公开(公告)号：EP0688888A3

公开(公告)日：1998-02-04

申请号：EP95304139.9

申请日：1995-06-15

申请人： APPLIED MATERIALS, INC.

发明人： Lei, Lawrence Chung-lai ,  Leung, Cissy S. ,  Englhardt, Eric A. ,  Sinha, Ashok K.

IPC分类号： C23C16/44 ,  C23C16/52 ,  H01L21/00 ,  C30B25/12

CPC分类号： C23C16/45521 ,  C23C16/4585 ,  C30B25/14 ,  H01L21/6838

摘要： The disclosure relates to a substrate processing apparatus (10) for processing a substrate (20) having a peripheral edge, an upper surface for processing and a lower surface lying on a support (16). The apparatus includes a processing chamber (14) which houses the substrate support, in the form of a heater pedestal including a substrate receiving surface (22) for receiving the lower surface of the substrate. A circumscribing shadow ring (24) is located around the pedestal to cover peripheral edge portion of the substrate. The shadow ring also defines a cavity (70) between itself and the pedestal, at the peripheral edge of the substrate. In operation, the chamber receives processing gas at a first pressure and purge gas is introduced into the cavity, between the ring and the pedestal, at a second pressure which is greater than the first pressure. Fluid conduits (50) are provided to enhance the flow of the purge gas away from the peripheral edge of the substrate.

摘要翻译： 本发明涉及一种用于处理具有外围边缘，用于处理的上表面和位于支撑件（16）上的下表面的基板（20）的基板处理设备（10）。 该设备包括以加热器基座的形式容纳基板支撑件的处理腔室（14），该加热器基座包括用于接收基板的下表面的基板接收表面（22）。 外接阴影环（24）位于基座周围以覆盖基板的外围边缘部分。 遮蔽环还在衬底的外围边缘处限定其本身与底座之间的空腔（70）。 在操作中，腔室以第一压力接收处理气体，并且在大于第一压力的第二压力下将净化气体引入腔室中的环和基座之间。 提供流体管道（50）以增强吹扫气体远离衬底的外围边缘的流动。

公开(公告)号：EP0688888B1

公开(公告)日：2002-09-18

申请号：EP95304139.9

申请日：1995-06-15

申请人： APPLIED MATERIALS, INC.

发明人： Lei, Lawrence Chung-lai ,  Leung, Cissy S. ,  Englhardt, Eric A. ,  Sinha, Ashok K.

IPC分类号： C23C16/44 ,  C23C16/52 ,  H01L21/00 ,  C30B25/12

CPC分类号： C23C16/45521 ,  C23C16/4585 ,  C30B25/14 ,  H01L21/6838

公开(公告)号：EP1132495A1

公开(公告)日：2001-09-12

申请号：EP00127477.8

申请日：1995-07-06

申请人： Applied Materials, Inc.

发明人： Leung, Cissy S. ,  Somekh, Sasson ,  Chung-Lai Lei, Lawrence

IPC分类号： C23C16/44 ,  C23C16/14 ,  H01L21/00 ,  B08B7/00

CPC分类号： H01L21/67028 ,  C23C16/4405 ,  H01J37/32862 ,  H01J2237/022 ,  Y10S438/905

摘要： A process for removing deposits, formed while processing semiconductor wafers, from within a space at least partially delimited by an area of a surface (12) which is covered by said semiconductor wafer during processing and which is subject to attack from a plasma, and wherein the area of a surface (12) which is covered by said semiconductor wafer is the entire upper surface (12) of a heater plate (14), said process comprising the steps of:

(a) placing on the heater plate a cover (10) covering said heater plate (14) or extending beyond the edges of the heater plate (14) and comprising a material which is inert to said plasma, and
(b) removing said deposits by a plasma process.

摘要翻译： 一种在处理半导体晶片期间形成的沉积物的过程，所述沉积物至少部分地由在处理期间由所述半导体晶片覆盖并且受到等离子体侵蚀的表面（12）的区域界定，并且其中 由所述半导体晶片覆盖的表面（12）的面积是加热板（14）的整个上表面（12），所述方法包括以下步骤：（a）将加盖板（10） ）覆盖所述加热板（14）或延伸超出加热板（14）的边缘并且包括对所述等离子体是惰性的材料，和（b）通过等离子体工艺去除所述沉积物。

公开(公告)号：EP0892083B1

公开(公告)日：2003-03-19

申请号：EP98107962.7

申请日：1998-04-30

申请人： Applied Materials, Inc.

发明人： Qiao, Jianmin ,  Chan, Chiu ,  Chan, Diana ,  Leung, Cissy S. ,  Sahin, Turgut

IPC分类号： C23C16/44 ,  C23C16/40 ,  H01L21/00

CPC分类号： C23C16/402 ,  C23C16/4404 ,  H01L21/314

公开(公告)号：EP0892083A1

公开(公告)日：1999-01-20

申请号：EP98107962.7

申请日：1998-04-30

申请人： Applied Materials, Inc.

