公开(公告)号：EP0566220A3

公开(公告)日：1993-10-27

申请号：EP93201991.2

申请日：1987-12-18

申请人： APPLIED MATERIALS, INC.

发明人： Cheng, David ,  Maydan, Dan ,  Somekh, Sasson ,  Stalder, Kenneth R. ,  Andrews, Dana L. ,  Chang, Mei ,  White, John M. ,  Wong, Jerry Yuen Kui ,  Zeitlin, Vladimir J. ,  Wang, David Nin-Kou

IPC分类号： H01J37/32 ,  H01L21/306 ,  C23C16/50

CPC分类号： H01L21/67069 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

摘要： A magnetic field enhanced single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting pedestal/cathode (70,72); and a unitary wafer exchange mechanism (74) comprising wafer lift pins (79) which extend through the pedestal and a wafer clamp ring (78). The lift pins and clamp ring are moved vertically by a one-axis lift mechanism (140) to accept the wafer from a co-operating external robot blade (76), clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode (70) and a thermal conductivity-enhancing gas interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (114, 175, 176) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (81,83) of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher wich provides uniformity, directionality and selectivity at high gas pressure, operates cleanly and incorporates in-situ self-cleaning capability.

公开(公告)号：EP0339580A3

公开(公告)日：1990-11-22

申请号：EP89107484.1

申请日：1989-04-25

申请人： APPLIED MATERIALS INC.

发明人： Cheng, David ,  Maydan, Dan ,  Somekh, Sasson ,  Stalder, Kenneth R. ,  Andrews, Dana L. ,  Chang, Mei ,  White, John M. ,  Wong, Jerry Yuen Kui ,  Zeitlin, Vladimir J. ,  Wang, David Nin-Kou

IPC分类号： H01J37/32 ,  H01L21/00 ,  C23F4/00

CPC分类号： H01L21/67069 ,  H01J37/32431 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

摘要： A magnetic field enhanced vacuum single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (66 I, 67 I) (walls and gas manifold) and a cooled wafer supporting cathode (72) and a unitary wafer exchange mechanism comprising wafer lift pins (79) which extend through the pedestal (72) and a wafer clamp ring (78). The lift pins (79) and clamp ring (78) are moved vertically by a one-axis lift mechanism (140) to accept the wafer (75) from a cooperating external robot blade (76), clamp the wafer (75) to the pedestal (72) and return the wafer (75) to the blade (76). The electrode cooling combines water cooling (170, 172, 174) for the body (128) of the electrode and a thermal conductivity-­enhancing gas parallel-bowed interface between the wafer (75) and electrode (72) for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (175, 176, 178, 180) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (811, 83) of materials such as quartz are provided for surfaces such as the clamp ring (78) and gas manifold (80). The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher (60) which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

公开(公告)号：EP0272142A3

公开(公告)日：1990-09-05

申请号：EP87311195.9

申请日：1987-12-18

申请人： APPLIED MATERIALS, INC.

发明人： Cheng, David ,  Maydan, Dan ,  Somekh, Sasson ,  Stalder, Kenneth R. ,  Andrews, Dana L. ,  Chang, Mei ,  White, John M. ,  Wong, Jerry Yuen Kui ,  Zeitlin, Vladimir J. ,  Wang, David Nin-Kou

IPC分类号： H01J37/32 ,  H01L21/306 ,  C23C16/50

CPC分类号： H01L21/67069 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

摘要： A magnetic field enhanced single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting pedestal/cathode (70,72); and a unitary wafer exchange mechanism (74) comprising wafer lift pins (79) which extend through the pedestal and a wafer clamp ring (78). The lift pins and clamp ring are moved vertically by a one-axis lift mechanism (140) to accept the wafer from a co-operating external robot blade (76), clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode (70) and a thermal conductivity-enhancing gas interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (114, 175, 176) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (81,83) of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher wich provides uniformity, directionality and selectivity at high gas pressure, operates cleanly and incorporates in-situ self-cleaning capability.

公开(公告)号：EP0566220A2

公开(公告)日：1993-10-20

申请号：EP93201991.2

申请日：1987-12-18

申请人： APPLIED MATERIALS, INC.

