Plasma etching apparatus
    1.
    发明公开
    Plasma etching apparatus 审中-公开
    Plasmaätzgerät

    公开(公告)号:EP1750294A1

    公开(公告)日:2007-02-07

    申请号:EP06118054.3

    申请日:2006-07-28

    发明人: Jeon, Bu-Il

    IPC分类号: H01J37/32

    CPC分类号: H01J37/32532

    摘要: The present invention relates to a plasma etching apparatus, and provides a plasma etching apparatus comprising a substrate support (20) on which a substrate (30) is seated; an electrode (42,42) disposed close to a surface of the substrate to be etched; a dielectric film (52,54) formed on a surface of the electrode adjacent to the substrate; and a power supply means (80) for generating potential difference between the electrode and the substrate support. In the apparatus, potential difference is applied between the substrate support with the substrate seated thereon and the electrode surrounding an edge region of the substrate, and a distance between the substrate and the electrode is set to 3 mm or less so as to locally generate plasma in an area between the substrate and the electrode, thereby removing particles and a thin film in the edge region of the substrate. Further, a gas acting as a curtain is injected to a central area of an upper side of the substrate to prevent plasma generated between the substrate and the electrode from being introduced into the central area of the upper side of the substrate. In addition, plasma can be generated at approximately atmospheric pressure and normal temperature.

    摘要翻译: 等离子体蚀刻装置技术领域本发明涉及一种等离子体蚀刻装置,其特征在于,提供一种等离子体蚀刻装置,其包括:基板支架(20),基板(30)位于其上; 设置在待蚀刻的基板的表面附近的电极(42,42); 形成在所述电极的与所述基板相邻的表面上的电介质膜(52,54) 以及用于产生电极和衬底支撑件之间的电位差的电源装置(80)。 在该装置中,在基板支撑件与其上安装的基板和围绕基板的边缘区域的电极之间施加电位差,将基板与电极之间的距离设定为3mm以下,以局部产生等离子体 在基板和电极之间的区域中,从而在基板的边缘区域中去除颗粒和薄膜。 此外,作为帘幕的气体被注入到基板的上侧的中心区域,以防止在基板和电极之间产生的等离子体被引入到基板的上侧的中心区域中。 此外,等离子体可以在大气压和常温下产生。

    Plasma etching apparatus
    4.
    发明公开
    Plasma etching apparatus 有权
    等离子刻蚀

    公开(公告)号:EP1748465A3

    公开(公告)日:2009-10-14

    申请号:EP06118053.5

    申请日:2006-07-28

    发明人: Jeon, Bu-Il

    IPC分类号: H01J37/32

    摘要: The present invention relates to a plasma etching apparatus, which comprises a chamber (10), a substrate support (30) disposed inside the chamber to support a substrate (20), a shield (40) disposed with a gap (T3) on the substrate such that plasma is not generated therein while allowing an edge portion (21) of the substrate to be exposed, an antenna (53) disposed at a position on an outer wall of the chamber to apply plasma-generating power to an area between the edge portion of the substrate and an inner wall of the chamber, and a bias-applying unit (60) for applying bias to the substrate support. According to the present invention, the shield (40) and the substrate support (30) prevent plasma from being generated at other portions of a substrate except an edge portion (21) of the substrate. Inductively coupled plasma is employed to generate plasma with high density, thereby removing a thin film and particles remained at the edge portion of the substrate. In addition, by means of the discharging of inductively coupled plasma, it is possible to improve an etching rate at the edge portion of the substrate and to adjust the profile of an etching process at a low processing pressure.

    SOLAR CELL AND METHOD FOR MANUFACTURING SAME

    公开(公告)号:EP4287275A1

    公开(公告)日:2023-12-06

    申请号:EP22767360.5

    申请日:2022-02-18

    摘要: The present invention provides a solar cell, including: a semiconductor substrate; a first semiconductor layer provided on one surface of the semiconductor substrate; a second semiconductor layer provided on one surface of the first semiconductor layer; a third semiconductor layer provided on one surface of the second semiconductor layer; a first transparent conductive layer provided on one surface of the third semiconductor layer; and a first electrode provided on one surface of the first transparent conductive layer, wherein the second semiconductor layer includes a p-type semiconductor layer, and the third semiconductor layer includes a p+-type semiconductor layer including W, and a method of manufacturing the solar cell.

    Antenna device for generating inductively coupled plasma
    10.
    发明公开
    Antenna device for generating inductively coupled plasma 审中-公开
    用于产生电感耦合等离子体的天线装置

    公开(公告)号:EP1079671A3

    公开(公告)日:2001-11-07

    申请号:EP00401460.1

    申请日:2000-05-25

    IPC分类号: H05H1/46 H01J37/32

    CPC分类号: H01J37/321 H05H1/46

    摘要: The invention relates to an antenna device of a low impedance for generating a large quantity of inductively coupled plasma to process a large size of a specimen with adjustment for a uniform distribution in the density of plasma, comprising: a high frequency power source; a first antenna for receiving the high frequency power supplied from the high frequency power source; and a second antenna connected in parallel with the first antenna for receiving the high frequency power supplied from the high frequency power source, wherein a resonant state is kept between the first and second antennas.

    摘要翻译: 本发明涉及一种低阻抗天线装置,用于产生大量电感耦合等离子体,以调整等离子体密度的均匀分布来处理大尺寸的试样,该天线装置包括:高频电源; 第一天线,用于接收从高频电源提供的高频功率; 以及与第一天线并联连接的第二天线,用于接收从高频电源提供的高频电力,其中在第一和第二天线之间保持谐振状态。