公开(公告)号：EP2539920A1

公开(公告)日：2013-01-02

申请号：EP10795886.0

申请日：2010-12-14

申请人： Veeco Instruments Inc.

发明人： GURARY, Alex ,  BELOUSOV, Mikhail ,  BOGUSLAVSKIY, Vadim ,  MITROVIC, Bojan

IPC分类号： H01L21/00 ,  H01L21/687

CPC分类号： H01L22/26 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67109 ,  H01L21/68785 ,  H01L21/68792

摘要： Wafer treatment process and apparatus is provided with a wafer carrier (80) arranged to hold wafers (124) and to inject a fill gas into gaps (130) between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers.

公开(公告)号：EP1466033A1

公开(公告)日：2004-10-13

申请号：EP03729688.6

申请日：2003-01-15

申请人： Applied Materials, Inc.

发明人： JIN, Xiaoliang ,  WANG, Shulin ,  LUO, Lee ,  HO, Henry ,  CHEN, Steven, A.

IPC分类号： C23C16/455 ,  C23C16/46 ,  H01L21/00 ,  C23C16/44

CPC分类号： C23C16/45521 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45591 ,  C23C16/46 ,  H01L21/67109

摘要： An apparatus that includes a pumping plate (812) having a skirt (822), where the skirt contains a number of holes (828) and a water access slot, and where the number of holes are sized and positioned to provide uniform heating of a susceptor (806).

摘要翻译： 一种设备，其包括具有裙部（822）的汲取板（812），其中裙部包含多个孔（828）和通水槽，并且其中孔的数量被设定尺寸并定位成提供 感受器（806）。

公开(公告)号：EP1216106A1

公开(公告)日：2002-06-26

申请号：EP00963326.4

申请日：2000-09-08

申请人： ASM America, Inc.

发明人： RAAIJMAKERS, Ivo

IPC分类号： B05C11/00 ,  H05H1/10

CPC分类号： C23C16/45544 ,  C23C16/452 ,  C23C16/45521 ,  C23C16/45536 ,  C23C16/45542 ,  C30B25/14 ,  C30B29/38 ,  H01J37/3244 ,  Y10T117/10

摘要： An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas (C, D) delivery of sequential pulses of reactants (A, B) to the substrate surfaces. (5) At least one of the reactants (A, B) comprises excited species, e.g., radicals. In a specific embodiment, the apparatus of this invention provides sequential repeated pulses of reactants in a flow of carrier gas (4, 13) for reaction at a substrate surfaces. The reactant pulses are delivered with sufficient intervening delay times to minimize undesirable reaction between reactants (A, B) in adjacent pulses in the gas phase or undesired uncontrolled reactions on the substrate surface (5).

公开(公告)号：EP1080485A1

公开(公告)日：2001-03-07

申请号：EP99916444.5

申请日：1999-04-06

申请人： Applied Materials, Inc.

发明人： ZHAO, Jun ,  SAJOTO, Talex ,  SELYUTIN, Leonid

IPC分类号： H01L21/00 ,  C23C16/46

CPC分类号： C23C16/45521 ,  C23C16/14 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/52 ,  H01L21/67109

摘要： The present invention provides a simplified heater design that is scaleable for equipment processing different diameter substrates and that can efficiently and economically process substrates to meet stringent film requirements such as film uniformity for fabricating high integration devices. The present invention is particularly useful for economically and efficiently producing integrated devices using increasingly larger diameter substrates, such as 12-inch (or 300-mm) diameter and even larger substrates. According to one embodiment, the present invention provides a heater assembly for use in a substrate processing apparatus. The heater assembly includes a metal pedestal including a surface for supporting a substrate, and a resistive heating element disposed in the metal pedestal. The heater assembly also includes a purge gas channel system disposed in the metal pedestal. The purge gas channel system includes a central purge gas inlet located substantially at a center of the metal pedestal. The central purge gas inlet is for providing a purge gas. The purge gas channel system also includes multiple radial purge gas channels radiating from the central purge gas inlet out toward a perimeter of the metal pedestal, and an annular purge gas channel formed in the metal pedestal at the perimeter. The purge gas channels form a substantially symetric pattern, and each of the purge gas channels are substantially the same length. In a specific embodiment, the assembly includes an annular purge gas channel coupled to the surface via multiple holes near the perimeter to provide a purge guide ring integral to the metal pedestal. Other embodiments of the present invention are also provided.

