公开(公告)号：EP2147452A2

公开(公告)日：2010-01-27

申请号：EP08735395.9

申请日：2008-04-28

申请人： Leybold Optics GmbH

发明人： GEISLER, Michael ,  MERZ, Thomas ,  RÖDER, Mario

IPC分类号： H01J37/32 ,  H01L21/677 ,  H01L21/00 ,  C23C14/56

CPC分类号： H01J37/32568 ,  C23C16/4587 ,  C23C16/54 ,  H01J37/32009 ,  H01J37/32743 ,  H01J37/32788 ,  H01J2237/022 ,  H01L21/67005

摘要： Disclosed is a reactor for treating flat substrates, comprising a vacuum chamber (11) and a process chamber (9). A first electrode (5) and a counter electrode (7) which form two opposite walls of the process chamber are provided for generating a plasma. The counter electrode can accommodate the substrate (3). The reactor further comprises means for introducing (19, 23, 25) and evacuating gaseous material into and/or from process chamber, an inlet and outlet for the vacuum chamber, and a mechanism (41, 43) for varying the relative distance between the electrodes, a first relatively great distance being used when the process chamber is loaded and discharged and a second relatively short distance being used when the treatment is performed, and/or a device which is associated with the counter electrode, is used for accommodating substrates, and is designed such that the substrate is disposed at an angle alpha ranging from 0° to 90°, preferably at an angle of 1°, 3°, 5°, 7°, 9°, 11°, 13°, 15°, 17°, 20°, 25°, 30°, 40°, 45°, relative to the vertical direction at least while the treatment is performed, the substrate surface that is to be treated facing downward.

公开(公告)号：EP1030788A4

公开(公告)日：2001-02-28

申请号：EP98960161

申请日：1998-11-06

申请人： TRUSI TECHNOLOGIES LLC

发明人： SINIAGUINE OLEG

IPC分类号： H01L21/302 ,  C23C16/458 ,  C23C16/513 ,  C23C16/54 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/677 ,  H01L21/687 ,  H05H1/46 ,  H01J37/32

CPC分类号： H01L21/67017 ,  C23C16/4584 ,  C23C16/513 ,  C23C16/54 ,  H01J37/32743 ,  H01J37/32788 ,  H01J2237/20228 ,  H01J2237/31701 ,  H01L21/67745 ,  H01L21/67796 ,  H01L21/68707

摘要： To move an article (134) in and out of plasma (120) during plasma processing, the article (134) is rotated by a first drive (140) around a first axis (140X), and the first drive is itself rotated by a second drive (150). As a result, the article (134) enters the plasma (120) at different angles for different positions of the first axis (140X). The plasma cross section (114-0) at the level at which the plasma (120) contacts the article (134) is asymmetric so that those points on the article (134) that move at a greater linear velocity (due to being farther away from the first axis (140X) move longer distances through the plasma (120). As a result, the plasma processing time becomes more uniform for different points on the article surface. In some embodiments, two shuttles (710-1, 710-2) are provided for loading and unloading the plasma processing system. One of the shuttles (710-1) stands empty waiting to load them into the system, while the other shuttle (710-2) holds unprocessed articles (134) waiting to load them into the system. After the plasma processing terminates, the empty shuttle unloads processed articles (134) from the system, takes articles (134) away, and gets unloaded and reloaded with unprocessed articles (134). Meanwhile the other shuttle loads unprocessed articles (134) into the system and the plasma process begins. Since the plasma processing system does not wait for the first shuttle (710-1), the productivity of the system is increased.

公开(公告)号：EP0566220A3

公开(公告)日：1993-10-27

申请号：EP93201991.2

申请日：1987-12-18

申请人： APPLIED MATERIALS, INC.

