摘要:
An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate and a mounting surface. A plurality of perforations may be formed in the polishing article for flow of material therethrough. In another aspect, a polishing article for polishing a substrate includes a body having a polishing surface and a conductive element disposed therein. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. The polishing surface may have one or more pockets formed therein. The conductive element may be disposed in each of the polishing pockets.
摘要:
A chemical mechanical polishing apparatus has a polishing pad (30), a carrier (70) to hold a substrate (10) against a first side of the polishing surface, and a motor coupled to at least one of the polishing pad (30) and carrier head (70) for generating relative motion therebetween. An eddy current monitoring system (40) is positioned to generate an alternating magnetic field in proximity to the substrate (10), an optical monitoring system (140) generates a light beam and detects reflections of the light beam from the substrate (10), and a controller (90) receives signals from the eddy current monitoring system (40) and the optical monitoring system (140).
摘要:
The disclosure relates to an optical monitoring system (40) for a two-step polishing process for polishing substrates which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus (20) may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer (16) of the substrate, and polishing may halt when all of the reflectance traces indicate that oxide layer (14) has been completely exposed.
摘要:
Apparatus and methods of polishing substrates are disclosed. A retaining ring (22) for a polishing apparatus includes an inner surface exposed to contact a peripheral edge of a substrate to be polished against a polishing surface, a bottom surface (32) exposed to contact the polishing surface while the substrate is being polished, and a wear marker (33) indicative of a preselected amount of wear of the bottom surface (32). The inner surface, bottom surface (32) and wear marker (38) may form part of a retaining ring (22) used in chemical mechanical polishing operations. In one method, one or more substrates may be polished against a polishing surface using the retaining ring (22), and at least a portion of the retainer may be replaced when the bottom surface (32) has been worn away by the preselected amount indicated by the wear marker (38). In another method, one or more substrate may be polished against a polishing surface with a substrate carrier that includes a substrate retaining ring with a wear marker indicative of a preselected amount of wear of the retaining ring, and a warning signal may be generated upon detection of the wear marker.
摘要:
The disclosure relates to an apparatus (20) and method, for polishing a surface of a substrate using a polishing pad (30). A light beam is directed by an optical endpoint detection system (40), to impinge the surface of the substrate (10). A signal from the optical endpoint detection system is monitored, and if a first endpoint criterion is not detected within a first time window, polishing is stopped at a default polishing time. If the first endpoint criterion is detected within the first time window, the signal is monitored for the second endpoint criterion, and polishing stops if the second endpoint criterion is detected.
摘要:
A semiconductor substrate processing system for polishing a substrate that generally includes a platen (10,12) and a web (1104) of polishing material disposed thereon. Embodiments of the system include a disposable cartridge (1002) for housing the web of polishing material, a shield member (256) disposed proximate the web for preventing contamination of the unused portion of the web, a fluid delivery system (184,186) for fixing and freeing the web from the platen, apparatus (1402) for controlling the lateral movement of the web, and an apparatus (304,306) for providing more linear feet of polishing material per height of a roll.
摘要:
A semiconductor substrate processing system for polishing a substrate includes a platen (23) and a web (252) of polishing material disposed thereon. The system include a first fluid delivery arm (154) and a second fluid delivery arm (156) respectively adapted to dispose a first and a second polishing fluid on the polishing material. A sensor (226) produces a signal indicative of the temperature of the polishing process. An analyzer for determining a polishing metric from a polishing fluid disposed on the polishing material. A method for processing comprises the steps of sensing an indicia of a polishing metric, and regulating a rate of material removal. The step of regulating the rate of material removal may comprise steps such as changing the temperature of a fluid circulated and changing the chemistry of the polishing fluids. The step of sensing the indicia may include analyzing the effluent and sensing temperature.
摘要:
An electrostatic chuck 20 of the present invention is capable of maintaining substantially uniform temperatures across a substrate 30 . The chuck 20 comprises an electrostatic member 35 that includes (i) an insulator 45 covering an electrode 40 , (ii) a substantially planar and conformal contact surface 50 capable of conforming to a substrate 30 , and (iii) conduits 105 terminating at the contact surface 50 for providing heat transfer fluid to the contact surface 50 . Application of a voltage to the electrode 40 of the electrostatic member 35 electrostatically holds the substrate 30 on the conformal contact surface 50 to define an outer periphery 110 having (1) leaking portions 115 where heat transfer fluid leaks out, and (2) sealed portions 130 where heat transfer fluid substantially does not leak out. A fluid flow regulator 135 is provided for flowing heat transfer fluid at different flow rates through the conduits 105 in the electrostatic member 35 to provide (i) first flow rates of heat transfer fluid through the conduits 105 adjacent to the sealed portions 130 of the outer periphery 110 of the electrostatic member 35 , and (ii) second flow rates of heat transfer fluid through the conduits 105 adjacent to the leaking portions 115 , the second flow rates being higher than the first flow rates, to maintain substantially uniform temperatures across the substrate 30 held on the chuck 20 .