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27 条记录 (耗时 0.014 秒)

    SEMICONDUCTOR DEVICE IN SILICON CARBIDE
    1.
    发明公开
    SEMICONDUCTOR DEVICE IN SILICON CARBIDE 失效
    半导体器件不同于硅

    公开(公告)号：EP0750789A1

    公开(公告)日：1997-01-02

    申请号：EP96901171.0

    申请日：1996-01-17

    申请人： ABB RESEARCH LTD.

    发明人： HERMANSSON, Willy ,  RAMBERG, Lennart ,  SIGURD, Dag

    IPC分类号： H01L29 ,  H01L21

    CPC分类号： H01L21/263 ,  H01L21/0445 ,  H01L21/7602 ,  H01L29/1608 ,  H01L29/6606 ,  Y10S438/931

    摘要： The invention relates to a method in which proton or ion implantation is used for restructuring a silicon carbide region from being conductive to being resistive and wherein this implantation method is used for manufacturing a semiconductor device which comprises a p-n junction where both the p-conductive and the n-conductive layers are designed as doped layers of silicon carbide (SiC), whereby the implantation method is used for at least one of the steps passivation of a silicon carbide surface of the device with a semi-insulating layer, definition of the area of the p-n junction during manufacture, termination of the edges of the p-n junction by means of a semi-insulating layer, creation of a positive edge angle at the edge of the p-n junction, and insulation of different devices from one another during manufacture of a plurality of devices on one and the same wafer of filicon carbide, wherein the invention also relates to the implantation method proper.

    A DEVICE FOR HEAT TREATMENT OF OBJECTS
    5.
    发明授权
    A DEVICE FOR HEAT TREATMENT OF OBJECTS 失效
    设备对于对象的热处理

    公开(公告)号：EP0865518B1

    公开(公告)日：2001-07-11

    申请号：EP96933696.5

    申请日：1996-10-01

    申请人： ABB RESEARCH LTD. ,  Okmetic Limited

    发明人： KORDINA, Olle ,  HERMANSSON, Willy ,  TUOMINEN, Marko

    IPC分类号： C30B29/36 ,  C30B29/38 ,  C30B35/00

    CPC分类号： C30B25/10 ,  C30B23/02 ,  C30B29/36 ,  C30B29/38

    摘要： The present invention is directed to a device for heat treatment of objects. It comprises a susceptor for receiving an object in the form of a substrate and a gas mixture fed to the substrate for epitaxial growth of a crystal on said substrate by Chemical Vapor Deposition. The susceptor includes an inner wall and an outer, circumferential wall enclosing the inner wall at a distance therefrom. The inner wall defines a chamber for receiving the object. An enclosed space is formed between the inner and outer wall, and is filled with a powder. The powder is made of SiC, a group III nitride or alloys thereof. Also, for heating the susceptor and thereby also the object, a Rf-field radiator is provided surrounding the susceptor.

    A METHOD FOR PRODUCING A SILICON CARBIDE BIPOLAR DEVICE AND A SILICON CARBIDE BIPOLAR DEVICE
    6.
    发明公开
    A METHOD FOR PRODUCING A SILICON CARBIDE BIPOLAR DEVICE AND A SILICON CARBIDE BIPOLAR DEVICE 失效
    一种制造碳化硅双极型器件和碳化硅双极型器件的方法

    公开(公告)号：EP0931336A1

    公开(公告)日：1999-07-28

    申请号：EP97945131.0

    申请日：1997-09-25

    申请人： ABB RESEARCH LTD.

    发明人： HERMANSSON, Willy

    IPC分类号： H01L21 ,  H01L29

    摘要： A method for producing a bipolar semiconductor device having a first layer (3) doped according to a first doping type, said first layer being adapted to have minority charge carriers injected thereinto from a second layer (5) of the device of an opposite doping type to that of the first layer in a forward conducting state of the device, comprises a step of epitaxially growing said first layer during which at least one region (4) of said first layer is provided with a constitution implying a lower lifetime of said minority charge carriers therein than in other parts of said first layer by incorporating impurities in said region during the epitaxial growth thereof.

