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    NANOSTRUCTURED UNITS FORMED INSIDE A SILICON MATERIAL AND THE MANUFACTURING PROCESS TO PERFORM THEM THEREIN
    3.
    发明公开
    NANOSTRUCTURED UNITS FORMED INSIDE A SILICON MATERIAL AND THE MANUFACTURING PROCESS TO PERFORM THEM THEREIN 审中-公开
    内的硅料形的纳米结构单元和方法用于形成IT

    公开(公告)号：EP2997604A2

    公开(公告)日：2016-03-23

    申请号：EP14795861.5

    申请日：2014-05-13

    申请人： SEGTON ADVANCED TECHNOLOGY SAS

    发明人： KUZNICKI, Zbigniew ,  MEYRUEIS, Patrick

    IPC分类号： H01L31/18

    摘要： The invention bears on elementary nanoscale units nanostructured-formed inside a silicon material and the manufacturing process to implement them. Each elementary nanoscale unit is created by means of a limited displacement of two Si atoms outside a crystal elementary unit. A localized nanoscale transformation of the crystalline matter gets an unusual functionality by focusing in it a specific physical effect as is a highly useful additional set of electron energy levels that is optimized for the solar spectrum conversion to electricity. An adjusted energy set allows a low-energy secondary electron generation in a semiconductor, preferentially silicon, material for use especially in very-high efficiency all-silicon light-to-electricity converters. The manufacturing process to create such transformations in a semiconductor material bases on a local energy deposition like ion implantation or electron (γ,X) beam irradiation and suitable thermal treatment and is industrially easily available.

    摘要翻译： 初等纳米级单元的本发明的熊硅材料和制造过程，以实现它们的内部纳米结构形成的。 每个基本单元的纳米级由两个Si原子的晶体基本单元外的有限位移的方式创建的。 的结晶物质的本地化纳米尺度变换通过聚焦在其上的特定的物理效果是非常有用的附加的一组电子能级的并用于太阳光谱转换为电能优化获取有关此一个不寻常的功能。 经调整的能量集在半导体，优选硅，为在爱尤其非常高效率的全硅光 - 电转换器使用的材料允许低能二次电子产生。 在制造过程中创建像离子注入或电子束照射和适当热处理的局部能量沉积的半导体材料的碱搜索转换和在工业上容易获得。

    GROUPED NANOSTRUCTURED UNITS SYSTEM FORMING A METAMATERIAL WITHIN THE SILICON AND THE MANUFACTURING PROCESS TO FORM AND ARRANGE THEM THEREIN
    4.
    发明公开
    GROUPED NANOSTRUCTURED UNITS SYSTEM FORMING A METAMATERIAL WITHIN THE SILICON AND THE MANUFACTURING PROCESS TO FORM AND ARRANGE THEM THEREIN 审中-公开
    从分组NANOSTRUCTURED系统单位用于形成及其形成和布置在硅中的超材料和方法THEREIN

    公开(公告)号：EP2997603A2

    公开(公告)日：2016-03-23

    申请号：EP14795863.1

    申请日：2014-05-13

    申请人： SEGTON ADVANCED TECHNOLOGY SAS

    发明人： KUZNICKI, Zbigniew ,  MEYRUEIS, Patrick

    IPC分类号： H01L31/028

    摘要： This invention concerns a grouped nanostructured unit system forming a metamaterial within the silicon and the manufacturing process to arrange them therein in an optimal manner. The nanostructured units are grouped and conditioned in an optimal arrangement inside the silicon material. The process comprises the modification of the elementary crystal unit together with the stress field, the electric field and a heavy impurity doping in order to form a superlattice of nanostructured units grouped in an optimal arrangement so as to improve the efficiency of the light-to-electricity conversion by means of efficient use of the kinetic energy of hot electrons and efficient collection of all electrons generated within the converter.

    摘要翻译： 本发明涉及一种纳米结构的组合形成unitSystem来在硅和制造过程中的超材料将它们在其中的最佳方式安排。 纳米结构化的单元分组，且在所述有机硅材料内最佳排列条件。 该过程的应力场，电场和重杂质，以便掺杂一起包括的基本晶体单元的修改，以在最佳排列分组在纳米结构化单元的超晶格，以便提高光 - 效率 通过有效地利用热电子并且所述转换器内产生的所有的电子的有效收集的动能的手段电转换。