公开(公告)号：EP0960440A1

公开(公告)日：1999-12-01

申请号：EP98901632.0

申请日：1998-01-19

申请人： ABB RESEARCH LTD.

发明人： HERMANSSON, Willy ,  BIJLENGA, Bo ,  RAMBERG, Lennart ,  ROTTNER, Kurt ,  ZDANSKY, Lennart ,  HARRIS, Christopher ,  BAKOWSKI, Mietek ,  SCHÖNER, Adolf ,  LUNDBERG, Nils ,  ÖSTLING, Mikael ,  DAHLQUIST, Fanny

IPC分类号： H01L21 ,  H01L29

CPC分类号： H01L29/1608 ,  H01L29/6606 ,  H01L29/872

摘要： A Schottky diode of SiC has a substrate layer, a drift layer (2) and emitter layer regions (3) formed in the drift layer. A metal layer (4) is making an ohmic contact to the emitter layer regions and Schottky contact to the drift layer. A depletion of the drift layer region between two adjacent emitter layer regions is allowed in the blocking state of the diode making said two adjacent p-type emitter layer regions form a continuous depleted region (9) therebetween in this state.