发明人： Qiao, Jianmin ,  Chan, Chiu ,  Chan, Diana ,  Leung, Cissy S. ,  Sahin, Turgut

IPC分类号： C23C16/44 ,  C23C16/40 ,  H01L21/00

CPC分类号： C23C16/402 ,  C23C16/4404 ,  H01L21/314

摘要： An improved method of reducing the level of contaminants (e.g., fluorine) absorbed in films deposited within a substrate processing chamber. A seasoning layer is deposited within the substrate processing chamber to cover contaminants that may be absorbed within walls or insulation areas of the chamber interior. The deposited seasoning layer adheres better to ceramic portions of the interior of the substrate processing chamber than prior art seasoning layers and is thus less likely to chip- or peel-off during the subsequent deposition of films over substrates disposed in the chamber. The seasoning layer is formed by forming a plasma of a gas that includes O 2 and SiH 4 in a flow ratio of between 1.4:1 to 2.4:1 O 2 to SiH 4 .

摘要翻译： 减少污染物在处理室中的基板内沉积的膜所吸收的电平（例如，氟）的改进方法。 调料层在基板处理室中沉积，以覆盖污染物也可以壁或腔室内部的绝缘区域内被吸收。 所沉积的调味料层更加牢固粘合的基片处理室比现有技术的调味品层的内部的陶瓷部，并且因此不太可能剥离期间薄膜的在腔室中设置在衬底上方后续沉积到或芯片。 调味料层通过形成气体的等离子体，并FORMED包括在1.4之间的流量比O2和的SiH 4：2.4至1：1到O2的SiH 4。

公开(公告)号：EP0691420B1

公开(公告)日：2001-10-17

申请号：EP95110578.2

申请日：1995-07-06

申请人： APPLIED MATERIALS, INC.

发明人： Leung, Cissy S. ,  Somekh, Sasson ,  Lei, Lawrence Chung-Lai

IPC分类号： C23C16/44 ,  C23C16/14 ,  H01L21/00 ,  B08B7/00

CPC分类号： H01L21/67028 ,  C23C16/4405 ,  H01J37/32862 ,  H01J2237/022 ,  Y10S438/905

公开(公告)号：EP0691420A1

公开(公告)日：1996-01-10

申请号：EP95110578.2

申请日：1995-07-06

申请人： APPLIED MATERIALS, INC.

发明人： Leung, Cissy S. ,  Somekh, Sasson ,  Lei, Lawrence Chung-Lai

IPC分类号： C23C16/44 ,  C23C16/14 ,  H01L21/00 ,  B08B7/00

CPC分类号： H01L21/67028 ,  C23C16/4405 ,  H01J37/32862 ,  H01J2237/022 ,  Y10S438/905

摘要： A process for removing deposits from within a space at least partially delimited by a surface (12) which is subject to attack from a plasma includes the steps of placing on the surface (12) a cover (10) comprising a material which is inert to the plasma, and then removing the deposits. The space could preferably be a vacuum deposition chamber (16) for processing semiconductor wafers. Advantageously, the surface (12) is at least a portion of the heating surface of a heater plate (14). The cover (10) could be formed as a covering wafer.

摘要翻译： 用于从至少部分地由受等离子体侵蚀的表面（12）限定的空间内去除沉积物的方法包括以下步骤：在表面（12）上放置一个盖（10），该盖子（10）包括对 等离子体，然后除去沉积物。 该空间可以优选地是用于处理半导体晶片的真空沉积室（16）。 有利地，表面（12）是加热板（14）的加热表面的至少一部分。 盖（10）可以形成为覆盖晶片。 $$

公开(公告)号：EP0688888A2

公开(公告)日：1995-12-27

申请号：EP95304139.9

申请日：1995-06-15

申请人： APPLIED MATERIALS, INC.

发明人： Lei, Lawrence Chung-lai ,  Leung, Cissy S. ,  Englhardt, Eric A. ,  Sinha, Ashok K.

IPC分类号： C23C16/44 ,  C23C16/52 ,  H01L21/00 ,  C30B25/12

CPC分类号： C23C16/45521 ,  C23C16/4585 ,  C30B25/14 ,  H01L21/6838

摘要： The disclosure relates to a substrate processing apparatus (10) for processing a substrate (20) having a peripheral edge, an upper surface for processing and a lower surface lying on a support (16). The apparatus includes a processing chamber (14) which houses the substrate support, in the form of a heater pedestal including a substrate receiving surface (22) for receiving the lower surface of the substrate. A circumscribing shadow ring (24) is located around the pedestal to cover peripheral edge portion of the substrate. The shadow ring also defines a cavity (70) between itself and the pedestal, at the peripheral edge of the substrate. In operation, the chamber receives processing gas at a first pressure and purge gas is introduced into the cavity, between the ring and the pedestal, at a second pressure which is greater than the first pressure. Fluid conduits (50) are provided to enhance the flow of the purge gas away from the peripheral edge of the substrate.

摘要翻译： 本公开涉及一种用于处理具有周边边缘的基板（20），用于加工的上表面和位于支撑件（16）上的下表面）的基板处理装置（10）。 该装置包括处理室（14），该处理室以加热器底座的形式容纳衬底支撑件，该加热器基座包括用于接收衬底的下表面的衬底接收表面（22）。 外围的阴影环（24）位于基座周围以覆盖基板的周缘部分。 阴影环还在基板的周缘处在其与基座之间限定一个空腔（70）。 在操作中，腔室以第一压力接收处理气体，并且吹扫气体以大于第一压力的第二压力被引入腔室中的空腔中。 提供流体导管（50）以增强净化气体远离基板周边的流动。