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    THYRISTOR AND METHOD FOR MANUFACTURING SAME
    1.
    发明公开
    THYRISTOR AND METHOD FOR MANUFACTURING SAME 审中-实审

    公开(公告)号：EP4421876A1

    公开(公告)日：2024-08-28

    申请号：EP22877674.6

    申请日：2022-09-28

    Applicant: Shindengen Electric Manufacturing Co., Ltd.

    Inventor： ENDO, Kanae ,  INOUE, Tadashi ,  SHIBATA, Yukihiro

    IPC: H01L29/74

    CPC classification number: H01L29/0696 ,  H01L29/1016 ,  H01L29/102 ,  H01L29/744

    Abstract: There is provided a thyristor with desensitized gate sensitivity. The invention includes: a first P-type semiconductor layer; a first N-type semiconductor layer disposed in contact with the first P-type semiconductor layer; a second P-type semiconductor layer disposed in contact with the first N-type semiconductor layer; a second N-type semiconductor layer disposed in contact with the second P-type semiconductor layer; a third P-type semiconductor layer that is disposed in contact with the second P-type semiconductor layer and has an impurity concentration higher than that of the second P-type semiconductor layer; a gate electrode; a cathode electrode; and a fourth P-type semiconductor layer that is in contact with each of the second P-type semiconductor layer and the second N-type semiconductor layer and has an impurity concentration higher than that of the second P-type semiconductor layer. The third P-type semiconductor layer and the fourth P-type semiconductor layer are separated from each other by the second P-type semiconductor layer, and the third P-type semiconductor layer and the second N-type semiconductor layer are separated from each other by the second P-type semiconductor layer.

    WIDE GAP SEMICONDUCTOR DEVICE
    2.
    发明公开
    WIDE GAP SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：EP4036990A1

    公开(公告)日：2022-08-03

    申请号：EP22162506.4

    申请日：2017-11-13

    Applicant: Shindengen Electric Manufacturing Co., Ltd.

    Inventor： NAKAMURA, Shunichi

    IPC: H01L29/78

    Abstract: A wide gap semiconductor device has: a drift layer using wide gap semiconductor material being a first conductivity type; a well region being a second conductivity type and provided in the drift layer; a source region provided in the well region; a gate contact region provided in the well region and electrically connected to a gate pad; and a Zener diode region provided in the well region and provided between the source region and the gate contact region.

    SEMICONDUCTOR SWITCH CONTROL CIRCUIT AND SWITCHING POWER SUPPLY DEVICE
    4.
    发明公开
    SEMICONDUCTOR SWITCH CONTROL CIRCUIT AND SWITCHING POWER SUPPLY DEVICE 审中-公开

    公开(公告)号：EP3767810A1

    公开(公告)日：2021-01-20

    申请号：EP18909619.1

    申请日：2018-03-16

    Applicant: Shindengen Electric Manufacturing Co., Ltd.

    Inventor： MIYAZAWA, Wataru ,  HISADA, Shigeru

    IPC: H02M1/08 ,  H02M3/155 ,  H03K17/16

    Abstract: A semiconductor switch control circuit 12 according to the present invention includes: a pulse signal generating part 13 configured to generate a pulse signal which becomes a time reference for performing an ON/OFF control of a semiconductor switch 6; a drive current generating part 14 configured to generate a drive current based on the pulse signal which the pulse signal generating part 13 generates and to supply the drive current to a gate electrode of the semiconductor switch 6; a current detecting part 18 configured to detect a drain current or a source current of the semiconductor switch 6; and a drive current control part 19 configured to have a function of controlling a drive current which the drive current generating part 14 generates based on the pulse signal which the pulse signal generating part 13 generates and the current which the current detecting part 18 detects. The present invention provides a semiconductor switch control circuit which minimally causes a phenomenon that a semiconductor switch or a circuit part around the semiconductor switch is broken due to self-oscillation and an erroneous operation of the semiconductor switch caused by the self-oscillation even at timing that a large switching current flows such as at the time of starting a power source or at the time that an overload is applied.

    WIDE-GAP SEMICONDUCTOR DEVICE
    5.
    发明公开
    WIDE-GAP SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：EP3726586A1

    公开(公告)日：2020-10-21

    申请号：EP17934558.2

    申请日：2017-12-14

    Applicant: Shindengen Electric Manufacturing Co., Ltd.

    Inventor： NAKAMURA, Shunichi

    IPC: H01L29/78 ,  H01L29/12

    Abstract: A wide gap semiconductor device has: a drift layer 12 using a first conductivity type wide gap semiconductor material; a well region 20, being a second conductivity type and provided in the drift layer 12; a polysilicon layer 150 provided on the well region 20; an interlayer insulating film 65 provided on the polysilicon layer 150; a gate pad 120 provided on the interlayer insulating film 65; and a source pad 110 electrically connected to the polysilicon layer 150.

    WIDE GAP SEMICONDUCTOR DEVICE
    6.
    发明公开
    WIDE GAP SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：EP3712952A1

    公开(公告)日：2020-09-23

    申请号：EP17931576.7

    申请日：2017-11-13

    Applicant: Shindengen Electric Manufacturing Co., Ltd.

    Inventor： NAKAMURA Shunichi

    IPC: H01L29/06 ,  H01L29/12 ,  H01L29/78

    Abstract: A wide gap semiconductor device has: a drift layer 12 using wide gap semiconductor material being a first conductivity type; a plurality of well regions 20 being a second conductivity type and formed in the drift layer 12; a polysilicon layer 150 provided on the well regions 20 and on the drift layer 12 between the well regions 20; an interlayer insulating film 65 provided on the polysilicon layer 150; a gate pad 120 provided on the interlayer insulating film 65; and a source pad 110 electrically connected to the polysilicon layer 150.

    ELECTRONIC DEVICE
    9.
    发明公开
    ELECTRONIC DEVICE 审中-公开

    公开(公告)号：EP3584829A1

    公开(公告)日：2019-12-25

    申请号：EP17797220.5

    申请日：2017-02-20

    Applicant: Shindengen Electric Manufacturing Co., Ltd.

    Inventor： MORINAGA Yuji ,  UMEDA Soichiro

    IPC: H01L23/48 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18

    Abstract: An electronic device has a substrate 5, a first electric element 91 provided on a first conductor layer 71, a second electric element 92 provided on the first electric element 91, and a connector 50 having a base end part 45 provided on a second conductor layer 72 and a head part 40 provided on a front surface electrode 92a of the second electric element 92 via a conductive adhesive 75. An area of the base end part 45 placed on the second conductor layer 72 is larger than an area of the head part 40 placed on the second electric element 92. The base end part 45 is located at a side of the substrate 5 compared with the head part 40, and a gravity center position of the connector 50 is at a side of the base end part 45 of the connector 50.

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