发明人： Cheng, David ,  Maydan, Dan ,  Somekh, Sasson ,  Stalder, Kenneth R. ,  Andrews, Dana L. ,  Chang, Mei ,  White, John M. ,  Wong, Jerry Yuen Kui ,  Zeitlin, Vladimir J. ,  Wang, David Nin-Kou

IPC分类号： H01J37/32 ,  H01L21/306 ,  C23C16/50

CPC分类号： H01L21/67069 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

摘要： A magnetic field enhanced single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting pedestal/cathode (70,72); and a unitary wafer exchange mechanism (74) comprising wafer lift pins (79) which extend through the pedestal and a wafer clamp ring (78). The lift pins and clamp ring are moved vertically by a one-axis lift mechanism (140) to accept the wafer from a co-operating external robot blade (76), clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode (70) and a thermal conductivity-enhancing gas interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (114, 175, 176) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (81,83) of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher wich provides uniformity, directionality and selectivity at high gas pressure, operates cleanly and incorporates in-situ self-cleaning capability.

公开(公告)号：EP2689048B1

公开(公告)日：2017-05-03

申请号：EP12763606

申请日：2012-03-16

申请人： LG ELECTRONICS INC

发明人： SHIN JINHYOUK ,  KIM JEONGGYU ,  LEE KWANGHO ,  LEE JANGWOO ,  LEE MOONKAP ,  OH JUNGGEUN

IPC分类号： C23C16/50 ,  C23C16/44 ,  C23C16/458 ,  C23C16/513 ,  C23C16/54 ,  H01J37/32

CPC分类号： C23C16/513 ,  C23C16/458 ,  C23C16/50 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

摘要： There is disclosed a plasma enhanced chemical vapor deposition apparatus including a chamber in which plasma reaction is performed to provide a functional film to an object received therein, a pallet mechanically and electrically connected with the object, a conveyer to convey the pallet to an inside from an outside of the chamber, and a power supplier to supply an electric power to the pallet, the power supplier comprising a moving contact distant from the pallet when the pallet is conveyed and contacting with the pallet when the pallet is stopped.

摘要翻译： 公开了一种等离子体增强化学气相沉积设备，其包括：腔室，在腔室中进行等离子体反应以向其中容纳的物体提供功能膜;托盘，与物体机械和电连接;传送器，将托盘传送到内部 所述腔室的外部以及向所述货盘供应电力的电力供应器，所述电力供应器包括当所述货盘被传送时远离所述货盘的移动触点并且在所述货盘停止时与所述货盘接触。

公开(公告)号：EP2147452B1

公开(公告)日：2013-04-17

申请号：EP08735395.9

申请日：2008-04-28

申请人： Leybold Optics GmbH

发明人： GEISLER, Michael ,  MERZ, Thomas ,  RÖDER, Mario ,  BECKMANN, Rudolf

IPC分类号： H01J37/32 ,  H01L21/677 ,  H01L21/00 ,  C23C14/56 ,  C23C16/54 ,  H01L21/67 ,  C23C16/458

CPC分类号： H01J37/32568 ,  C23C16/4587 ,  C23C16/54 ,  H01J37/32009 ,  H01J37/32743 ,  H01J37/32788 ,  H01J2237/022 ,  H01L21/67005

公开(公告)号：EP2231893A1

公开(公告)日：2010-09-29

申请号：EP08851624.0

申请日：2008-11-07

申请人： Industrial Plasma Services & Technologies - IPST GmbH

发明人： VANDEN BRANDE, Pierre

IPC分类号： C23C2/36 ,  C23C14/32 ,  C23C14/54 ,  C23C14/56

CPC分类号： C23C14/16 ,  C23C2/003 ,  C23C2/36 ,  C23C14/28 ,  C23C14/32 ,  C23C14/54 ,  C23C14/542 ,  C23C14/562 ,  H01J37/321 ,  H01J37/32513 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32889 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/334

摘要： The invention relates to a method and a system for the plasma treatment of successive substrates comprising one or more steel products in which the substrates are transported, one after another, through at least one plasma treatment zone, characterized in that the electric power for generating the plasma in the treatment zone is varied according to the area of the substrate is present in this treatment zone when the substrate is running through this zone.

