公开(公告)号：EP1119017A2

公开(公告)日：2001-07-25

申请号：EP01300337.1

申请日：2001-01-16

申请人： APPLIED MATERIALS, INC.

发明人： Gopalraja, Parburam ,  Fu, Jianming ,  Chen, Fusen ,  Dixit, Girish ,  Xu, Zheng ,  Athreya, Sankaram ,  Wang, Wei D. ,  Sinha, Ashok K.

IPC分类号： H01J37/34

CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/165 ,  C23C14/185 ,  C23C14/225 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： The disclosure relates to a target and magnetron for a plasma sputter reactor (10). The target (12) has an annular vault (18) facing the wafer (20) to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. Preferably, the magnetron (14) includes annular magnets (32) of opposed polarities disposed behind the two vault sidewalls (22, 24) and a small closed unbalanced magnetron of nested magnets (30) of opposed polarities scanned along the vault roof. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

摘要翻译： 本公开涉及用于等离子体溅射反应器（10）的靶和磁控管。 目标（12）具有面向要被溅射涂覆的晶片（20）的环形拱顶（18）。 位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。 优选地，磁控管（14）包括设置在两个拱顶侧壁（22,24）后面的相对极性的环形磁体（32）和沿着拱顶顶部扫描的具有相对极性的嵌套磁体（30）的小闭合不平衡磁控管。 与本发明的反应器或其他反应器的集成铜通孔填充方法包括铜的高度离子化溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，第二步更中性，更低 能够充分地溅射沉积铜以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。 前两个步骤也可以与阻隔金属一起使用。