公开(公告)号：EP0146975A2

公开(公告)日：1985-07-03

申请号：EP84200830.2

申请日：1984-06-09

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： Chan, Albert ,  Fitzpatrick Mark ,  Bosnyak, Robert J. ,  Tsui, Cyrus ,  Goddard, Don

IPC: G11C29/00

CPC classification number: G11C29/025 ,  G11C17/14 ,  G11C29/02 ,  G11C29/50 ,  G11C2029/5006

Abstract: Test circuitry is included in a PROM memory for detecting shorts between bit lines and word lines and shorts or leaks in a memory cell. The circuitry enables a selected positive voltage to be applied across all memory cells in the memory so that the existence of leaky memory cells or shorts in the memory can be detected during testing. The test circuitry has no appreciable effect on the memory during normal operation of the memory.