发明人： Cheng, David ,  Maydan, Dan ,  Somekh, Sasson ,  Stalder, Kenneth R. ,  Andrews, Dana L. ,  Chang, Mei ,  White, John M. ,  Wong, Jerry Yuen Kui ,  Zeitlin, Vladimir J. ,  Wang, David Nin-Kou

IPC分类号： H01J37/32 ,  H01L21/306 ,  C23C16/50

CPC分类号： H01L21/67069 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

摘要： A magnetic field enhanced single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting pedestal/cathode (70,72); and a unitary wafer exchange mechanism (74) comprising wafer lift pins (79) which extend through the pedestal and a wafer clamp ring (78). The lift pins and clamp ring are moved vertically by a one-axis lift mechanism (140) to accept the wafer from a co-operating external robot blade (76), clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode (70) and a thermal conductivity-enhancing gas interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (114, 175, 176) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (81,83) of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher wich provides uniformity, directionality and selectivity at high gas pressure, operates cleanly and incorporates in-situ self-cleaning capability.

摘要翻译： 公开了一种磁场增强型单晶片等离子体蚀刻反应器（60）。 反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑基座/阴极（70,72）; 以及包括延伸穿过基座的晶片提升销（79）和晶片夹紧环（78）的整体晶片更换机构（74）。 提升销和夹紧环通过单轴提升机构（140）垂直移动，以从合作的外部机器人叶片（76）接收晶片，将晶片夹紧到基座并将晶片返回到叶片。 电极冷却结合了用于电极（70）的主体的水冷却和晶片和电极之间的热导率增强气体界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。 气体馈通装置（114,175,176）将冷却气体施加到RF供电的电极（72），而不会破坏气体。 为诸如夹紧环和气体歧管的表面提供诸如石英的材料的保护涂层/层（81,83）。 这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入原位自清洁能力。

公开(公告)号：EP0453867A1

公开(公告)日：1991-10-30

申请号：EP91105626.5

申请日：1991-04-09

申请人： APPLIED MATERIALS INC.

发明人： Tepman, Avi ,  Andrews, Dana L.

IPC分类号： F16K51/02 ,  F16K1/10

CPC分类号： H01L21/67126 ,  F16K1/10 ,  F16K51/02

摘要： A slit valve apparatus (10) associated with an aperture (14) in a chamber wall (12) through which a semiconductor wafer may be passed along a transfer plane (20). The apparatus (10) is characterized by a valve seat (22) which is angled relative to the transfer plane (20) and a door (28) which moves linearly along an axis (54) substantially perpendicular to the valve seat (22). All frictionally engaged parts of the slit valve assembly (10) are isolated from the interior of the chamber (48) by a bellow sleeve (46) to reduce the formation of particulates. The method is characterized by the steps of surrounding the aperture (14) with a first seating surface (24) defining a sealing plane (26) which is angularly disposed with respect to the transfer plane (20) and engaging or disengaging a second seating surface (30) with the first seating surface (24) by linearly moving the second seating surface (30) in a direction perpendicular to the sealing plane (26).

摘要翻译： 与室壁（12）中的孔（14）相关联的狭缝阀装置（10），半导体晶片可以通过所述开口（14）沿着转移平面（20）通过。 该装置（10）的特征在于一个相对于传送平面（20）成角度的阀座（22）和一个大致垂直于阀座（22）的轴线（54）线性运动的门（28）。 狭缝阀组件（10）的所有摩擦接合部分通过波纹管套筒（46）与腔室（48）的内部隔离以减少微粒的形成。 该方法的特征在于，围绕孔（14）的步骤包括限定相对于传送平面（20）成角度地设置的密封平面（26）的第一安置表面（24），并且接合或分离第二安置表面 （30）通过沿垂直于密封平面（26）的方向直线移动第二座面（30）而具有第一座面（24）。

公开(公告)号：EP0566220B1

公开(公告)日：1997-04-02

申请号：EP93201991.2

申请日：1987-12-18

申请人： APPLIED MATERIALS, INC.

发明人： Cheng, David ,  Maydan, Dan ,  Somekh, Sasson ,  Stalder, Kenneth R. ,  Andrews, Dana L. ,  Chang, Mei ,  White, John M. ,  Wong, Jerry Yuen Kui ,  Zeitlin, Vladimir J. ,  Wang, David Nin-Kou

IPC分类号： H01J37/32 ,  H01L21/306 ,  C23C16/50

CPC分类号： H01L21/67069 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

公开(公告)号：EP0339580B1

公开(公告)日：1995-02-22

申请号：EP89107484.1

申请日：1989-04-25

申请人： APPLIED MATERIALS, INC.