公开(公告)号：EP1246224A3

公开(公告)日：2008-03-19

申请号：EP02011002.9

申请日：1998-11-06

申请人： Tru-Si Technologies Inc.

发明人： Siniaguine, Oleg

IPC分类号： H01L21/00 ,  H01J37/32

CPC分类号： H01L21/67017 ,  C23C16/4584 ,  C23C16/513 ,  C23C16/54 ,  H01J37/32743 ,  H01J37/32788 ,  H01J2237/20228 ,  H01J2237/31701 ,  H01L21/67745 ,  H01L21/67796 ,  H01L21/68707

摘要： To move an article (134) in an out of plasma (12) during plasma processing, the article (134) is rotated by a first drive (140) around a first axis (140X), and the first drive is itself rotated by a second drive (150). As a result, the article (134) enters the plasma (120) at different angles for different positions of the first axis (140X). The plasma cross section (114-0) at the level at which the plasma (120) contacts the article (134) is asymmetric so that those points on the article (134) that move at a greater linear velocity (due to being farther away from the first axis (140X) move longer distances through the plasma (120). As a result, the plasma processing time becomes more uniform for different points on the article surface. In some embodiments, two shuttles (710-1, 710-2) are provided fro loading and unloading the plasma processing system. One of the shuttles (710-1) stands empty waiting to load them into the system, while the other shuttle (710-2) holds unprocessed articles (134) waiting to load them into the system. After the plasma processing terminates, the empty shuttle unloads processed articles (134) from the system, takes articles (134) away, and gets unloaded and reloaded with unprocessed articles (134). Meanwhile the other shuttle loads unprocessed articles (134) into the system and the plasma process begins. Since the plasma processing system does not wait for the first shuttle (170-1) the productivity of the system is increased.

公开(公告)号：EP0339580A2

公开(公告)日：1989-11-02

申请号：EP89107484.1

申请日：1989-04-25

申请人： APPLIED MATERIALS INC.

发明人： Cheng, David ,  Maydan, Dan ,  Somekh, Sasson ,  Stalder, Kenneth R. ,  Andrews, Dana L. ,  Chang, Mei ,  White, John M. ,  Wong, Jerry Yuen Kui ,  Zeitlin, Vladimir J. ,  Wang, David Nin-Kou

IPC分类号： H01J37/32 ,  H01L21/00 ,  C23F4/00

CPC分类号： H01L21/67069 ,  H01J37/32431 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

摘要： A magnetic field enhanced vacuum single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (66 I, 67 I) (walls and gas manifold) and a cooled wafer supporting cathode (72) and a unitary wafer exchange mechanism comprising wafer lift pins (79) which extend through the pedestal (72) and a wafer clamp ring (78). The lift pins (79) and clamp ring (78) are moved vertically by a one-axis lift mechanism (140) to accept the wafer (75) from a cooperating external robot blade (76), clamp the wafer (75) to the pedestal (72) and return the wafer (75) to the blade (76). The electrode cooling combines water cooling (170, 172, 174) for the body (128) of the electrode and a thermal conductivity-­enhancing gas parallel-bowed interface between the wafer (75) and electrode (72) for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (175, 176, 178, 180) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (811, 83) of materials such as quartz are provided for surfaces such as the clamp ring (78) and gas manifold (80). The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher (60) which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

摘要翻译： 公开了一种磁场增强真空单晶片等离子体蚀刻反应器（60）。 反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 包括加热的阳极表面（66I，67I）（壁和气体歧管）和冷却的晶片支撑阴极（72）的温度控制反应器表面和包括延伸穿过基座（72）的晶片升降销（79）的整体晶片交换机构 ）和晶片夹环（78）。 提升销（79）和夹紧环（78）通过单轴提升机构（140）垂直移动，以从配合的外部机器人叶片（76）接收晶片（75），将晶片（75）夹紧到 基座（72）并将晶片（75）返回到叶片（76）。 电极冷却结合用于电极主体（128）的水冷（170,172,174）和晶片（75）与电极（72）之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却 尽管施加到电极的高功率密度。 气体馈通装置（175,176,178,180）将冷却气体施加到RF供电的电极（72），而不会破坏气体。 为诸如夹紧环（78）和气体歧管（80）的表面提供诸如石英的材料的保护涂层/层（811,83）。 这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器（60），其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。

