摘要:
A chemical mechanical polishing apparatus includes two optical systems which are used serially to determine polishing endpoints. The first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. The second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.
摘要:
An apparatus, as well as a method, brings a surface of a substrate into contact with a polishing pad that has a window, causes relative motion between the substrate and the polishing pad, and directs a light beam through the window so that the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate. An extreme intensity measurement is derived from a plurality of intensity measurements made as the light beam moves across the substrate. The beam sweeps across the substrate a plurality of times to generate a plurality of extreme intensity measurements, and a polishing endpoint is detected based on the plurality of extreme intensity measurements.
摘要:
The disclosure relates to an optical monitoring system (40) for a two-step polishing process for polishing substrates which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus (20) may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer (16) of the substrate, and polishing may halt when all of the reflectance traces indicate that oxide layer (14) has been completely exposed.
摘要:
The disclosure relates to an apparatus (20) and method, for polishing a surface of a substrate using a polishing pad (30). A light beam is directed by an optical endpoint detection system (40), to impinge the surface of the substrate (10). A signal from the optical endpoint detection system is monitored, and if a first endpoint criterion is not detected within a first time window, polishing is stopped at a default polishing time. If the first endpoint criterion is detected within the first time window, the signal is monitored for the second endpoint criterion, and polishing stops if the second endpoint criterion is detected.
摘要:
The disclosure relates to an apparatus (20) and method, for polishing a surface of a substrate using a polishing pad (30). A light beam is directed by an optical endpoint detection system (40), to impinge the surface of the substrate (10). A signal from the optical endpoint detection system is monitored, and if a first endpoint criterion is not detected within a first time window, polishing is stopped at a default polishing time. If the first endpoint criterion is detected within the first time window, the signal is monitored for the second endpoint criterion, and polishing stops if the second endpoint criterion is detected.
摘要:
The disclosure relates to an optical monitoring system (40) for a two-step polishing process for polishing substrates which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus (20) may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer (16) of the substrate, and polishing may halt when all of the reflectance traces indicate that oxide layer (14) has been completely exposed.
摘要:
An apparatus, as well as a method, brings a surface of a substrate into contact with a polishing pad that has a window, causes relative motion between the substrate and the polishing pad, and directs a light beam through the window so that the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate. An extreme intensity measurement is derived from a plurality of intensity measurements made as the light beam moves across the substrate. The beam sweeps across the substrate a plurality of times to generate a plurality of extreme intensity measurements, and a polishing endpoint is detected based on the plurality of extreme intensity measurements.
摘要:
A chemical mechanical polishing apparatus includes two optical systems which are used serially to determine polishing endpoints. The first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. The second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.