Selective intermixing of layered structures composed of thin solid films
    1.
    发明公开
    Selective intermixing of layered structures composed of thin solid films 失效
    Selektive Verbindung von mehrschichtigen Strukturen aus festenDünnschichten。

    公开(公告)号:EP0264222A2

    公开(公告)日:1988-04-20

    申请号:EP87308868.6

    申请日:1987-10-07

    申请人: AMOCO CORPORATION

    摘要: A multilayer semiconductor structure, formed of two or more separate layers of different materials can be selectively intermixed so as to become compositionally modified, such that the distinction between the different original materials is lost, at least partially. This intermixing process employs irradiation with a pulsed or rapidly scanned laser or electron beam, generally at ambient conditions of temperature and pressure, at energy levels which avoid physical damage to the layered structure. The intermixing may be more complete when multiple pulses from the laser or electron beam are employed.

    摘要翻译: 可以选择性地混合由两种或更多种不同材料分离的层形成的多层半导体结构,以便被组合地修饰,使得至少部分地损失不同原始材料之间的区别。 这种混合过程通常在温度和压力的环境条件下以脉冲或快速扫描的激光或电子束照射,其能量水平避免了对层状结构的物理损伤。 当采用来自激光或电子束的多个脉冲时,混合可能更完整。