公开(公告)号：EP3271499A1

公开(公告)日：2018-01-24

申请号：EP15885300.2

申请日：2015-03-17

申请人： Picosun Oy

发明人： KOSTAMO, Juhana ,  LEHTO, Tero ,  KÄÄRIÄ, Markku ,  HÄMEENOJA, Ossi ,  SALMINEN, Jyri

IPC分类号： C23C16/455 ,  H01L23/373 ,  H05K7/20

CPC分类号： H05K1/0203 ,  C23C16/06 ,  C23C16/40 ,  C23C16/45527 ,  C23C16/45529 ,  C23C28/042 ,  C23C28/42 ,  H01L21/4871 ,  H01L23/367 ,  H01L23/3735

摘要： A method for providing a heat conductive coating on a surface of a substrate, and a heat conductive coating, includes depositing at least one thin continuous layer of a first material by ALD; wherein the first material has a lower heat conductivity than the substrate.

公开(公告)号：EP3213341A2

公开(公告)日：2017-09-06

申请号：EP15851217.8

申请日：2015-10-16

申请人： Lotus Applied Technology, LLC

发明人： DICKEY, Eric R. ,  DANFORTH, Bryan Larson

IPC分类号： H01L21/205

CPC分类号： C23C16/45536 ,  C23C16/06 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45551 ,  C23C16/45555 ,  C23C16/545

摘要： The present disclosure relates to metal oxide barrier films and particularly to high-speed methods for depositing such barrier films. Methods are disclosed that are capable of producing barrier films with water vapor transmission rates (WVTR) below 0.1 g/(m2·day). Methods are disclosed for continuously transporting a substrate within an atomic layer deposition (ALD) reactor and performing a limited number of ALD cycles to achieve a desired WVTR.

摘要翻译： 本公开涉及金属氧化物阻挡膜，特别涉及用于沉积这种阻挡膜的高速方法。 公开了能够产生具有低于0.1g /（m2·天）的水蒸气透过率（WVTR）的阻挡膜的方法。 公开了用于在原子层沉积（ALD）反应器内连续传输衬底并且执行有限数量的ALD循环以实现期望的WVTR的方法。

公开(公告)号：EP2484801B1

公开(公告)日：2017-08-23

申请号：EP11305113.0

申请日：2011-02-07

申请人： L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE ,  Technische Universiteit Eindhoven

发明人： Lachaud, Christophe ,  Madec, Alain ,  Kessels, Wilhelmus Mathijs Marie ,  Dingemans, Gijs

IPC分类号： C23C16/40 ,  C23C16/455 ,  H01L21/314 ,  H01L21/02 ,  H01L31/0216 ,  H01L31/18

CPC分类号： C23C16/402 ,  C23C16/403 ,  C23C16/45529 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L31/02167 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

公开(公告)号：EP3151286A1

公开(公告)日：2017-04-05

申请号：EP15799245.4

申请日：2015-05-22

申请人： Kyocera Corporation

发明人： ITO, Norikazu ,  MURAO, Akira ,  KUSUHARA, Kenji

IPC分类号： H01L31/0216 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/02167 ,  C23C16/401 ,  C23C16/403 ,  C23C16/45529 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/0228 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： A solar cell element (10) of the present invention includes: a semiconductor substrate (1) including a p-type semiconductor region on one main surface thereof; a passivation layer (9) located on the p-type semiconductor region and containing aluminum oxide; and a protective layer (11) located on the passivation layer (9) and containing silicon oxide which contains hydrogen and carbon.

摘要翻译： 本发明的太阳能电池元件（10）包括：在其一个主表面上包括p型半导体区域的半导体衬底（1）; 位于p型半导体区域上并含有氧化铝的钝化层（9） 以及位于钝化层（9）上并含有含有氢和碳的氧化硅的保护层（11）。