公开(公告)号：EP0918887A1

公开(公告)日：1999-06-02

申请号：EP98923491.0

申请日：1998-05-12

申请人： APPLIED MATERIALS, INC.

发明人： BIERMAN, Benjamin ,  WILLIAMS, Meredith, J. ,  BALLANCE, David, S. ,  HAAS, Brian ,  DEATON, Paul ,  TIETZ, James, V.

IPC分类号： H01L21 ,  C23C16 ,  C30B25

CPC分类号： C23C16/45521 ,  C23C16/4401 ,  C23C16/4584 ,  C23C16/481 ,  C30B25/12 ,  C30B25/14 ,  H01L21/68735 ,  H01L21/68785 ,  H01L21/68792

摘要： An apparatus to isolate a rotating frame in a processing chamber, comprising: a support cylinder rotatably extending from the rotating frame; and a co-rotating edge ring extension extending from the support cylinder to at least one of substantially thermally, optically and mechanically isolate the region above the co-rotating edge ring extension from the region below the co-rotating edge ring extension.

公开(公告)号：EP0646285B1

公开(公告)日：1998-11-04

申请号：EP93915332.6

申请日：1993-06-11

申请人： Tokyo Electron Limited

发明人： FOSTER, Robert, F. ,  REBENNE, Helen, E. ,  LEBLANC, Rene, E. ,  WHITE, Carl, L. ,  ARORA, Rikhit

IPC分类号： H01L21/205 ,  H01L21/365

CPC分类号： C23C16/45565 ,  C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45512 ,  C23C16/45521 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/466 ,  C23C16/54 ,  H01L21/67109

摘要： A semiconductor wafer processing apparatus (10) is provided with a susceptor (40) for supporting a wafer (44) for CVD of films such as blanket or selective deposition of tungsten or titanium nitride, and degassing and annealing processes. Preferably, a downwardly facing showerhead (35) directs a gas mixture from a cooled mixing chamber (30) onto an upwardly facing wafer (44) on the susceptor (40). Smooth interior reactor surfaces include baffles (90, 101, 102) and a susceptor lip (162) and wall (130) shaped to minimize turbulence. Inert gases flow to minimize turbulence by filling gaps in susceptor structure, prevent contamination of moving parts, conduct heat between the susceptor and the wafer, and vacuum clamp the wafer to the susceptor. A susceptor lip (162) surrounds the wafer (44) and is removable for cleaning, to accommodate different size wafers, and allows change of lip materials for different processes, such as, one which will resist deposits during selective CVD, or one which scavenges unspent gases in blanket CVD. The lip (162) smooths gas flow, reduces thermal gradients at the wafer edge. The susceptor design reduces heat flow from the susceptor to other reactor parts by conduction or radiation.

公开(公告)号：EP0619381B1

公开(公告)日：1998-07-01

申请号：EP94105139.3

申请日：1994-03-31

申请人： APPLIED MATERIALS, INC.

发明人： Lei, Lawrence Chung-Lai ,  Perlov, Ilya ,  Littau, Karl Anthony ,  Morrison, Alan Ferris ,  Chang, Mei ,  Sinha, Ashok K.

IPC分类号： C23C16/00 ,  C23C16/44 ,  C23C16/46 ,  H01L21/00

CPC分类号： C23C16/45519 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/68 ,  H01L21/68721 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785 ,  H01L21/68792 ,  Y10S438/935

公开(公告)号：EP0746874A1

公开(公告)日：1996-12-11

申请号：EP95911831.0

申请日：1995-02-21

申请人： APPLIED MATERIALS, INC.

