公开(公告)号：EP2999005A4

公开(公告)日：2016-04-20

申请号：EP14803901

申请日：2014-05-29

申请人： KANEKA CORP

发明人： ADACHI DAISUKE

IPC分类号： H01L31/0224

CPC分类号： H01L31/02168 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/0747 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/50

摘要： A solar cell of the present invention includes a collecting electrode (7) extending in one direction on a first principal surface of a photoelectric conversion section (50). The collecting electrode (7) includes a first electroconductive layer (71) and a second electroconductive layer (72) in this order from the photoelectric conversion section (50) side, and further includes an insulating layer (9) provided with openings between the first electroconductive layer (71) and the second electroconductive layer (72). The first electroconductive layer (71) is covered with the insulating layer (9), and the second electroconductive layer (72) is partially in conduction with the first electroconductive layer (71) through the openings of the insulating layer (9). The first electroconductive layer (71) has non-central portions (Lo) within a range of d 2 - d I from both ends of the first electroconductive layer, respectively, and a central portion (Lc) between the two non-central portions, in a direction orthogonal to an extending direction of the first electroconductive layer (71). A density S C of openings of the insulating layer on the first electroconductive layer at the central portion (Lc) is higher than a density So of openings of the insulating layer on the first electroconductive layer at the non-central portion (Lo).

摘要翻译： 本发明的太阳能电池包括在光电转换部（50）的第一主面上沿一个方向延伸的集电极（7）。 集电极（7）从光电转换部（50）侧依次包括第一导电层（71）和第二导电层（72），还包括绝缘层（9），第一导电层（71）和第二导电层 导电层（71）和第二导电层（72）。 第一导电层（71）被绝缘层（9）覆盖，并且第二导电层（72）通过绝缘层（9）的开口部分地与第一导电层（71）导通。 第一导电层（71）分别具有从第一导电层两端的d 2 -d 1范围内的非中心部分（Lo）和两个非中心部分之间的中心部分（Lc） 在与第一导电层（71）的延伸方向正交的方向上。 中心部分（Lc）上的第一导电层上的绝缘层的开口的密度S C高于非中心部分（Lo）处的第一导电层上的绝缘层的开口的密度So。

公开(公告)号：EP2999005A1

公开(公告)日：2016-03-23

申请号：EP14803901.9

申请日：2014-05-29

申请人： Kaneka Corporation

发明人： ADACHI, Daisuke

IPC分类号： H01L31/0224

CPC分类号： H01L31/02168 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/0747 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/50

摘要： A solar cell of the present invention includes a collecting electrode (7) extending in one direction on a first principal surface of a photoelectric conversion section (50). The collecting electrode (7) includes a first electroconductive layer (71) and a second electroconductive layer (72) in this order from the photoelectric conversion section (50) side, and further includes an insulating layer (9) provided with openings between the first electroconductive layer (71) and the second electroconductive layer (72). The first electroconductive layer (71) is covered with the insulating layer (9), and the second electroconductive layer (72) is partially in conduction with the first electroconductive layer (71) through the openings of the insulating layer (9). The first electroconductive layer (71) has non-central portions (Lo) within a range of d 2 - d I from both ends of the first electroconductive layer, respectively, and a central portion (Lc) between the two non-central portions, in a direction orthogonal to an extending direction of the first electroconductive layer (71). A density S C of openings of the insulating layer on the first electroconductive layer at the central portion (Lc) is higher than a density So of openings of the insulating layer on the first electroconductive layer at the non-central portion (Lo).

摘要翻译： 本发明的太阳能电池包括在光电转换部分（50）的第一主表面上沿一个方向延伸的收集电极（7）。 集电极（7）从光电转换部（50）侧开始依次具有第一导电层（71）和第二导电层（72），并且还包括绝缘层（9），该绝缘层在第一导电层 导电层（71）和第二导电层（72）。 第一导电层（71）被绝缘层（9）覆盖，第二导电层（72）通过绝缘层（9）的开口部分地与第一导电层（71）导通。 第一导电层71具有分别位于第一导电层两端的d2-d1范围内的非中心部分（Lo）和两个非中心部分之间的中心部分（Lc），a 垂直于第一导电层（71）的延伸方向。 中心部分（Lc）处的第一导电层上的绝缘层的开口的密度SC（Lc）高于非中心部分处的第一导电层上的绝缘层的开口的密度（Lo）（Lo）。

公开(公告)号：EP2833391A4

公开(公告)日：2015-04-22

申请号：EP13768368

申请日：2013-03-29

申请人： TEIJIN LTD

发明人： IMAMURA TETSUYA ,  TOMIZAWA YUKA ,  IKEDA YOSHINORI

IPC分类号： H01L21/20 ,  H01L21/208 ,  H01L21/225 ,  H01L21/336 ,  H01L29/786 ,  H01L31/04 ,  H01L31/18

CPC分类号： H01L21/0257 ,  H01L21/02436 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0259 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02694 ,  H01L21/2225 ,  H01L21/2254 ,  H01L21/2257 ,  H01L21/268 ,  H01L27/1292 ,  H01L29/66757 ,  H01L29/78666 ,  H01L29/78696 ,  H01L31/02167 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1872 ,  H01L31/208

