 to 32 parts of selenium. When the N-type semiconductor element is in operation, the temperature difference between the two ends thereof is larger, and through a test, when the N-type semiconductor element is in operation, the temperature difference between the cold end and the hot end reaches about 73°C to 78°C. Therefore, the N-type semiconductor element has the advantages of high operation efficiency and lower energy consumption. The N-type semiconductor element is particularly suitable for manufacturing a cooling or heating device of a semiconductor.
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9.发明公开HIGH-POWER LED LAMP COOLING DEVICE AND MANUFACTURING METHOD THEREFOR 有权HOCHLEISTUNGS-LED-LAMPENKÜHLVORRICHTUNGUND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP3015765A1
公开(公告)日：2016-05-04
申请号：EP14818281.9
申请日：2014-05-26
发明人： CHEN, Zhiming , GU, Wei
IPC分类号： F21V29/00 , H01L23/34 , F21Y115/10
CPC分类号： H01L33/64 , F21V29/51 , F21V29/52 , F21V29/54 , F21V29/70 , F21Y2101/00 , F21Y2115/10 , H01L23/373 , H01L23/3737 , H01L33/645 , H01L35/30 , H01L2924/0002 , H01L2933/0075 , H01L2924/00
摘要： Disclosed are a high-power LED lamp cooling device and a method for manufacturing the same. The method includes: manufacturing a semiconductor crystal bar used for manufacturing N-type semiconductor elements or P-type semiconductor elements in advance into a cone-shaped crystal bar of which one end has a large diameter and the other end has a small diameter, and then making a color mark on each wafer as the large-diameter end surface of the tail end when the cone-shaped semiconductor crystal bar is cut into slices; and cutting and pelletizing the conical surface of each wafer to obtain polygonal cylindrical N-type semiconductor elements or P-type semiconductor elements, arranging the N-type semiconductor elements and the P-type semiconductor elements in a matrix form between two beryllium-oxide ceramic chips which are provided with conductive circuits, and connecting the head end of each column of N-type semiconductor elements to the tail end of the P-type semiconductor elements in series mutually, so as to manufacture a high-power LED lamp cooling device. The high-power LED lamp cooling device can realize the technical effects of: good cooling effect, high working efficiency and low energy consumption and being capable of reducing the light failure of an LED lamp, and prolonging the service life of the high-power LED lamp.
摘要翻译： 公开了一种大功率LED灯冷却装置及其制造方法。 该方法包括：将用于制造N型半导体元件或P型半导体元件的半导体晶体棒预先制造成其一端具有大直径并且另一端具有小直径的锥形晶体棒，以及 然后在圆锥形半导体晶体棒切割成切片时，在每个晶片上形成作为尾端的大直径端面的颜色标记; 并且切割并造粒每个晶片的锥形表面以获得多边形圆柱形N型半导体元件或P型半导体元件，将N型半导体元件和P型半导体元件以矩阵形式布置在两个氧化铍氧化物陶瓷 芯片，其设置有导电电路，并且将N型半导体元件的每列的前端相互串联连接到P型半导体元件的尾端，以制造大功率LED灯冷却装置。 大功率LED灯冷却装置可以实现以下技术效果：冷却效果好，工作效率高，能耗低，能够减少LED灯的故障，延长大功率LED的使用寿命 灯。
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