SURFACE ACOUSTIC WAVE FUNCTIONAL DEVICE
    4.
    发明公开
    SURFACE ACOUSTIC WAVE FUNCTIONAL DEVICE 失效
    FUNKTIONSVORRICHTUNG MIT AKUSTISCHENOBERFLÄCHENWELLEN

    公开(公告)号:EP0913935A1

    公开(公告)日:1999-05-06

    申请号:EP97930844.2

    申请日:1997-07-18

    IPC分类号: H03H9/145 H03H9/72

    CPC分类号: H03H9/02976 G06G7/195

    摘要: The surface acoustic wave functional element comprises a semiconductor layer provided on a piezoelectric substrate or a piezoelectric film substrate and makes use of interaction between a surface acoustic wave propagating on the substrate and electrons in the substrate layer, but has the semiconductor layer disposed outside above the propagation path for propagating a surface acoustic wave, comprises a plurality of grating electrodes perpendicularly above and to the propagation path and moreover the semiconductor layer comprises an active layer and a buffer layer lattice-matching thereto. By use of this surface acoustic wave functional element, a surface acoustic wave amplifier capable of providing a high amplification gain at a practical low voltage, a surface acoustic wave convolver having a higher efficiency than ever or the like are offered.

    摘要翻译: 表面声波功能元件包括设置在压电基板或压电薄膜基板上的半导体层,并且利用在基板上传播的表面声波与基板层中的电子之间的相互作用,但是半导体层设置在 用于传播表面声波的传播路径包括垂直于传播路径上方的多个光栅电极,此外,半导体层包括与其晶格匹配的有源层和缓冲层。 通过使用这种表面声波功能元件,提供了能够在实际的低电压下提供高放大增益的表面声波放大器,具有比以往更高效率的表面声波卷积器等。

    Surface acoustic wave device
    5.
    发明公开

    公开(公告)号:EP0704966A3

    公开(公告)日:1997-08-27

    申请号:EP95306380.7

    申请日:1995-09-12

    IPC分类号: H03H9/145

    CPC分类号: H03H9/14505 H03H9/02543

    摘要: A surface acoustic wave device including a substrate made of a lithium tetraborate single crystal (Li₂B₄O₇) whose cut and propagating direction are determined such that Euler cut angles (ψ, θ, φ) are ψ=+5°∼-5°, θ=9°∼29° and 32°∼86° and φ=85°∼95°, and an electrode structure formed on a surface of the substrate to realize a natural single-phase unidirectional transducer property together with an anisotropy of said substrate. A lithium tetraborate substrate having cut angles of (0°, 51°, 90°) shows an ideal NSPUDT and a lithium tetraborate substrate having cut angles of (0°, 78°, 90°) reveals a zero temperature coefficient of delay. A directionality reversed electrode structure or a directionality corrected electrode structure may be advantageously used.

    Surface acoustic wave unidirectional transducer having floating electrodes
    6.
    发明公开
    Surface acoustic wave unidirectional transducer having floating electrodes 失效
    具有浮动电极的表面声波波形单向传感器

    公开(公告)号:EP0530041A3

    公开(公告)日:1993-08-18

    申请号:EP92307866.1

    申请日:1992-08-28

    IPC分类号: H03H9/145

    CPC分类号: H03H9/14505

    摘要: In an surface acoustic wave transducer including a substrate made of a piezoelectric material, an input side IDT structure having positive and negative electrodes arranged in an interdigit manner and floating electrodes arranged between successive positive and negative electrodes, and an output side IDT structure having positive and negative electrodes arranged in an interdigit manner and floating electrodes arranged between successive positive and negative electrodes, the electrodes of the input and output side IDT structures are arranged such that a surface acoustic wave propagates in one direction, distances between corresponding tracks in the input and output side IDT structures are linearly changed and lengths of these tracks are changed in accordance with a predetermined window function.

    ELASTIC SURFACE WAVE FUNCTIONAL DEVICE AND ELECTRONIC CIRCUIT USING THE ELEMENT
    7.
    发明公开
    ELASTIC SURFACE WAVE FUNCTIONAL DEVICE AND ELECTRONIC CIRCUIT USING THE ELEMENT 失效
    设备技术柔性表面波与电子电路利用这样的装置

    公开(公告)号:EP0810726A1

    公开(公告)日:1997-12-03

    申请号:EP96902454.6

    申请日:1996-02-16

    摘要: A surface acoustic wave functional element includes a piezoelectric substrate or a multi-layered piezoelectric substrate (1) having a large electromechanical coupling coefficient, semiconductor layers formed on the substrate having a large electron mobility and including an active layer (3) and a buffer layer lattice-matched to the active layer, and further an input electrode (4) and an output electrode (5) formed on both sides of the semiconductor layers. The element attains a large amplification gain at a low voltage. The surface acoustic wave functional element is useful for a transmitting/receiving circuit in a high frequency portion of a mobile communication appliance.

    摘要翻译: 表面声波的功能元件包括具有压电基片或多层压电基板(1)上形成具有大的电子迁移率和包括活性层的基片大的机电耦合系数,半导体层(3)和一个缓冲层 晶格匹配的有源层,以及进一步在输入电极(4)和输出电极(5)形成在半导体层的bothsides。 该元件达到在低电压大的放大增益。 的弹性表面波功能元件,用于发送是有用的/在移动通信设备的高频部分接收电路。

    SURFACE ACOUSTIC WAVE CONVERTER AND ACOUSTIC WAVE FILTER USING THE SAME
    8.
    发明公开
    SURFACE ACOUSTIC WAVE CONVERTER AND ACOUSTIC WAVE FILTER USING THE SAME 失效
    AKUSTISCHEROBERFLÄCHENKONVERTERUND AKUSTISCHES WELLENFILTER DAMIT

    公开(公告)号:EP0802627A1

    公开(公告)日:1997-10-22

    申请号:EP96937539.3

    申请日:1996-11-08

    IPC分类号: H03H9/145 H03H9/64

    摘要: In order to provide a transducer suitable for an anisotropic substrate having the NSPUDT property, on the anisotropic piezoelectric substrate being cut to have the NSPUDT property, there is formed a transducer structure having an exciting electrode structure (21) and a reflector structure (22). When λ is a wavelength of a fundamental surface acoustic wave, said exciting electrode structure (21) includes a positive electrode (23) having a plurality of electrode fingers arranged at a pitch λ and a negative electrode (24) having at least one electrode finger interdigitally arranged between said electrode fingers of the positive electrode with a center distance of λ/2. The reflector transducer (22) includes a plurality of electrode fingers arranged with a center distance of λ/2, and a distance L g between said exciting electrode structure (21) and the reflector structure (22) is set to L g = (2n+1)λ/4 (n being a positive integer).

    摘要翻译: 为了提供适合于具有NSPUDT特性的各向异性基板的换能器,在被切割为具有NSPUDT特性的各向异性压电基片上形成具有激发电极结构(21)和反射器结构(22)的换能器结构, 。 当λ是基音表面波的波长时,所述激励电极结构(21)包括具有以间距λ布置的多个电极指的正极(23)和具有至少一个电极指的负极(24) 以正中心距离为λ/ 2的方式布置在正电极的所述电极指之间。 反射器换能器(22)包括以中心距离λ/ 2布置的多个电极指,并且所述激励电极结构(21)和反射器结构(22)之间的距离Lg被设置为Lg =(2n + 1 )λ/ 4(n为正整数)。