公开(公告)号：EP1723682A1

公开(公告)日：2006-11-22

申请号：EP05711173.4

申请日：2005-03-03

申请人： Solibro AB

发明人： MALMSTRÖM, Jonas ,  STOLT, Lars

IPC分类号： H01L31/0248 ,  H01L31/042 ,  H01L31/0272

CPC分类号： H01L31/0322 ,  H01L31/022425 ,  H01L31/056 ,  Y02E10/52 ,  Y02E10/541 ,  Y02P70/521

摘要： The present invention relates to a thin film solar cell and a method of manufacturing such cells. In particular the invention relates to the use of a composite back contact (314) in Cu(In,Ga)Se2 (CIGS) based thin film solar cells with thin absorber layers. The composite back contact (314) is provided between the substrate (105) and the absorber (115) and comprises: a back reflector layer (311) that enhance the reflectance at the absorber/composite back contact interface; and at least a contact layer that contact layer (310, 313) that ensures suitable electrical properties of the back contact with respect to the absorber; and/or a conductance layer (312) that ensures low sheet resistance for the in-plane current flow.

公开(公告)号：EP1620888A1

公开(公告)日：2006-02-01

申请号：EP04731270.7

申请日：2004-05-05

申请人： Solibro AB

发明人： PLATZER BJÖRKMAN, Charlotte ,  KESSLER, John ,  STOLT, Lars

IPC分类号： H01L21/363 ,  H01L31/042 ,  H01L31/072

CPC分类号： H01L31/0322 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： The present invention relates to thin-film solar cells of the CIGS-type. A characteristic feature of the invention is the use of two integrally formed buffer layers, a first ALD Zn(O,S) buffer layer (7) on top of the CIGS-layer (3) and a second ALD ZnO-buffer layer (8) on top of the first (7) buffer layer. Both buffer layers are deposited in the same process step using ALD (atom layer deposition). The invention also relates to a method of producing the cell and a process line for manufacturing of the cell structure.

公开(公告)号：EP1721339A1

公开(公告)日：2006-11-15

申请号：EP05722187.1

申请日：2005-03-04

申请人： Solibro AB

发明人： STOLT, Lars ,  KESSLER, John

IPC分类号： H01L31/04 ,  H01L31/032

CPC分类号： H01L31/18 ,  C23C14/0623 ,  C23C14/548 ,  C23C14/56 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： An in-line production apparatus and a method for composition control of copper indium gallium diselenide (CIGS) solar cells fabricated by a co-evaporation deposition process. The deposition conditions are so that a deposited Cu-excessive overall composition is transformed into to a Cu-deficient overall composition, the final CIGS film. Substrates with a molybdenum layer move through the process chamber with constant speed. The transition from copper rich to copper deficient composition on a substrate is detected by using sensors which detect a physical parameter related to the transition. A preferred embodiment sensors are provided that detect the composition of elements in the deposited layer. A controller connected to the sensors adjusts the fluxes from the evaporant sources in order provide a CIGS layer with uniform composition and thickness over the width of the substrate.

摘要翻译： 通过共蒸发沉积工艺制造的在线生产设备和用于组成控制铜铟镓二硒化物（CIGS）太阳能电池的方法。 沉积条件使得沉积的Cu过量的整体组合物转化为Cu缺陷的总组合物，即最终的CIGS膜。 具有钼层的衬底以恒定速度移动通过处理室。 通过使用检测与过渡相关的物理参数的传感器来检测从底物上铜富集到铜缺乏组成的过渡。 提供了一种优选实施例的传感器，其检测沉积层中的元件的组成。 连接到传感器的控制器调节来自蒸发源的通量，以便提供在衬底的宽度上具有均匀组成和厚度的CIGS层。