公开(公告)号：EP3016088A4

公开(公告)日：2017-03-08

申请号：EP14848570

申请日：2014-09-30

申请人： LG CHEMICAL LTD

发明人： LEE JUNG HYOUNG ,  HAHM YUN HYE ,  LEE SANG JUN

IPC分类号： H01L51/52 ,  B32B7/02 ,  B32B27/06 ,  C23C16/30 ,  C23C16/455 ,  H01L51/56

CPC分类号： H01L51/0097 ,  C08J7/00 ,  C23C16/30 ,  C23C16/45525 ,  C23C16/45529 ,  H01L51/0034 ,  H01L51/0094 ,  H01L51/448 ,  H01L51/5253 ,  H01L51/5256 ,  H01L51/5268 ,  H01L51/5275 ,  H01L51/56 ,  H01L2251/303 ,  H01L2251/5338 ,  H01L2251/55 ,  H01L2251/558 ,  Y02E10/549 ,  Y02P70/521

摘要： Provided are a substrate for an organic electronic device (OED) and a use thereof. Provided is a substrate for a device having excellent durability by preventing interlayer delamination occurring due to internal stress in a structure in which an organic material and an inorganic material are mixed. In addition, provided is an OED having another required physical property such as excellent light extraction efficiency using the substrate, as well as the excellent durability.

公开(公告)号：EP2971229A4

公开(公告)日：2016-12-28

申请号：EP14770096

申请日：2014-03-08

申请人： BOSCH GMBH ROBERT ,  PURKL FABIAN ,  PROVINE JOHN ,  YAMA GARY ,  FEYH ANDO ,  O'BRIEN GARY

发明人： PURKL FABIAN ,  PROVINE JOHN ,  YAMA GARY ,  FEYH ANDO ,  O'BRIEN GARY

IPC分类号： C23C16/44 ,  C23C16/448

CPC分类号： C23C16/45529 ,  Y10T428/24851

公开(公告)号：EP3029175A1

公开(公告)日：2016-06-08

申请号：EP14196567.3

申请日：2014-12-05

申请人： BASF SE

发明人： Ruettinger, Wolfgang ,  Wagloehner, Steffen ,  Loeffler, Daniel ,  Ahlf, Maraike

IPC分类号： C23C16/455 ,  H01L21/02 ,  C23C16/30 ,  C23C16/56 ,  H01L21/768

CPC分类号： H01L21/02203 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/7682 ,  H01L2221/1047

摘要： The present invention relates to the production of porous thin films, in particular by atomic layer deposition. The present invention relates to a process for producing porous films comprising the steps
(a) exposing a solid substrate to a vapor containing an organic compound (A), whereby a submonolayer of the organic compound (A) covalently bound to the surface of the solid substrate is formed,
(b) exposing the solid substrate to a vapor containing a compound of general formula (I) SiX 4 (I),
wherein X is hydrogen, a halogen, an alkoxy, an aryloxy, or an amine group,
(c) exposing the solid substrate to a vapor containing an organic compound (B) which has at least two functional groups out of which at least one can form a covalent bond with the surface-bound organic compound (A),
(d) performing the steps
(d1) exposing the solid substrate to a vapor containing water, and
(d2) exposing the solid substrate to a vapor containing a compound of general formula (I), (e) exposing the solid substrate to a vapor containing an organic compound (C) which has at least two functional groups out of which at least one can form a covalent bond to the surface-bound organic compound (B),

(f) removing organic parts from the film formed on the surface of the solid substrate.

摘要翻译： 本发明涉及多孔薄膜的生产，特别是原子层沉积。 本发明涉及一种制造多孔膜的方法，该方法包括以下步骤：（a）将固体基材暴露于含有有机化合物（A）的蒸气中，由此使有机化合物（A）的亚单分子层共价结合到固体表面 （b）将固体基质暴露于含有其中X是氢，卤素，烷氧基，芳氧基或胺基的通式（I）SiX4（I）的化合物的蒸气，（c） 将固体基材暴露于含有具有至少两个官能团的有机化合物（B）的蒸气，其中至少一个官能团可与表面结合的有机化合物（A）形成共价键，（d）执行步骤（ （d2）将固体基质暴露于含有通式（I）化合物的蒸气中，（e）将固体基质暴露于含有机化合物（C）的蒸气中， 其中至少有两个功能组 可以与表面结合的有机化合物（B）形成共价键，（f）从形成在固体基质表面上的膜中除去有机部分。

公开(公告)号：EP2434531A2

公开(公告)日：2012-03-28

申请号：EP11182813.3

申请日：2011-09-26

申请人： IMEC

发明人： Popovici, Mihaela Ioana ,  Swerts, Johan ,  Pawlak, Malgorzata ,  Tomida, Kazuyuki ,  Kim, Min-Soo ,  Kittl, Jorge ,  Van Elshocht, Sven

