METHOD FOR PROCESSING SILICON BASE MATERIAL, ARTICLE PROCESSED BY THE METHOD, AND PROCESSING APPARATUS
    1.
    发明公开
    METHOD FOR PROCESSING SILICON BASE MATERIAL, ARTICLE PROCESSED BY THE METHOD, AND PROCESSING APPARATUS 审中-公开
    一种用于处理硅基材料,根据加工对象和处理装置的处理过程

    公开(公告)号:EP2154269A1

    公开(公告)日:2010-02-17

    申请号:EP08752549.9

    申请日:2008-05-09

    申请人: Quantum 14 KK

    摘要: In a state where a silicon base material (1) is used as an anode, a fine platinum member (2) is used as a cathode, and an electrolyte solution (4) is arranged between the anode and the cathode, anodic oxidation is performed in constant current mode under the conditions where porous formation mode and electrolytic polishing mode coexist. The platinum member (2) is fitted in the silicon base material (1) with silicon elution, and processes such as hole making, cutting, single-side pressing are performed. Since the silicon base material can be processed at a room temperature with small energy, the crystal quality of the processing surface is not deteriorated. Thus, efficient and highly accurate processing can be performed without using a mechanical method, which consumes much material in conventional processes such as cutting of solar cell silicon base material, and without using laser whose energy unit cost is high, and furthermore, without leaving a crystal damage on a processed surface.

    摘要翻译: 在将硅基材(1)被用作阳极的状态下,一细的铂构件(2)被用作阴极,以及电解液(4)在阳极和阴极之间布置,阳极氧化进行 在多孔形成模式和电解抛光模式共存的条件下,恒定电流方式。 铂构件(2)被装配在硅基底材料(1)与有机硅系洗脱,和过程:如孔加工,切割,单侧按压被执行。 由于硅基材料可在室温下,用小的能量进行加工,加工面的结晶品质不劣化。 因此,高效率和高精度的处理可以在不使用机械方法,其中在常规方法消耗大量材料进行:如太阳能电池的硅基底材料的切削,并且不使用激光器,其能量的单位成本高,并且更进一步,而不留 上的加工面的晶体损伤。

    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE AND INFORMATION DISPLAY
    2.
    发明公开
    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE AND INFORMATION DISPLAY 审中-公开
    LICHTEMITTITELENDES ELEMENT,LICHTEMITTITELENDES BAUELEMENT UND INFORMATIONSANZEIGE

    公开(公告)号:EP1791185A1

    公开(公告)日:2007-05-30

    申请号:EP04771122.1

    申请日:2004-07-27

    IPC分类号: H01L33/00

    摘要: A light-emitting device has a structure in which a semiconductor or a conductive substrate having a bottom electrode, a layer for generating hot electrons, quasi-ballistic electrons or ballistic electrons, a luminous layer, and a semitransparent surface electrode are deposited, or a structure in which a holes supply layer is provided between the luminous layer and the semitransparent surface electrode having the same structure. The light-emitting device realizes highly efficient light emission in a range from infrared rays to ultraviolet ray with smaller driving current than that of conventional injection-type or intrinsic EL devices.

    摘要翻译: 发光器件具有其中沉积具有底部电极,产生热电子的层,准弹道电子或弹道电子的半导体或导电衬底,发光层和半透明表面电极的结构,或者 在具有相同结构的发光层和半透明表面电极之间设置有孔供给层的结构。 发光装置在比常规注射型或本征EL器件的驱动电流小的红外线到紫外线的范围内实现高效发光。