摘要： A first aspect of the present invention provides a method for producing a semiconductor laminate comprising a substrate having formed thereon a silicon layer with small surface unevenness and high continuity. The method of the first aspect of the present invention for producing a semiconductor laminate having a substrate 10 and a sintered silicon particle layer 5 on the substrate comprises (a) coating a silicon particle dispersion containing a dispersion medium and silicon particles dispersed in the dispersion medium, on a substrate 10 to form a silicon particle dispersion layer 1, (b) drying the silicon particle dispersion layer 1 to form a green silicon particle layer 2, (c) stacking a light-transmitting layer 3 on the green silicon particle layer, and (d) irradiating the green silicon particle layer 2 with light through the light-transmitting layer 3 to sinter the silicon particles constituting the green silicon particle layer 2, and thereby form a sintered silicon particle layer 5.

公开(公告)号：EP2833391A1

公开(公告)日：2015-02-04

申请号：EP13768368.6

申请日：2013-03-29

申请人： Teijin Limited

发明人： IMAMURA, Tetsuya ,  TOMIZAWA, Yuka ,  IKEDA, Yoshinori

IPC分类号： H01L21/20 ,  H01L21/208 ,  H01L21/225 ,  H01L21/336 ,  H01L29/786 ,  H01L31/04

CPC分类号： H01L21/0257 ,  H01L21/02436 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0259 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02694 ,  H01L21/2225 ,  H01L21/2254 ,  H01L21/2257 ,  H01L21/268 ,  H01L27/1292 ,  H01L29/66757 ,  H01L29/78666 ,  H01L29/78696 ,  H01L31/02167 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1872 ,  H01L31/208 ,  Y02E10/547 ,  Y02P70/521

摘要： A first aspect of the present invention provides a method for producing a semiconductor laminate comprising a substrate having formed thereon a silicon layer with small surface unevenness and high continuity.
The method of the first aspect of the present invention for producing a semiconductor laminate having a substrate 10 and a sintered silicon particle layer 5 on the substrate comprises (a) coating a silicon particle dispersion containing a dispersion medium and silicon particles dispersed in the dispersion medium, on a substrate 10 to form a silicon particle dispersion layer 1, (b) drying the silicon particle dispersion layer 1 to form a green silicon particle layer 2, (c) stacking a light-transmitting layer 3 on the green silicon particle layer, and (d) irradiating the green silicon particle layer 2 with light through the light-transmitting layer 3 to sinter the silicon particles constituting the green silicon particle layer 2, and thereby form a sintered silicon particle layer 5.

摘要翻译： 本发明的第一方面提供一种用于生产半导体层叠体，其包括一个基板在其上的具有小的表面凹凸和高连续性的硅树脂层，具有形成的方法。 本发明的第一方面的用于制造具有在基板上包括：（a）涂布在硅颗粒分散体包含分散在分散介质中的分散介质和硅粒子的基板10和一个烧结硅粒子层5的半导体叠层体的方法 ，在基板10上以形成硅颗粒分散液层1，（b）干燥所述硅颗粒分散液层1，以形成绿色硅颗粒层上层叠透光层3绿色硅颗粒层2，（c）中， 和（d）通过所述光透射层3照射光的绿色硅颗粒层2以烧结构成绿色硅颗粒层2中的硅颗粒，从而形成烧结硅粒子层5

公开(公告)号：EP2689473A2

公开(公告)日：2014-01-29

申请号：EP12728117.8

申请日：2012-03-22

申请人： SEGTON Advanced Technology

发明人： Kuznicki, Zbigniew ,  Meyrueis, Patrick

IPC分类号： H01L31/18

CPC分类号： H01L31/035254 ,  B82Y20/00 ,  B82Y40/00 ,  H01L21/26 ,  H01L21/26506 ,  H01L21/26513 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035245 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/03762 ,  H01L31/03845 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/50 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： This invention aims to reduce and preferably to cancel the carrier collection limit effect in order to considerably increase the conversion efficiency. This improvement is achieved by a suitable modification of the amorphized layer thickness or even by discontinuities separating amorphizing beams or amorphized nanopellets.

公开(公告)号：EP2184789A4

公开(公告)日：2011-07-27

申请号：EP08792102

申请日：2008-08-01

申请人： SHARP KK

发明人： TACHIBANA SHINSUKE ,  NAKANO TAKANORI

IPC分类号： H01L31/18 ,  G01R31/26 ,  H01L31/20

CPC分类号： H01L31/208 ,  H01L31/046 ,  Y02E10/50 ,  Y02P70/521

公开(公告)号：EP2343173A1

公开(公告)日：2011-07-13

申请号：EP11150198.7

申请日：2011-01-05

申请人： Mitsuboshi Diamond Industrial Co., Ltd.

