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公开(公告)号：EP4044259A1
公开(公告)日：2022-08-17
申请号：EP21751493.4
申请日：2021-04-27
发明人： ZHANG, Shude , ZHAO, Baoxing , NI, Zhichun , LIAN, Weifei , WEI, Qingzhu , FU, Xin
IPC分类号： H01L31/0376 , H01L31/072
摘要： The application relates to a high-efficiency heterojunction cell structure and a preparation method thereof. The high-efficiency heterojunction cell structure includes a bottom electrode, a back transparent conductive film layer, an n-type doped amorphous silicon layer, a back intrinsic amorphous silicon layer, a back intrinsic amorphous silicon buffer layer, an n-type monocrystal silicon wafer, a front intrinsic amorphous silicon buffer layer, a front intrinsic amorphous silicon layer, a p-type doped amorphous silicon layer, a front transparent conductive film layer and a top electrode which are sequentially arranged from bottom to top. The high-efficiency heterojunction cell structure and the preparation method thereof greatly improve the definition of an amorphous silicon/silicon substrate interface, improve the passivation effect, and further improve the open circuit voltage of the cell and the filling factor related to the open circuit voltage.
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公开(公告)号：EP3246954B1
公开(公告)日：2020-06-03
申请号：EP15877668.2
申请日：2015-12-08
发明人： WEI, Qingzhu , LU, Junyu , LIAN, Weifei , NI, Zhichun
IPC分类号： H01L31/18 , H01L31/0216 , H01L21/228
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公开(公告)号：EP3355365A1
公开(公告)日：2018-08-01
申请号：EP15904675.4
申请日：2015-12-31
发明人： NI, Zhichun , WEI, Qingzhu , WU, Chenyang , LU, Junyu , LIAN, Weifei
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , Y02P70/521
摘要： Provided are a silicon wafer surface passivation method and an N-type bifacial cell preparation method based on the silicon wafer surface passivation method. The silicon wafer surface passivation method comprises: processing a silicon wafer surface, so as to remove an oxide layer, borosilicate glass and/or phosphosilicate glass on the silicon wafer surface; in the irradiation of ultraviolet, blowing the processed silicon wafer surface by using ozone gas, so as to form silicon oxide of a first preset thickness on the processed silicon wafer surface, or soaking the silicon wafer in ozone-containing water so as to form silicon oxide of a first preset thickness on the processed silicon wafer surface. In the irradiation of ultraviolet, silicon oxide can be formed on the silicon wafer surface by blowing the silicon wafer surface by using ozone gas or soaking the silicon wafer in ozone-containing water, which can be complemented in a normal temperature, thereby greatly reducing costs; and the method is particularly suitable for large-scale industrialized production.
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4.发明公开
公开(公告)号：EP3312989A1
公开(公告)日：2018-04-25
申请号：EP15895511.2
申请日：2015-12-29
发明人： NI, Zhichun , CAI, Xia , WEI, Qingzhu , XU, Zhixiang , HU, Leizhen , ZHANG, Caixia
IPC分类号： H02S30/10 , H01L31/048
CPC分类号： H01L31/048 , H02S30/10 , Y02E10/50
摘要： Disclosed is a lightweight solar cell module with high mechanical load resistance, comprising a solar cell string (1), EVA layers (2) stacked on two sides of the solar cell string, a front panel glass layer (3) stacked on one of the EVA layers, a back panel (4) stacked on the other of the EVA layers, frames (7) for clamping the back panel and the front panel glass layer, and a junction box (6) mounted on the back panel for connecting the solar cell strings and external circuits, wherein the front panel glass layer is made of super clear patterned glass, and at least one reinforcing rib (5) is mounted inside the frames. On the one hand, arranging at least one reinforcing rib between the back panel and the frames can effectively improve the capability of mechanical load resistance of the cell module, and on the other hand, setting the front panel glass to be super clear patterned glass can beneficially reduce the weight of the cell module, and improve the photoelectric conversion efficiency thereof.
摘要翻译： 本发明公开了一种具有高机械负载电阻的轻质太阳能电池模块，其包括太阳能电池串（1），堆叠在太阳能电池串的两侧上的EVA层（2），堆叠在太阳能电池串中的一个上的前面板玻璃层 EVA层，堆叠在另一个EVA层上的背板（4），用于夹紧背板和前板玻璃层的框架（7），以及安装在背板上用于连接太阳能电池板的接线盒（6） 单元串和外部电路，其中前面板玻璃层由超清晰图案化玻璃制成，并且至少一个加强肋（5）安装在框架内部。 一方面，在背面板和框架之间设置至少一个加强筋可以有效提高电池模块的机械负载抵抗能力，另一方面，将前面板玻璃设置为超清晰的图案化玻璃罐 有利地减小电池模块的重量，并且提高其光电转换效率。
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公开(公告)号：EP3246954A1
公开(公告)日：2017-11-22
申请号：EP15877668.2
申请日：2015-12-08
发明人： WEI, Qingzhu , LU, Junyu , LIAN, Weifei , NI, Zhichun
IPC分类号： H01L31/18 , H01L31/068 , H01L31/0352 , H01L31/0216 , H01L21/228
摘要： Provided is a manufacturing method for an N-type double-sided battery. The method comprises the following steps: S1, performing texturing treatment; S2, evenly coating a boron source on the upper surface of an N-type silicon wafer in a spin coating or silk-screen printing manner, and conducting boron diffusion in a furnace tube; S3, manufacturing a mask; S4, conducting phosphorus diffusion on the lower surface of the N-type silicon wafer, and forming a high-low-junction structure on the lower surface; S5, removing phosphorosilicate glass and the mask that is manufactured in step S3; S6, manufacturing a passivation anti-reflection film made from aluminum oxide and silicon nitride on the surface of the diffused boron, and manufacturing a silicon nitride passivation anti-reflection film on the surface of the diffused phosphorus; and S7, manufacturing an electrode. The manufacturing method for the N-type double-sided battery is simple in process, and effectively improves the efficiency of the battery. In addition, also provided is an N-type double-sided battery. A passivation layer manufacturing method for the N-type double-sided battery is a low-temperature process, and does not damage a PN junction.
摘要翻译： 提供了一种用于N型双面电池的制造方法。 该方法包括以下步骤：S1，进行纹理化处理; S2，将硼源以旋涂或丝网印刷的方式均匀涂布在N型硅晶片的上表面，并在炉管内进行硼扩散; S3，制造面具; S4，在N型硅晶片的下表面进行磷扩散，并在下表面形成高低结结构; S5，去除磷硅酸盐玻璃和步骤S3中制造的掩模; S6，在扩散后的硼表面制备由氧化铝和氮化硅制成的钝化防反射膜，在扩散后的磷表面制备氮化硅钝化防反射膜; 和S7，制造电极。 该N型双面电池的制造方法工艺简单，有效地提高了电池的效率。 另外，还提供了一种N型双面电池。 用于N型双面电池的钝化层制造方法是低温工艺，并且不会损坏PN结。
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