摘要:
A semiconductor device, for example a drift detector, comprises a piece of semiconductor material. On a surface of said piece of semiconductor material, a number of electrodes (1013, 1014) exist and are configured to assume different electric potentials. A guard structure comprises a two-dimensional array of conductive patches (1012), at least some of which are left to assume an electric potential under the influence of electric potentials existing at said electrodes. The guard structure controllably lowers an electric potential on the surface of the semiconductor material, which is advantageous from the manufacturing point of view and offers versatility in designing the other features of the semiconductor device.
摘要:
A radiation detector comprises a piece of semiconducting material. On its surface, a number of consecutive electrode strips are configured to assume electric potentials of sequentially increasing absolute value. A field plate covers the most of a separation between a pair of adjacent electrode strips and is isolated from the most of said separation by an electric insulation layer. A bias potential is coupled to said field plate so that attracts surface-generated charge carriers.
摘要:
According to an example embodiment, a semiconductor radiation detector assembly is provided, the semiconductor radiation detector assembly comprising a detector chip (401) having a front side for receiving radiation and a back side; and a flexible substrate (402) comprising a center portion having its front side attached to the back side of the detector chip and a plurality of strips extending from the center portion and bent to protrude away from the detector chip, wherein said flexible substrate comprises a plurality of conductive tracks that extend on a surface of said strips from said center portion towards lateral ends of said strips for electrical coupling and mechanical attachment to one of a plurality of contact pins (408), and wherein the detector chip is electrically coupled to at least one of said conductive tracks.
摘要:
A semiconductor radiation detector comprises a bulk layer of semiconductor material. On a first side of said bulk layer is an arrangement of field electrodes and a collection electrode (103) for collecting radiation-induced signal charges from said bulk layer. A radiation shield (402) exists on a second side of said bulk layer, opposite to said first side, which radiation shield selectively overlaps the location of said collection electrode.