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1.发明授权
公开(公告)号：EP0663112B1
公开(公告)日：1999-02-03
申请号：EP93911113.4
申请日：1993-05-06
CPC分类号： H01S5/18308 , H01S5/0421 , H01S5/0425 , H01S5/18316 , H01S5/18333 , H01S5/18341 , H01S5/18369 , H01S5/18394 , H01S5/2063 , H01S5/2205 , H01S5/2224 , H01S2301/166
摘要： Vertical-cavity surface-emitting lasers (VCSELs) are disclosed having various intra-cavity structures to achieve low series resistance, high power efficiencies, and TEM mode radiation. In one embodiment of the invention, a VCSEL comprises a laser cavity disposed between an upper mirror (70) and a lower mirror (20). The laser cavity comprises upper spacer (50) and lower spacer (30) layers sandwiching an active region (40). A stratified electrode (60) for conducting electrical current to the active region (40) is disposed between the upper mirror (70) and the upper spacer (50). The stratified electrode (60) comprises a plurality of alternating high and low doped layers (62, 63, 64) for achieving low series resistance without increasing the optical absorption. The VCSEL further comprises a current aperture as a disk shaped region formed in the stratified electrode for suppressing higher mode radiation. The current aperture is formed by reducing or eliminating the conductivity of the annular surrounding region. In another embodiment, a metal contact layer having an optical aperture is formed within the upper mirror of the VCSEL. The optical aperture blocks the optical field in such a manner that it eliminates higher transverse mode lasing.
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公开(公告)号：EP0898347A1
公开(公告)日：1999-02-24
申请号：EP98115197.0
申请日：1993-05-06
CPC分类号： H01S5/18308 , H01S5/0421 , H01S5/0425 , H01S5/18316 , H01S5/18333 , H01S5/18341 , H01S5/18369 , H01S5/18394 , H01S5/2063 , H01S5/2205 , H01S5/2224 , H01S2301/166
摘要： Vertical-cavity surface-emitting lasers (VCSELs) are disclosed having various intra-cavity structures to achieve low series resistance, high power efficiencies, and TEM oo mode radiation. In one embodiment of the invention, a VCSEL comprises a laser cavity disposed between an upper and a lower mirror. The laser cavity comprises upper and lower spacer layers sandwiching an active region. A stratified electrode for conducting electrical current to the active region is disposed between the upper mirror and the upper spacer. The stratified electrode comprises a plurality of alternating high and low doped layers for achieving low series resistance without increasing the optical absorption. The VCSEL further comprises a current aperture as a disk shaped region formed in the stratified electrode for suppressing higher mode radiation. The current aperture is formed by reducing or eliminating the conductivity of the annular surrounding regions. In another embodiment, a metal contact layer having an optical aperture is formed within the upper mirror of the VCSEL. The optical aperture blocks the optical field in such a manner that it eliminates higher transverse mode lasing.
摘要翻译： 公开了具有各种腔内结构以实现低串联电阻，高功率效率和TEMoo模式辐射的垂直腔表面发射激光器（VCSEL）。 在本发明的一个实施例中，VCSEL包括设置在上反射镜和下反射镜之间的激光腔。 激光腔包括夹持有源区的上间隔层和下间隔层。 用于将电流传导到有源区的分层电极设置在上反射镜和上间隔件之间。 分层电极包括多个交替的高和低掺杂层，用于实现低串联电阻而不增加光吸收。 VCSEL还包括作为形成在分层电极中的用于抑制更高模式辐射的盘形区域的电流孔径。 通过减小或消除环形周围区域的导电性来形成电流孔径。 在另一个实施例中，在VCSEL的上反射镜内形成具有光学孔的金属接触层。 光学孔径以这样的方式阻挡光场，从而消除较高的横模激光。
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