RECESSED LIFT SPOILER ASSEMBLY FOR AIRFOILS
    2.
    发明公开
    RECESSED LIFT SPOILER ASSEMBLY FOR AIRFOILS 有权
    VERSENKTE HEBESPOILERANORDNUNGFÜRTRAGFLÄCHEN

    公开(公告)号:EP2991896A4

    公开(公告)日:2016-10-19

    申请号:EP14792283

    申请日:2014-04-28

    发明人: EMERICK MARK F

    摘要: A spoiler assembly is provided that is engageable to a UAV that defines a body, an outer surface and an inner surface. The spoiler assembly comprises a spoiler, translatably connected to the UAV inner surface adjacent a first portion of the spoiler aperture. The spoiler defines an upper surface and an outer surface, the upper surface being substantially the same size and shape as the spoiler aperture. A spoiler shroud is connected to the UAV inner surface and extends within the UAV body about at least a portion of the spoiler aperture. A spoiler activating mechanism is secured to the UAV inner surface and connected the spoiler lower surface. The mechanism is operative to translate the spoiler between a first position wherein the spoiler upper surface is substantially flush with the UAV outer surface, and second a position, wherein the spoiler upper surface is disposed substantially within the UAV body.

    摘要翻译: 提供了能够限定主体,外表面和内表面的UAV的扰流器组件。 扰流器组件包括扰流板,其可扰动地连接到与扰流器孔径的第一部分相邻的无人机内表面。 扰流器限定上表面和外表面,上表面与扰流器孔径基本相同的尺寸和形状。 扰流器护罩连接到无人机内表面,并且在UAV体内围绕扰流器孔的至少一部分延伸。 扰流器启动机构固定在无人机内表面并连接扰流器下表面。 该机构可操作以将扰流板在第一位置和第二位置之间平移扰流板上表面基本上与UAV外表面齐平的位置,其中扰流器上表面基本上设置在无人机内。

    INTERNAL/EXTERNAL SINGLE EXPANSION RAMP NOZZLE WITH INTEGRATED THIRD STREAM
    3.
    发明公开
    INTERNAL/EXTERNAL SINGLE EXPANSION RAMP NOZZLE WITH INTEGRATED THIRD STREAM 审中-公开
    INTERNE / EXTERNEEINZELEXPANSIONSRAMPENDÜSEMIT INTEGRIERTEM DRITTEM STROM

    公开(公告)号:EP2971722A4

    公开(公告)日:2016-08-31

    申请号:EP14768361

    申请日:2014-02-19

    IPC分类号: F02K1/00 F02K1/78

    摘要: The construction of an internal/external single expansion ramp nozzle (nxSERN), and method of designing the same, is provided. Initial design parameters for primary stream construction are selected and additional parameters are determined by isentropic relations using the selected design parameters and Prandtl-Meyer function. The nozzle throat input and output angles are determined and used to define an initial portion of the nozzle primary stream lower expansion surface. The nozzle primary stream upper expansion surface and an aft portion of the primary stream lower expansion surface are defined using a method of characteristics. Initial and aft portions of the primary stream lower expansion surface are then connected by a straight line to define the primary stream nozzle.

    摘要翻译: 提供了内部/外部单个膨胀斜面喷嘴(nxSERN)的结构及其设计方法。 选择初级流构造的初始设计参数,并使用选定的设计参数和Prandtl-Meyer函数通过等熵关系确定附加参数。 喷嘴喉部输入和输出角度被确定并用于限定喷嘴主流下部膨胀表面的初始部分。 使用特征的方法来限定喷嘴主流上部膨胀表面和主流下部膨胀表面的后部。 然后通过直线连接主流下部膨胀表面的初始和后部以限定主流喷嘴。

    GLOBAL DISEASE SURVEILLANCE PLATFORM, AND CORRESPONDING SYSTEM AND METHOD
    7.
    发明公开
    GLOBAL DISEASE SURVEILLANCE PLATFORM, AND CORRESPONDING SYSTEM AND METHOD 审中-公开
    全球疾病监控平台及相应的系统和VERFARHEN

    公开(公告)号:EP2052318A4

    公开(公告)日:2014-04-30

    申请号:EP06815070

    申请日:2006-09-21

    IPC分类号: G06F19/00 G06Q50/00

    摘要: A computer-implemented method for identifying and assessing public health events, and a corresponding system and apparatus, includes capturing public health-related information from structured and unstructured sources, where the information is contained in one or more documents, extracting meta-data from the captured public health-related information, creating an index of the extracted meta-data; archiving the meta-data and the documents, where the index links meta-data to its associated document, processing the extracted meta-data according to one or more detection algorithms to determine if an anomaly exists, and where an anomaly exists, providing a public health event notification, and monitoring and evaluating the responses to the public health events.

    SELF ALIGNED GATE AND GUARD RING STRUCTURE FOR USE IN A SIT
    10.
    发明公开
    SELF ALIGNED GATE AND GUARD RING STRUCTURE FOR USE IN A SIT 有权
    SELBSTAUSGERICHTETE GATE-GUARD-RINGSTRUKTURFÜRSIT

    公开(公告)号:EP2033224A4

    公开(公告)日:2009-06-03

    申请号:EP07809251

    申请日:2007-05-31

    发明人: CHEN LI-SHU

    摘要: Three layers of a SiC material oriented on a substrate with the top layer covered with a thick oxide. A mask comprising a plurality of strips is deposited on the oxide. An etch removes the oxide, the third layer, and a portion of the second layer, leaving a plurality of pillars. An oxidation step forms a skirt at the base of each pillar and consumes the edge portions of the third layer under the oxide forming a source. Ion implantation forms gate regions between the skirts while a plurality of guard rings is formed. Removal of all oxid results in a semiconductor structure to which source, gate and drain connections may be made to form a static induction transistor. A greater separation between a source and gate is obtained by placing a spacer layer on the sidewalls of the pillars, either before or afte formation of the skirt.

    摘要翻译: 在衬底上定向的三层SiC材料,顶层覆盖有厚氧化物。 包含多个条带的掩模沉积在氧化物上。 蚀刻去除氧化物,第三层和第二层的一部分,留下多个柱。 氧化步骤在每个柱的基部形成裙部并消耗形成源的氧化物下的第三层的边缘部分。 离子注入在裙部之间形成栅极区域,同时形成多个保护环。 去除全部氧化物导致半导体结构可以形成源极,栅极和漏极连接以形成静电感应晶体管。 通过在支柱的侧壁上放置间隔层,可以在裙部形成之前或之后获得源极和栅极之间更大的间隔。