公开(公告)号：EP1745160A1

公开(公告)日：2007-01-24

申请号：EP05748115.2

申请日：2005-05-12

申请人： APPLIED MATERIALS, INC.

发明人： KHER, Shreyas ,  NARWANKAR, Pravin ,  SHARANGAPANI, Rahul

IPC分类号： C23C16/40 ,  F22B1/00

CPC分类号： C23C16/4488 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/56 ,  Y02T50/67 ,  Y10T137/0357 ,  Y10T137/0396 ,  Y10T137/2087

摘要： Embodiments of the invention provide methods for depositing dielectric materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one example, a method includes sequentially exposing a substrate to a hafnium precursor and an oxidizing gas to deposit a hafnium oxide material thereon. In another example, a hafnium silicate material is deposited by sequentially exposing a substrate to the oxidizing gas and a process gas containing a hafnium precursor and a silicon precursor. The oxidizing gas contains water vapor formed by flowing a hydrogen source gas and an oxygen source gas through a water vapor generator.

公开(公告)号：EP1745159A2

公开(公告)日：2007-01-24

申请号：EP05760813.5

申请日：2005-05-12

申请人： APPLIED MATERIALS, INC.

发明人： MYO, Nyi Oo ,  CHOI, Kenric ,  KHER, Shreyas ,  NARWANKAR, Pravin ,  POPPE, Steve ,  METZNER, Craig R. ,  DEATEN, Paul

IPC分类号： C23C16/00

CPC分类号： C23C16/4488 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/56 ,  Y02T50/67 ,  Y10T137/0357 ,  Y10T137/0396 ,  Y10T137/2087

摘要： Embodiments of the invention provide apparatuses and methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD) . In one embodiment, a chamber contains a chamber lid (832) containing an expanding channel (834) formed within a thermally insulating material (838) either directly within the chamber lid or formed within a funnel liner attached thereon. The chamber further includes at least one conduit (841 a-d) coupled to a gas inlet within the expanding channel and positioned to provide a gas flow in a circular direction, such as a vortex, a helix or a spiral. The chamber may contain a retaining ring (819), an upper process liner (822), a lower process liner (824) or a slip valve liner (826) . Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.

摘要翻译： 本发明的实施例提供了用于在诸如原子层沉积（ALD）的气相沉积工艺期间在基板上沉积材料的装置和方法。 在一个实施例中，腔室包含腔室盖（832），腔室盖（832）包含形成于绝热材料（838）内的膨胀通道（834），所述膨胀通道直接位于腔室盖内或形成于附接于其上的漏斗衬里内。 腔室还包括至少一个导管（841a-d），其耦合到膨胀通道内的气体入口并且被定位成提供沿圆形方向（例如涡流，螺旋或螺旋）的气流。 腔室可以包含保持环（819），上部处理衬里（822），下部处理衬里（824）或滑阀衬里（826）。 内衬通常具有抛光的表面光洁度并且包含诸如熔融石英或陶瓷的绝热材料。 在替代实施例中，沉积系统包含连接到ALD室的催化水蒸汽发生器。

公开(公告)号：EP1613790A1

公开(公告)日：2006-01-11

申请号：EP04759751.3

申请日：2004-03-24

申请人： APPLIED MATERIALS, INC.

发明人： METZNER, Craig ,  KHER, Shreyas ,  KIM, Yeong, Kwan ,  ROCKLEIN, M., Noel ,  GEORGE, Steven, M.

IPC分类号： C23C16/30 ,  C23C16/34 ,  H01L21/28 ,  H01L21/285

CPC分类号： H01L21/0228 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/45531 ,  H01L21/02148 ,  H01L21/02205 ,  H01L21/02208 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/318 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.