公开(公告)号：EP0272142A2

公开(公告)日：1988-06-22

申请号：EP87311195.9

申请日：1987-12-18

申请人： APPLIED MATERIALS, INC.

发明人： Cheng, David ,  Maydan, Dan ,  Somekh, Sasson ,  Stalder, Kenneth R. ,  Andrews, Dana L. ,  Chang, Mei ,  White, John M. ,  Wong, Jerry Yuen Kui ,  Zeitlin, Vladimir J. ,  Wang, David Nin-Kou

IPC分类号： H01J37/32 ,  H01L21/306 ,  C23C16/50

CPC分类号： H01L21/67069 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

摘要： A magnetic field enhanced single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting pedestal/cathode (70,72); and a unitary wafer exchange mechanism (74) comprising wafer lift pins (79) which extend through the pedestal and a wafer clamp ring (78). The lift pins and clamp ring are moved vertically by a one-axis lift mechanism (140) to accept the wafer from a co-operating external robot blade (76), clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode (70) and a thermal conductivity-enhancing gas interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (114, 175, 176) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (81,83) of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher wich provides uniformity, directionality and selectivity at high gas pressure, operates cleanly and incorporates in-situ self-cleaning capability.

摘要翻译： 公开了一种磁场增强型单晶片等离子体蚀刻反应器。 反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑基座/阴极（70,72）; 以及包括延伸穿过基座的晶片提升销（79）和晶片夹紧环（78）的整体晶片交换机构。 提升销和夹紧环通过单轴提升机构（140）垂直移动，以从合作的外部机器人叶片（76）接收晶片，将晶片夹紧到基座并将晶片返回到叶片。 电极冷却结合了用于电极（70）的主体的水冷却和晶片和电极之间的热导率增强气体界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。 气体供给装置（114,176）将冷却气体施加到RF供电的电极（72），而不会破坏气体。 为诸如夹紧环和气体歧管的表面提供诸如石英的材料的保护涂层/层（81,83）。 这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入原位自清洁能力。

公开(公告)号：EP1100115A4

公开(公告)日：2004-09-15

申请号：EP99957661

申请日：1999-06-28

申请人： TOKYO ELECTRON LTD

发明人： AMANO HIDEAKI

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01L21/6719 ,  H01J37/32229 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32899 ,  H05H2001/4622

摘要： A vacuum processing chamber (31) in a plasma processing unit (3A, 3B) is connected to a transfer chamber (2) and a wafer (W) is transferred from the transfer chamber (2) with the wafer aligned with a mount (4) in the vacuum processing chamber (31). The size and length of a waveguide (5) are the same for each plasma processing unit (3A, 3B) and a positional relation of the waveguide (5) with respect to transfer directions (M1, M2) of a transfer arm (61) is the same for each plasma processing unit (3A, 3B). Therefore, a positional relation of the waveguide (5) with respect to the wafer (W) placed on the mount (4) in a preset direction is the same for each plasma processing unit (3A, 3B).

摘要翻译： 等离子处理单元3A和3B的真空处理室31连接到传送室2，并且处于定位状态的晶片W从传送室2传送到真空处理室31中的安装台4.体积和 波导5的长度在等离子体处理单元3A和3B之间是相同的。 波导5与传送臂61的传送方向M1和M2的位置关系在等离子体处理单元3A和3B之间是相同的。 结果，波导5与安装在安装台4上的晶片W的预定方向的位置关系在等离子体处理单元3A和3B之间是相同的。