摘要:
The surface acoustic wave functional element comprises a semiconductor layer provided on a piezoelectric substrate or a piezoelectric film substrate and makes use of interaction between a surface acoustic wave propagating on the substrate and electrons in the substrate layer, but has the semiconductor layer disposed outside above the propagation path for propagating a surface acoustic wave, comprises a plurality of grating electrodes perpendicularly above and to the propagation path and moreover the semiconductor layer comprises an active layer and a buffer layer lattice-matching thereto. By use of this surface acoustic wave functional element, a surface acoustic wave amplifier capable of providing a high amplification gain at a practical low voltage, a surface acoustic wave convolver having a higher efficiency than ever or the like are offered.
摘要:
A surface acoustic wave device including a substrate made of a lithium tetraborate single crystal (Li₂B₄O₇) whose cut and propagating direction are determined such that Euler cut angles (ψ, θ, φ) are ψ=+5°∼-5°, θ=9°∼29° and 32°∼86° and φ=85°∼95°, and an electrode structure formed on a surface of the substrate to realize a natural single-phase unidirectional transducer property together with an anisotropy of said substrate. A lithium tetraborate substrate having cut angles of (0°, 51°, 90°) shows an ideal NSPUDT and a lithium tetraborate substrate having cut angles of (0°, 78°, 90°) reveals a zero temperature coefficient of delay. A directionality reversed electrode structure or a directionality corrected electrode structure may be advantageously used.
摘要:
In an surface acoustic wave transducer including a substrate made of a piezoelectric material, an input side IDT structure having positive and negative electrodes arranged in an interdigit manner and floating electrodes arranged between successive positive and negative electrodes, and an output side IDT structure having positive and negative electrodes arranged in an interdigit manner and floating electrodes arranged between successive positive and negative electrodes, the electrodes of the input and output side IDT structures are arranged such that a surface acoustic wave propagates in one direction, distances between corresponding tracks in the input and output side IDT structures are linearly changed and lengths of these tracks are changed in accordance with a predetermined window function.
摘要:
A surface acoustic wave functional element includes a piezoelectric substrate or a multi-layered piezoelectric substrate (1) having a large electromechanical coupling coefficient, semiconductor layers formed on the substrate having a large electron mobility and including an active layer (3) and a buffer layer lattice-matched to the active layer, and further an input electrode (4) and an output electrode (5) formed on both sides of the semiconductor layers. The element attains a large amplification gain at a low voltage. The surface acoustic wave functional element is useful for a transmitting/receiving circuit in a high frequency portion of a mobile communication appliance.
摘要:
In order to provide a transducer suitable for an anisotropic substrate having the NSPUDT property, on the anisotropic piezoelectric substrate being cut to have the NSPUDT property, there is formed a transducer structure having an exciting electrode structure (21) and a reflector structure (22). When λ is a wavelength of a fundamental surface acoustic wave, said exciting electrode structure (21) includes a positive electrode (23) having a plurality of electrode fingers arranged at a pitch λ and a negative electrode (24) having at least one electrode finger interdigitally arranged between said electrode fingers of the positive electrode with a center distance of λ/2. The reflector transducer (22) includes a plurality of electrode fingers arranged with a center distance of λ/2, and a distance L g between said exciting electrode structure (21) and the reflector structure (22) is set to L g = (2n+1)λ/4 (n being a positive integer).