发明人： SINHA, Ashok ,  CHANG, Mei ,  PERLOV, Ilya ,  LITTAU, Karl ,  MORRISON, Alan ,  LEI, Lawrence, Chung-Lai

IPC分类号： C23C16 ,  H01L21

CPC分类号： C23C16/45521 ,  C23C16/4583 ,  C23C16/4585

摘要： A chemical vapor deposition chamber (10) includes a substrate support member (18) positionable therein to receive a substrate (24) thereon for processing. The support member (18) is positioned in the chamber (10) by a moveable stem (20) which extends through a sealed aperture (100) in the base of the chamber (10). To reduce heat transfer from the stem (20) outwardly of the chamber, the stem (20) includes a heat choke portion (44). To ensure that the support member (18) does not droop or sag under the high temperature conditions present in the chamber (10), a secondary plate (91) having high thermal resistance is maintained against the non-substrate receiving side of the support member (18). The use of the secondary plate (91) enables the use of highly thermally conductive, but low thermal strength, materials for the support member (18). The chamber (10) also includes a detection system for detecting the presence of mis-aligned, cracked or warped substrates (24) in the chamber (10). The support member (18) preferably incudes a plurality of vacuum grooves (77, 78) therein, which are maintained at a vacuum pressure to firmly adhere the substrate (24) to the support member (18) during processing. If the vacuum is not maintainable in the grooves (77, 78), this is indicative of a cracked, mis-aligned or warped substrate (77, 78). If this condition occurs, a controller shuts down the chamber and indicates the presence of a cracked, warped or mis-aligned substrate (24). The chamber also provides for edge protection of the substrates (24) as they are processed in the chamber (10). This is provided by creating a purge gas channel (220) about the perimeter of the substrate (24) and aligning the edge of the substrate (24) such that a purge gas gap is provided about the perimeter of the substrate edge.

摘要翻译： 化学气相沉积室（10）包括可定位在其中以在其上接收基板（24）以进行处理的基板支撑构件（18）。 支撑构件（18）通过延伸穿过腔室（10）的基部中的密封孔（100）的可动杆（20）定位在腔室（10）中。 为了减少从室（20）向室外传递的热量，杆（20）包括热扼流部分（44）。 为了确保支撑构件18在腔室10中存在的高温条件下不下垂或下垂，具有高热阻的第二板91维持在支撑构件的非基板接收侧上 （18）。 使用第二板（91）能够为支撑构件（18）使用高导热性但低热强度的材料。 腔室（10）还包括检测系统，用于检测腔室（10）中存在错位，裂纹或翘曲的基板（24）。 支撑部件（18）优选地包括多个真空槽（77,78），其在处理期间保持在真空压力以牢固地将基板（24）粘附到支撑部件（18）。 如果真空不能维持在凹槽（77,78）中，则这表示裂纹，错位或扭曲的基材（77,78）。 如果发生这种情况，控制器会关闭腔室并指示存在裂纹，翘曲或错位的基材（24）。 当腔室（10）中被处理时，腔室还为基板（24）提供边缘保护。 这通过在衬底（24）的周边周围形成吹扫气体通道（220）并且对齐衬底（24）的边缘来提供，从而围绕衬底边缘的周边提供吹扫气体间隙。

公开(公告)号：EP0708477A1

公开(公告)日：1996-04-24

申请号：EP95116509.1

申请日：1995-10-19

申请人： APPLIED MATERIALS, INC.