发明人： Cheng, David ,  Maydan, Dan ,  Somekh, Sasson ,  Stalder, Kenneth R. ,  Andrews, Dana L. ,  Chang, Mei ,  White, John M. ,  Wong, Jerry Yuen Kui ,  Zeitlin, Vladimir J. ,  Wang, David Nin-Kou

IPC分类号： H01J37/32 ,  H01L21/00 ,  C23F4/00

CPC分类号： H01L21/67069 ,  H01J37/32431 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

公开(公告)号：EP0272142B1

公开(公告)日：1994-09-07

申请号：EP87311195.9

申请日：1987-12-18

申请人： APPLIED MATERIALS, INC.

发明人： Cheng, David ,  Maydan, Dan ,  Somekh, Sasson ,  Stalder, Kenneth R. ,  Andrews, Dana L. ,  Chang, Mei ,  White, John M. ,  Wong, Jerry Yuen Kui ,  Zeitlin, Vladimir J. ,  Wang, David Nin-Kou

IPC分类号： H01J37/32 ,  H01L21/306 ,  C23C16/50

CPC分类号： H01L21/67069 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

公开(公告)号：EP0453867B1

公开(公告)日：1994-08-10

申请号：EP91105626.5

申请日：1991-04-09

申请人： APPLIED MATERIALS, INC.

发明人： Tepman, Avi ,  Andrews, Dana L.

IPC分类号： F16K51/02 ,  F16K1/10

CPC分类号： H01L21/67126 ,  F16K1/10 ,  F16K51/02

公开(公告)号：EP0339580A2

公开(公告)日：1989-11-02

申请号：EP89107484.1

申请日：1989-04-25

申请人： APPLIED MATERIALS INC.

发明人： Cheng, David ,  Maydan, Dan ,  Somekh, Sasson ,  Stalder, Kenneth R. ,  Andrews, Dana L. ,  Chang, Mei ,  White, John M. ,  Wong, Jerry Yuen Kui ,  Zeitlin, Vladimir J. ,  Wang, David Nin-Kou

IPC分类号： H01J37/32 ,  H01L21/00 ,  C23F4/00

CPC分类号： H01L21/67069 ,  H01J37/32431 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

摘要： A magnetic field enhanced vacuum single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (66 I, 67 I) (walls and gas manifold) and a cooled wafer supporting cathode (72) and a unitary wafer exchange mechanism comprising wafer lift pins (79) which extend through the pedestal (72) and a wafer clamp ring (78). The lift pins (79) and clamp ring (78) are moved vertically by a one-axis lift mechanism (140) to accept the wafer (75) from a cooperating external robot blade (76), clamp the wafer (75) to the pedestal (72) and return the wafer (75) to the blade (76). The electrode cooling combines water cooling (170, 172, 174) for the body (128) of the electrode and a thermal conductivity-­enhancing gas parallel-bowed interface between the wafer (75) and electrode (72) for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (175, 176, 178, 180) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (811, 83) of materials such as quartz are provided for surfaces such as the clamp ring (78) and gas manifold (80). The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher (60) which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

摘要翻译： 公开了一种磁场增强真空单晶片等离子体蚀刻反应器（60）。 反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 包括加热的阳极表面（66I，67I）（壁和气体歧管）和冷却的晶片支撑阴极（72）的温度控制反应器表面和包括延伸穿过基座（72）的晶片升降销（79）的整体晶片交换机构 ）和晶片夹环（78）。 提升销（79）和夹紧环（78）通过单轴提升机构（140）垂直移动，以从配合的外部机器人叶片（76）接收晶片（75），将晶片（75）夹紧到 基座（72）并将晶片（75）返回到叶片（76）。 电极冷却结合用于电极主体（128）的水冷（170,172,174）和晶片（75）与电极（72）之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却 尽管施加到电极的高功率密度。 气体馈通装置（175,176,178,180）将冷却气体施加到RF供电的电极（72），而不会破坏气体。 为诸如夹紧环（78）和气体歧管（80）的表面提供诸如石英的材料的保护涂层/层（811,83）。 这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器（60），其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。