    摘要翻译： 一种用于制造具有根据第一掺杂类型掺杂的第一层（3）的双极半导体器件的方法，所述第一层适于从相反掺杂类型的器件的第二层（5）注入少数电荷载流子 与器件的正向导通状态下的第一层的厚度相比，包括外延生长所述第一层的步骤，在所述步骤期间，所述第一层的至少一个区域（4）被提供具有较低寿命的所述少数电荷 通过在其外延生长期间在所述区域中掺杂杂质而在所述第一层的其他部分中形成载流子。

    BATTERY ENERGY STORAGE SYSTEM WITH SHORT CIRCUIT PROTECTION, AND METHOD
    9.
    发明公开
    BATTERY ENERGY STORAGE SYSTEM WITH SHORT CIRCUIT PROTECTION, AND METHOD 有权
    有短路保护和方法电力蓄电池系统

    公开(公告)号：EP2517327A1

    公开(公告)日：2012-10-31

    申请号：EP09799634.2

    申请日：2009-12-22

    申请人： ABB Research Ltd

    发明人： TINGLOW, Fredrik ,  SVENSSON, Jan ,  BACKMAN, Magnus ,  HERMANSSON, Willy ,  HOSINI, Falah

    IPC分类号： H02J7/00

    CPC分类号： H02J7/0031 ,  H02J7/0026 ,  Y10T307/685

    摘要： The invention relates to a battery energy storage system comprising a control unit (7a-c, 12a-c, 17) and a plurality of battery units (2a-c). The battery units (2a-c) are arranged in series, and each battery unit (2a-c) comprises at least one semiconductor switch (23) and at least one battery module (22) comprising a plurality of battery cells (22). Each battery module (22) is connected in series with a respective semiconductor switch (23), and the control unit (7a-c, 12a-c, 17) is operatively connected to the at least one semiconductor switch and adapted to control the at least one semiconductor switch (23) of every battery unit (2a-c).

    A DC POWER SOURCE FOR A HIGH VOLTAGE POWER APPARATUS
    10.
    发明公开
    A DC POWER SOURCE FOR A HIGH VOLTAGE POWER APPARATUS 有权
    WECHSELSTROMQUELLEFÜREINE HOCHSPANNUNGSVERSORGUNG

    公开(公告)号：EP2510600A1

    公开(公告)日：2012-10-17

    申请号：EP09765132.7

    申请日：2009-12-10

    申请人： ABB Research Ltd

    发明人： PAPASTERGIOU, Konstantinos ,  HERMANSSON, Willy ,  DEMETRIADES, Georgios

    IPC分类号： H02J3/18 ,  H02J3/36 ,  H02J7/34 ,  H02J15/00 ,  H02M1/32

    CPC分类号： H02M1/32 ,  H02J3/1835 ,  H02M2001/0077 ,  Y02E40/30 ,  Y10T307/685

    摘要： The invention relates to a dc power source (3) for a high voltage power apparatus (1), the dc power source (3) comprising one or more strings (4a-c) including a plurality of dc power source units connected in series, and switches (7, 9, 11, 13) configured to connect and disconnect said strings (4a-c). The switches (7, 9, 11, 13) are solid-state switches distributed among the power source units of each string (4a-c), and all solid-state switches (7, 9, 11, 13) in the string (4a-c) are arranged so that they are turned on and off simultaneously. Each switch (7, 9, 11, 13) is connected in parallel with a first controllable semiconductor (16) in a first direction and connected in parallel with a second controllable semiconductor (20) in a second direction which is opposite to the first direction, and the dc power source (3) comprises a control unit (21) configured to bypass a failed switch (7, 9, 11, 13) by triggering the forward biased of the first (16) or second (20) controllable semiconductor connected to the failed switch (7, 9, 11, 13) in case a fault in the switch (7, 9, 11, 13) is detected

    摘要翻译： 一种用于高电压电力设备的直流电源，所述直流电源包括包括串联连接的多个直流电源单元的一个或多个串，以及被配置为连接和断开所述串的开关。 这些开关是分布在每个串的电源单元之间的固态开关，并且串中的所有固态开关被布置成使得它们同时导通和截止。 每个开关在第一方向上与第一可控半导体并联连接，并且在与第一方向相反的第二方向上与第二可控半​​导体并联连接，并且直流电源包括配置成绕过故障的控制单元 在检测到开关故障的情况下，通过触发连接到故障开关的第一或第二可控半​​导体的正向偏置来切换。