发明人： Lei, Lawrence Chung-Lai ,  Leung S., Cissy

IPC分类号： H01L21/00 ,  C23C16/44

CPC分类号： C23C16/45521 ,  C23C16/45519 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/4585 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68792 ,  Y10S438/935

摘要： A substrate processing apparatus comprising a housing defining a processing chamber for receiving a substrate (24) therein. Inside the chamber a substrate supporting susceptor (18), including an upper substrate receiving portion is located. The receiving portion defines a walled pocket (280) dimensioned to receive the substrate (24) therein. When the substrate (24) is so received the walls of the pocket (280) define an annulus (284) with the outer edge (27) of the substrate (24). Typically the pocket walls are perpendicular to a primary plane of the substrate (24) and are at least as high, and preferably twice as high, as the substrate (24) is thick. At the outer, circumferential edge of the pocket (280) a gas manifold (218) is formed. The manifold (218) is arranged so that, during processing, a gas can be projected toward the edge (27) of a substrate (24) received in the pocket (280). This gas moves upwards between the annulus (284) defined between the wall of the pocket (280) and the outer edge (27) of the substrate (24), thereby preventing processing gas from contacting the edge portion of the substrate (24).

摘要翻译： 一种基板处理装置，包括限定用于在其中接收基板（24）的处理室的壳体。 在腔室内设有包括上基板接收部分的基板支撑基座（18）。 接收部分限定了一个有壁的口袋（280），其尺寸适于在其中容纳衬底（24）。 当衬底（24）被如此容纳时，袋（280）的壁与衬底（24）的外边缘（27）限定环（284）。 通常，袋壁垂直于衬底（24）的初级平面，并且至少与衬底（24）较厚一样高，优选两倍高。 在口袋（280）的外部圆周边缘处形成气体歧管（218）。 歧管（218）布置成使得在处理期间，气体可以朝向容纳在口袋（280）中的基底（24）的边缘（27）突出。 这种气体在限定在袋（280）的壁和衬底（24）的外边缘（27）之间的环（284）之间向上移动，从而防止处理气体接触衬底（24）的边缘部分。

公开(公告)号：EP0688888A2

公开(公告)日：1995-12-27

申请号：EP95304139.9

申请日：1995-06-15

申请人： APPLIED MATERIALS, INC.

发明人： Lei, Lawrence Chung-lai ,  Leung, Cissy S. ,  Englhardt, Eric A. ,  Sinha, Ashok K.

IPC分类号： C23C16/44 ,  C23C16/52 ,  H01L21/00 ,  C30B25/12

CPC分类号： C23C16/45521 ,  C23C16/4585 ,  C30B25/14 ,  H01L21/6838

摘要： The disclosure relates to a substrate processing apparatus (10) for processing a substrate (20) having a peripheral edge, an upper surface for processing and a lower surface lying on a support (16). The apparatus includes a processing chamber (14) which houses the substrate support, in the form of a heater pedestal including a substrate receiving surface (22) for receiving the lower surface of the substrate. A circumscribing shadow ring (24) is located around the pedestal to cover peripheral edge portion of the substrate. The shadow ring also defines a cavity (70) between itself and the pedestal, at the peripheral edge of the substrate. In operation, the chamber receives processing gas at a first pressure and purge gas is introduced into the cavity, between the ring and the pedestal, at a second pressure which is greater than the first pressure. Fluid conduits (50) are provided to enhance the flow of the purge gas away from the peripheral edge of the substrate.

摘要翻译： 本公开涉及一种用于处理具有周边边缘的基板（20），用于加工的上表面和位于支撑件（16）上的下表面）的基板处理装置（10）。 该装置包括处理室（14），该处理室以加热器底座的形式容纳衬底支撑件，该加热器基座包括用于接收衬底的下表面的衬底接收表面（22）。 外围的阴影环（24）位于基座周围以覆盖基板的周缘部分。 阴影环还在基板的周缘处在其与基座之间限定一个空腔（70）。 在操作中，腔室以第一压力接收处理气体，并且吹扫气体以大于第一压力的第二压力被引入腔室中的空腔中。 提供流体导管（50）以增强净化气体远离基板周边的流动。