发明人： Akai, Toshio ,  Okamoto, Keitaro ,  Soyama, Masanobu

IPC分类号： B28D1/22 ,  B28D5/00 ,  H01L21/00 ,  H01L31/18 ,  H01L27/142

CPC分类号： B28D5/00 ,  H01L21/67092 ,  H01L31/046 ,  H01L31/188 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T83/0304

摘要： There is provided a groove machining tool supported in a holder and caused to move together with the holder in relative fashion along a scheduled scribe line over an integrated thin-film solar cell substrate to form a groove. The groove machining tool includes a tool body supported in the holder, and a blade tip part formed in a distal part of the tool body. The blade tip part includes a blade extending along a direction intersecting a direction of movement of the tool, at a first end along the direction of movement of the tool. The blade is tilted backward from the direction of movement of the tool in relation to a direction orthogonal to the direction of movement of the groove tool, as viewed from a bottom face of the blade tip part.

摘要翻译： 提供了一种支撑在保持器中的凹槽加工工具，并且使其与保持器一起沿着整体式薄膜太阳能电池基板上的预定切割线一起移动以形成凹槽。 凹槽加工工具包括支撑在保持器中的工具主体和形成在工具主体的远侧部分中的刀片尖部。 叶片尖端部分包括在沿着工具的移动方向的第一端沿着与工具的移动方向相交的方向延伸的叶片。 从叶片顶端部的底面观察，叶片相对于与槽工具的移动方向正交的方向从工具的移动方向向后方倾斜。

公开(公告)号：EP2184789A1

公开(公告)日：2010-05-12

申请号：EP08792102.9

申请日：2008-08-01

申请人： Sharp Kabushiki Kaisha

发明人： TACHIBANA, Shinsuke ,  NAKANO, Takanori

IPC分类号： H01L31/18

CPC分类号： H01L31/208 ,  H01L31/046 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for manufacturing a thin film photoelectric conversion module comprising the steps of: (A) forming a plurality of divided strings by dividing a string, in which thin film photoelectric conversion elements provided by sequentially laminating a first electrode layer, a photoelectric conversion layer and a second electrode layer on the surface of an insulating substrate are electrically connected in series, into a plurality of strings by dividing grooves, electrically insulating and separating the first electrode layer and the second electrode layer one from the other and extending in a serial connection direction; and (B) performing reverse biasing by applying a reverse bias voltage to each of thin film photoelectric conversion elements of the divided string.

摘要翻译： 1。一种薄膜光电转换模块的制造方法，其特征在于，包括：（A）通过分割形成多个分割串，其中，通过将第一电极层，光电转换层和第二电极层依次层叠而成的薄膜光电转换元件， 绝缘基板表面上的第二电极层通过分隔槽串联电连接成多个串，使第一电极层和第二电极层彼此电绝缘和分离，并沿串联方向延伸 ; 和（B）通过向分开的串的每个薄膜光电转换元件施加反向偏置电压来执行反向偏置。

公开(公告)号：EP1410433B1

公开(公告)日：2005-03-23

申请号：EP02787170.6

申请日：2002-07-16

申请人： SAES GETTERS S.p.A.

发明人： AMIOTTI, Marco

IPC分类号： H01L21/332

CPC分类号： B81C1/00285 ,  C23C14/025 ,  C23C16/0281 ,  H01L21/3221 ,  H01L21/6835 ,  H01L31/18 ,  H01L31/208 ,  H01L2221/6835 ,  H01L2221/68377 ,  H01L2924/16152 ,  Y02E10/50 ,  Y02P70/521

摘要： It is described in different embodiments thereof a support (10; 20) for manufacturing microelectronic, microoptoelectronic or micromechanical devices requiring gas absorption for their correct operation, comprising a mechanical supporting base (11; 21), a layer (13) of a gas absorbing material on the base and a layer for temporary protection of the gas absorbing material, that is removed during the manufacture of the devices.

公开(公告)号：EP0236938A3

公开(公告)日：1989-11-15

申请号：EP87103093.8

申请日：1987-03-04

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： Juergens, Wilfried, Dipl.-Phys. ,  Günzel, Eberhardt, Dr.

IPC分类号： H01L31/02 ,  H01L31/18

CPC分类号： H01L31/208 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/03921 ,  Y02E10/50 ,  Y02P70/521

摘要： Bei der Herstellung von mit Fingerelektrodenstrukturen (7) versehenen Dünnschichtsolarzellen aus amorphem Si­lizium werden die durch Fehlstellen im amorphen Si­lizium (4) verursachten Kurzschlüsse zwischen Grund- und Deckelektroden dadurch vermieden, daß zwischen der Grundelektrodenschicht (2) und der Deckelektrodenschicht (6) zumindest im Bereich der Fingerelektrodenstruktur (7) vor oder nach der Herstellung der aktiven amorphen Siliziumschichten (4) eine Isolationszone (11) durch zu­sätzliches Erzeugen einer Oxidschicht oder durch Wegätzen der Grundelektrodenschicht (2) erzeugt wird. Das Verfahren wird verwendet bei der Herstellung von großflächigen Solarzellen aus amorphem Silizium.