IPC分类号： H01L21/02 ,  C23C16/455 ,  H01L49/02

CPC分类号： H01L21/02356 ,  C23C16/409 ,  C23C16/45529 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02304 ,  H01L28/56

摘要： The present invention is related to a method for producing a stack of layers on a semiconductor substrate, the method comprising the steps of:
● providing a substrate,
● producing on said substrate a first conductive layer,
● by atomic layer deposition, producing a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO 2 layer, the other layers of the sub-stack being layers of a dielectric material having a composition suitable to form a cubic perovskite phase upon crystallization of said sub-stack of layers,

The substrate including said sub-stack of layers is subjected to a heat treatment to thereby obtain a crystallized dielectric layer. A second conductive layer is produced before or after the heat treatment so as to obtain a metal-insulator-metal capacitor with improved characteristics as a consequence of the Ti02 layer being present in the sub-stack. Notably, in a MIM capacitor according to the invention, the k-value of the dielectric layer is between 50 and 100 and the EOT of the MIM capacitor is between 0.35nm and 0.55nm.

摘要翻译： 本发明涉及一种用于在半导体衬底上制备层叠层的方法，所述方法包括以下步骤： - 提供衬底， - 在所述衬底上产生第一导电层， - 通过原子层沉积， 在所述导电层上产生一层子层，所述子堆叠的至少一层是TiO 2层，所述子堆叠的其它层是具有适于形成 在所述子层叠层结晶时立方体的钙钛矿相进行热处理，从而得到包含所述层叠层的基板，从而得到结晶化的介电层。 在热处理之前或之后产生第二导电层，从而获得由于TiO 2层存在于子堆中而具有改进特性的金属 - 绝缘体 - 金属电容器。 值得注意的是，在根据本发明的MIM电容器中，电介质层的k值在50和100之间，MIM电容器的EOT在0.35nm和0.55nm之间。

公开(公告)号：EP2011145A2

公开(公告)日：2009-01-07

申请号：EP07759461.2

申请日：2007-03-27

申请人： Tokyo Electron Limited (TEL)

发明人： CLARK, Robert D.

IPC分类号： H01L21/314 ,  C23C16/448 ,  C23C16/455 ,  C23C16/30 ,  C23C28/02

CPC分类号： H01L21/02192 ,  C23C16/308 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/5096 ,  H01L21/02178 ,  H01L21/02194 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/3145 ,  H01L21/318

摘要： A method is provided for depositing a gate dielectric that includes at least two rare earth metal elements in the form of an oxynitride or an aluminum oxynitride. The method includes disposing a substrate in a process chamber and exposing the substrate to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate is exposed to a gas pulse of an oxygen-containing gas, nitrogen-containing gas or an oxygen- and nitrogen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element. The sequential exposing steps may be repeated to deposit a mixed rare earth oxynitride or aluminum oxynitride layer with a desired thickness. Purge or evacuation steps may also be performed after each gas pulse.

公开(公告)号：EP1552547A4

公开(公告)日：2008-09-24

申请号：EP03765671

申请日：2003-07-18

申请人： AVIZA TECH INC

发明人： YOSHIHIDE SENZAKI

IPC分类号： H01L27/04 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/20

CPC分类号： H01L21/28562 ,  C23C16/308 ,  C23C16/34 ,  C23C16/405 ,  C23C16/45529 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40 ,  H01L28/60

摘要： The invention describes an in-situ method of fabricating a metal insulator metal (MIM) capacitor and products formed by the same. The method utilizes atomic layer deposition (ALD) or metal-organic chemical vapor deposition (MOCVD). In the method, a metal precursor is sequentially reacted with a nitrogen source, oxidant, and then a nitrogen source again. Reaction with the nitrogen source generates the outermost conductive metal nitride (MN) layers (121). Reaction with the oxidant generates an inner dielectric metal oxide (MOx) layer (110). Alternatively, or in addition, the metal precursor can be reacted with a mixture of oxidant and nitrogen source to generate inner dielectric layer(s) (231, 232, 310) of metal oxynitride (MOxNy). Because the same metal is used throughout the capacitor, the layers in the MIM capacitor exhibits excellent compatibility and stability.